公开(公告)号：JPH08250729A

公开(公告)日：1996-09-27

申请号：JP26179495

申请日：1995-10-09

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MOHAMETSUDO ANJIYUUMU ,  ARAN ERU SUTOYUUBAA ,  IBURAHIMU KEI BAAKI

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/10

Abstract: PROBLEM TO BE SOLVED: To improve the performance of MOSFETs in N-MOS AND P-MOS devices. SOLUTION: An MOS device is provided by using indium as a threshold- adjusting implantation material, which is implantation in a channel region 36 in an N-MOS device and/or a conductor gate 32, which is located on the region 36, in a P-MOS device. Indium ions are comparatively high in immobility and the stability of the location of the MOS device is achieved at the regions of the region 36 and the gate 32, which are implanted with those indium ions. The indium ions are not easily segregated diffused in the lateral direction and the direction vertical to a silicon substrate. For minimizing the problems of the skew of a threshold and an enhancement in the thickness of a gate oxide film, the immobility of the placement of the device is necessary. Moreover, it is believed that indium atoms in the region 36 minimize the effect of hot carriers and problems related to the effect.

公开(公告)号：JPH08330587A

公开(公告)日：1996-12-13

申请号：JP5148096

申请日：1996-03-08

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MOHAMETSUDO ANJIYUUMU ,  KURAUSU EICHI KUUPU ,  MANGU EICHI KIYAU

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure using large tilt angle boron injection for reducing short channel effect and a sub-threshold current on substrate surface and in its vicinity by reducing the shifting or roll-offs of the threshold on the edge of channel. SOLUTION: A semiconductor structure is obtained by injecting boron at a non-vertical angle into the junction part between a channel 14 and a source/ drain 56 and the junction part between a field region 54 and the source/drain 56. By adding boron to a critical region, the threshold adjustment and implantation seeds, which are to be segregated and redistributed caused by the temperature cycle of a process, and a channel-stopping implantation seeds are replenished. By using light-weight boric ions which can be annealed at a low temperature, the disadvantageous redistribution and diffusion caused by high temperature annealing is avoided.

公开(公告)号：JPH08250730A

公开(公告)日：1996-09-27

申请号：JP26179595

申请日：1995-10-09

Applicant: ADVANCED MICRO DEVICES INC

Inventor： MOHAMETSUDO ANJIYUUMU ,  ARAN ERU SUTOYUUBAA ,  IBURAHIMU KEI BAAKI

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08

Abstract: PROBLEM TO BE SOLVED: To improve the performance of MOSFETs in N-MOS and P-MOS devices. SOLUTION: A MOS device is provided by using indium as a threshold value adjusting implantation material, which is implanted in a channel region 36 in an N-MOS device and/or a conductor gate 32, which is located on the region 36, is a P-MOS device. Indium ions are comparatively high in immobility, and the stability of the location of the MOS device is achieved at the regions of the region 36 and the gate 32, which are implanted with the indium ions. The indium ions are not easily segregated and diffused in the lateral direction and the direction vertical to a silicon substrate. For minimizing the problem of the skew of a threshold and an enhancement in the thickness of a gate oxide film, the immobility of the placement of the device is necessary. Moreover, it is believed that indium atoms in the region 36 minimize the effect of hot carries and problems related to the effect.