公开(公告)号：WO1997016886A2

公开(公告)日：1997-05-09

申请号：PCT/US1996014339

申请日：1996-09-05

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  LIN, Jonathan ,  BARSAN, Radu

IPC: H03K00/00

CPC classification number: G11C16/045 ,  G11C16/0441 ,  G11C2216/10 ,  H01L27/115

Abstract: An improved control gate-addressed CMOS memory cell is provided which allows for programming and erasing by tunneling through the gate oxides of the PMOS and NMOS transistors. The CMOS memory cell (400) includes a PMOS transistor (402), an NMOS transistor (403), and an NMOS pass transistor (405). A capacitor (430) has a first terminal coupled to a common floating gate (416) of the PMOS and NMOS transistors and has a second terminal coupled to a control gate node.

Abstract translation: 提供了一种改进的控制栅极寻址CMOS存储单元，其允许通过穿过PMOS和NMOS晶体管的栅极氧化物的隧道编程和擦除。 CMOS存储单元（400）包括PMOS晶体管（402），NMOS晶体管（403）和NMOS传输晶体管（405）。 电容器（430）具有耦合到PMOS和NMOS晶体管的公共浮动栅极（416）的第一端子，并且具有耦合到控制栅极节点的第二端子。