公开(公告)号：JPH08330587A

公开(公告)日：1996-12-13

申请号：JP5148096

申请日：1996-03-08

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MOHAMETSUDO ANJIYUUMU ,  KURAUSU EICHI KUUPU ,  MANGU EICHI KIYAU

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure using large tilt angle boron injection for reducing short channel effect and a sub-threshold current on substrate surface and in its vicinity by reducing the shifting or roll-offs of the threshold on the edge of channel. SOLUTION: A semiconductor structure is obtained by injecting boron at a non-vertical angle into the junction part between a channel 14 and a source/ drain 56 and the junction part between a field region 54 and the source/drain 56. By adding boron to a critical region, the threshold adjustment and implantation seeds, which are to be segregated and redistributed caused by the temperature cycle of a process, and a channel-stopping implantation seeds are replenished. By using light-weight boric ions which can be annealed at a low temperature, the disadvantageous redistribution and diffusion caused by high temperature annealing is avoided.