公开(公告)号：WO1997029544A1

公开(公告)日：1997-08-14

申请号：PCT/US1996015029

申请日：1996-09-19

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  MALEY, Reading

IPC: H03K19/003

CPC classification number: H03K19/00315

Abstract: An oxide protection circuit prevents failure of the MOS transistors in a digital device. A voltage difference at a gate oxide of a digital device does not exceed a breakdown voltage magnitude. The gate oxide protection circuit includes a plurality of transistors which turn OFF or ON when a node reaches a predetermined voltage of Vrefp+Vt or Vrefn-Vt, where Vrefp and Vrefn are references applied at a gate of a PMOS or an NMOS transistor, and Vt equals a threshold voltage of the MOS transistor.

Abstract translation: 氧化物保护电路防止数字装置中的MOS晶体管的故障。 数字装置的栅极氧化物处的电压差不超过击穿电压的大小。 栅极氧化物保护电路包括当节点达到Vrefp + Vt或Vrefn-Vt的预定电压时关断或导通的多个晶体管，其中Vrefp和Vrefn是在PMOS或NMOS晶体管的栅极处施加的基准，以及 Vt等于MOS晶体管的阈值电压。

公开(公告)号：EP0862815A1

公开(公告)日：1998-09-09

申请号：EP96931648.0

申请日：1996-09-19

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： MALEY, Reading

IPC: H03K19

CPC classification number: H03K19/00315

Abstract: An oxide protection circuit prevents failure of the MOS transistors in a digital device. A voltage difference at a gate oxide of a digital device does not exceed a breakdown voltage magnitude. The gate oxide protection circuit includes a plurality of transistors which turn OFF or ON when a node reaches a predetermined voltage of Vrefp+Vt or Vrefn-Vt, where Vrefp and Vrefn are references applied at a gate of a PMOS or an NMOS transistor, and Vt equals a threshold voltage of the MOS transistor.