公开(公告)号：WO1997011488A1

公开(公告)日：1997-03-27

申请号：PCT/US1996013931

申请日：1996-08-30

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  STOLMEIJER, Andre

IPC: H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/768 ,  H01L21/76807 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A novel interconnect layout method and metallization scheme is provided. The process of the present invention provides a multilevel interconnect structure formed solely from patterned metal layers (32, 36) stacked on top of each other. Both interconnect lines which form electrical connections along horizontal paths, as well as contacts which form electrical connections along vertical paths, can be formed using patterned metal interconnects as building-blocks. To form thicker metal layers for the purpose of constructing thick interconnect lines, two or more patterned metal layers may be stacked on each other.

Abstract translation: 提供了一种新颖的互连布局方法和金属化方案。 本发明的方法提供了仅由堆叠在彼此顶部的图案化金属层（32,36）形成的多层互连结构。 可以使用图案化的金属互连作为构建块来形成沿着水平路径形成电连接的两条互连线以及沿垂直路径形成电连接的触点。 为了形成较厚的金属层用于构造厚的互连线，两个或多个图案化的金属层可以彼此堆叠。

公开(公告)号：WO1997040526A1

公开(公告)日：1997-10-30

申请号：PCT/US1997000961

申请日：1997-02-04

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  STOLMEIJER, Andre

IPC: H01L21/033

CPC classification number: H01L21/76816 ,  H01L21/0337 ,  H01L21/31144

Abstract: The present invention provides a method for fabricating small structures to be employed in integrated circuits formed on a semiconductor substrate (12). Examples of such small structures include contacts, vias, and metal lines. The method of the present invention employs an image reversal technique to obtain improved feature definition. In forming a feature (28) in a layer of material (16), a clear field reticle is used to form patterned segments of photoresist (18) each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features (28) intended to be formed in the layer of material (16). This method is employed instead of using a dark field reticle which forms windows in a photoresist each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features (28) intended to be formed in the layer of material (16). For small structures, the openings or windows in a photoresist are harder to form than the patterned segments of photoresist (18). With the method of the present invention which employs a clear field reticle to form a mask comprising patterned segments of photoresist (18), the limitations of patterning small windows in a photoresist with the use of a dark field reticle are avoided. The accuracy of forming the small structures is thus improved.

Abstract translation: 本发明提供了一种制造用于形成在半导体衬底（12）上的集成电路中的小结构的方法。 这种小结构的实例包括接触，通孔和金属线。 本发明的方法采用图像反转技术来获得改进的特征定义。 在形成材料层（16）中的特征（28）时，使用清晰的场标线来形成光刻胶（18）的图案化部分，每个光刻胶具有尺寸，形状和与尺寸基本相同的位置，形状 ，以及旨在形成在材料层（16）中的特征（28）之一的位置。 采用这种方法代替使用在光刻胶中形成窗口的暗场掩模版，每个光刻胶的尺寸，形状和位置基本上等于一个特征（28）的尺寸，形状和位置， 形成在材料层（16）中。 对于小结构，光致抗蚀剂中的开口或窗口比光致抗蚀剂（18）的图案化部分更难形成。 利用本发明的采用清晰的场地掩模版形成包含光刻胶（18）的图案化部分的掩模的本发明的方法，避免了使用暗区掩模版对光致抗蚀剂中的小窗口进行图形化的限制。 从而提高了形成小结构的精度。

公开(公告)号：EP0895656B1

公开(公告)日：2002-05-08

申请号：EP97903893.2

申请日：1997-02-04

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： STOLMEIJER, Andre

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/76816 ,  H01L21/0337 ,  H01L21/31144

Abstract: The present invention provides a method for fabricating small structures to be employed in integrated circuits formed on a semiconductor substrate (12). Examples of such small structures include contacts, vias, and metal lines. The method of the present invention employs an image reversal technique to obtain improved feature definition. In forming a feature (28) in a layer of material (16), a clear field reticle is used to form patterned segments of photoresist (18) each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features (28) intended to be formed in the layer of material (16). This method is employed instead of using a dark field reticle which forms windows in a photoresist each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features (28) intended to be formed in the layer of material (16). For small structures, the openings or windows in a photoresist are harder to form than the patterned segments of photoresist (18). With the method of the present invention which employs a clear field reticle to form a mask comprising patterned segments of photoresist (18), the limitations of patterning small windows in a photoresist with the use of a dark field reticle are avoided. The accuracy of forming the small structures is thus improved.

公开(公告)号：EP0852065A1

公开(公告)日：1998-07-08

申请号：EP96929801.0

申请日：1996-08-30

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： STOLMEIJER, Andre

IPC: H01L21 ,  H01L23

CPC classification number: H01L23/5226 ,  H01L21/768 ,  H01L21/76807 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A novel interconnect layout method and metallization scheme is provided. The process of the present invention provides a multilevel interconnect structure formed solely from patterned metal layers (32, 36) stacked on top of each other. Both interconnect lines which form electrical connections along horizontal paths, as well as contacts which form electrical connections along vertical paths, can be formed using patterned metal interconnects as building-blocks. To form thicker metal layers for the purpose of constructing thick interconnect lines, two or more patterned metal layers may be stacked on each other.

公开(公告)号：EP0852065B1

公开(公告)日：2001-10-17

申请号：EP96929801.7

申请日：1996-08-30

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： STOLMEIJER, Andre

IPC: H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/768 ,  H01L21/76807 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A novel interconnect layout method and metallization scheme is provided. The process of the present invention provides a multilevel interconnect structure formed solely from patterned metal layers (32, 36) stacked on top of each other. Both interconnect lines which form electrical connections along horizontal paths, as well as contacts which form electrical connections along vertical paths, can be formed using patterned metal interconnects as building-blocks. To form thicker metal layers for the purpose of constructing thick interconnect lines, two or more patterned metal layers may be stacked on each other.

公开(公告)号：EP0895656A1

公开(公告)日：1999-02-10

申请号：EP97903893.0

申请日：1997-02-04

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： STOLMEIJER, Andre

IPC: H01L21

CPC classification number: H01L21/76816 ,  H01L21/0337 ,  H01L21/31144

Abstract: The present invention provides a method for fabricating small structures to be employed in integrated circuits formed on a semiconductor substrate (12). Examples of such small structures include contacts, vias, and metal lines. The method of the present invention employs an image reversal technique to obtain improved feature definition. In forming a feature (28) in a layer of material (16), a clear field reticle is used to form patterned segments of photoresist (18) each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features (28) intended to be formed in the layer of material (16). This method is employed instead of using a dark field reticle which forms windows in a photoresist each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features (28) intended to be formed in the layer of material (16). For small structures, the openings or windows in a photoresist are harder to form than the patterned segments of photoresist (18). With the method of the present invention which employs a clear field reticle to form a mask comprising patterned segments of photoresist (18), the limitations of patterning small windows in a photoresist with the use of a dark field reticle are avoided. The accuracy of forming the small structures is thus improved.