公开(公告)号：EP1386323A1

公开(公告)日：2004-02-04

申请号：EP02709575.1

申请日：2002-02-19

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： FASTOW, Richard M. ,  GUO, Xin ,  HADDAD, Sameer

IPC: G11C16/34

CPC classification number: G11C16/3409 ,  G11C16/3404

Abstract: A flash memory design with a compact threshold voltage distribution and a method for compacting the threshold voltage for a flash memory design are disclosed. The threshold voltage is compacted by erasing (602) a plurality of memory cells to set the threshold voltage for the memory cells substantially towards a median erased threshold voltage; verifying (604) at least one fast-erase memory cell; selectively soft-programming (606) the memory cells; and erasing (608) subsequent to selectively soft-programming.