公开(公告)号：WO2004021424A1

公开(公告)日：2004-03-11

申请号：PCT/US2003/028219

申请日：2003-08-29

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： WIECZOREK, Karsten ,  RADEHAUS, Christian

IPC: H01L21/28

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A field effect transistor 300 comprises a gate insulation layer including an anisotropic dielectric 305. The orientation is selected such that a first permittivity parallel to the gate insulation layer is significantly less than a second permittivity perpendicular to the gate insulation layer.

Abstract translation: 场效应晶体管300包括包括各向异性介质305的栅极绝缘层。该方向被选择为使得与栅极绝缘层平行的第一介电常数显着小于垂直于栅极绝缘层的第二介电常数。

公开(公告)号：EP1535316A1

公开(公告)日：2005-06-01

申请号：EP03752145.7

申请日：2003-08-29

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： WIECZOREK, Karsten ,  RADEHAUS, Christian

IPC: H01L21/28 ,  H01L29/51

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A field effect transistor 300 comprises a gate insulation layer including an anisotropic dielectric 305. The orientation is selected such that a first permittivity parallel to the gate insulation layer is significantly less than a second permittivity perpendicular to the gate insulation layer.