公开(公告)号：WO1998031048A1

公开(公告)日：1998-07-16

申请号：PCT/US1997019013

申请日：1997-10-10

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  SHEN, Lewis

IPC: H01L21/768

CPC classification number: H01L23/528 ,  H01L21/768 ,  H01L21/76838 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

Abstract: Undercutting (19) of conductive lines (13) in a dense array on a dielectric layer (10) containing an open field is prevented by providing one or more non-functional components (20) such as one or more non-functional conductive lines, in the dielectric layer (10) under the dense array of conductive lines (13).

Abstract translation: 通过提供一个或多个非功能元件（20），例如一个或多个非功能导电线，防止在包含开放场的电介质层（10）上的密集阵列中的导线（13）的底切（19） 在导电线（13）的密集阵列下方的电介质层（10）中。

公开(公告)号：WO1997047033A1

公开(公告)日：1997-12-11

申请号：PCT/US1997001856

申请日：1997-02-04

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  SHEN, Lewis

IPC: H01L21/768

CPC classification number: H01L21/32136 ,  H01L21/76838

Abstract: The high density plasma metal etch rate of a conductive material within a dense array of conductive lines is increased to no less than the etch rate of the conductive material in a bordering open field by injecting a sufficient amount of nitrogen into the total gas flow of the plasma. The injection of nitrogen in amounts of about 15 % and 50 % by volume of the total gas flow effectively reduces the etch rate differential between the dense array and open field, thereby reducing overetching, resist loss, and oxide loss in the open field, and facilitating planarization.

Abstract translation: 导电材料密集阵列内的导电材料的高密度等离子体金属蚀刻速率通过将足够量的氮注入到全部气体流中而增加到不低于边界开放场中导电材料的蚀刻速率 等离子体。 以总气体流量的约15％和50体积％的量注入氮气有效地降低了致密阵列和开放场之间的蚀刻速率差异，从而减少了开放场中的过蚀刻，抗蚀剂损失和氧化物损失，以及 促进平面化。

公开(公告)号：WO1996021243A1

公开(公告)日：1996-07-11

申请号：PCT/US1995014222

申请日：1995-11-03

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  SHEN, Lewis

IPC: H01L21/321

CPC classification number: H01L21/32136 ,  H01L21/32137

Abstract: Undercutting of conductive lines in a dense array bordered by an open field is avoided by reducing the severity of etching when the conductive material in the open field is substantially removed. In a preferred embodiment, the flow rate of chlorine gas is reduced during high density chlorine plasma etching of a conductive pattern when the conductive material is substantially removed from the open field.

Abstract translation: 当开放场中的导电材料基本上被去除时，通过降低蚀刻的严重性来避免由开放场界定的密集阵列中的导线的底切。 在优选的实施方案中，当导电材料基本上从开放场除去时，在导电图案的高密度氯等离子体蚀刻期间，氯气的流速减小。

公开(公告)号：EP0902972A1

公开(公告)日：1999-03-24

申请号：EP97905783.0

申请日：1997-02-04

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： SHEN, Lewis

IPC: H01L21

CPC classification number: H01L21/32136 ,  H01L21/76838

Abstract: The high density plasma metal etch rate of a conductive material within a dense array of conductive lines is increased to no less than the etch rate of the conductive material in a bordering open field by injecting a sufficient amount of nitrogen into the total gas flow of the plasma. The injection of nitrogen in amounts of about 15 % and 50 % by volume of the total gas flow effectively reduces the etch rate differential between the dense array and open field, thereby reducing overetching, resist loss, and oxide loss in the open field, and facilitating planarization.

公开(公告)号：EP0748518B1

公开(公告)日：2000-08-23

申请号：EP95939712.6

申请日：1995-11-03

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： SHEN, Lewis

IPC: H01L21/321 ,  H01L21/768

CPC classification number: H01L21/32136 ,  H01L21/32137

Abstract: Undercutting of conductive lines in a dense array bordered by an open field is avoided by reducing the severity of etching when the conductive material in the open field is substantially removed. In a preferred embodiment, the flow rate of chlorine gas is reduced during high density chlorine plasma etching of a conductive pattern when the conductive material is substantially removed from the open field.

公开(公告)号：EP0748518A1

公开(公告)日：1996-12-18

申请号：EP95939712.0

申请日：1995-11-03

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： SHEN, Lewis

IPC: C23F4 ,  H01L21 ,  H01L23

CPC classification number: H01L21/32136 ,  H01L21/32137

Abstract: Undercutting of conductive lines in a dense array bordered by an open field is avoided by reducing the severity of etching when the conductive material in the open field is substantially removed. In a preferred embodiment, the flow rate of chlorine gas is reduced during high density chlorine plasma etching of a conductive pattern when the conductive material is substantially removed from the open field.