公开(公告)号：JPH09186154A

公开(公告)日：1997-07-15

申请号：JP20211996

申请日：1996-07-31

Applicant: ADVANCED MICRO DEVICES INC

Inventor： SHINYA AASAA WAN ,  MOHAMEDO BII BANDARI ,  SHIYAMU GAAGU ,  BURUUSU PITSUKERUSAIMAA

IPC: H01L21/31 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8247 ,  H01L23/29 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing the top-side structure of a semiconductor device. SOLUTION: A thin layer 40 of oxynitride is formed on a device. A patterned metal layer and a SOG(Spin On Glass) layer 42 for flattening are formed on the thin oxynitride layer 40, and then the thin portions of the SOG layer 42 is removed by etching to expose parts of the thin oxynitride layer 40. A thick oxynitride layer 44 is formed so that it will be firmly combined with the thin oxynitride layer. Thereafter, a thin nitride layer permeable to ultraviolet rays may be added to thus obtained structure prior to the application of plastic package material.