THRESHOLD VOLTAGE COMPACTING FOR NON-VOLATILE SEMICONDUCTOR MEMORY DESIGNS
    1.
    发明申请
    THRESHOLD VOLTAGE COMPACTING FOR NON-VOLATILE SEMICONDUCTOR MEMORY DESIGNS 审中-公开
    用于非易失性半导体存储器设计的阈值电压

    公开(公告)号:WO2002091387A1

    公开(公告)日:2002-11-14

    申请号:PCT/US2002/004784

    申请日:2002-02-19

    CPC classification number: G11C16/3409 G11C16/3404

    Abstract: A flash memory design with a compact threshold voltage distribution and a method for compacting the threshold voltage for a flash memory design are disclosed. The threshold voltage is compacted by erasing (602) a plurality of memory cells to set the threshold voltage for the memory cells substantially towards a median erased threshold voltage; verifying (604) at least one fast-erase memory cell; selectively soft-programming (606) the memory cells; and erasing (608) subsequent to selectively soft-programming.

    Abstract translation: 公开了具有紧凑的阈值电压分布的快闪存储器设计和用于压缩闪存设计的阈值电压的方法。 通过擦除(602)多个存储器单元来将阈值电压压缩,以将存储器单元的阈值电压基本上朝向中值擦除阈值电压; 验证(604)至少一个快速擦除存储器单元; 选择性地软编程(606)存储器单元; 以及在选择性软编程之后擦除(608)。

    LOW POWER CHARGE PUMP
    2.
    发明申请
    LOW POWER CHARGE PUMP 审中-公开
    低功率充电泵

    公开(公告)号:WO2005017901A1

    公开(公告)日:2005-02-24

    申请号:PCT/US2004/022986

    申请日:2004-07-15

    Inventor: GUO, Xin

    CPC classification number: H02M3/073

    Abstract: A low power charge pump (300) is disclosed. A pump driving node (270) of a first pump stage is selectively coupled to a pump driving node (271) of the subsequent pump stage. Subsequent to a transfer of charge from a first pump stage to a subsequent stage, the first (270) and subsequent (271) pump driving nodes are coupled. Residual charge on a first stage pump driving node (270) is thereby transferred to a subsequent pump driving node (271). Subsequent to the transfer of charge from the first pump driving node (270) to the second pump driving node (271), the nodes are uncoupled. By selectively coupling a first pump stage to a pump driving node (271) of the subsequent pump stage, the first pump driving node (270) may pre-charge the subsequent pump driving node (271), thereby reducing the energy that must be provided by clock driving circuitry (700) to produce a positive-going transition of a driving clock. Advantageously, pre-charging energy is taken from the first stage, reducing the energy that was heretofore dissipated by clock driving circuitry during a negative-going clock signal transition. In this novel manner conversion efficiency of a charge pump device may be beneficially increased, providing enhanced low power performance.

    Abstract translation: 公开了一种低功率电荷泵(300)。 第一泵级的泵驱动节点(270)选择性地联接到后续泵级的泵驱动节点(271)。 在将电荷从第一泵阶段转移到后续阶段之后,第一(270)和随后的(271)泵驱动节点被联接。 因此,第一级泵驱动节点(270)上的剩余电荷被转移到随后的泵驱动节点(271)。 在将电荷从第一泵驱动节点(270)传递到第二泵驱动节点(271)之后,节点被解耦。 通过将第一泵级选择性地耦合到后续泵级的泵驱动节点(271),第一泵驱动节点(270)可以预先为后续的泵驱动节点(271)充电,从而减少必须提供的能量 通过时钟驱动电路(700)产生驱动时钟的正向转换。 有利地,从第一级获取预充电能量,减少在负向时钟信号转换期间由时钟驱动电路消耗的能量。 以这种新颖的方式,可以有利地增加电荷泵装置的转换效率,从而提供增强的低功率性能。

    THRESHOLD VOLTAGE COMPACTING FOR NON-VOLATILE SEMICONDUCTOR MEMORY DESIGNS
    3.
    发明公开
    THRESHOLD VOLTAGE COMPACTING FOR NON-VOLATILE SEMICONDUCTOR MEMORY DESIGNS 有权
    压缩非易失性存储器的使用电压分布

    公开(公告)号:EP1386323A1

    公开(公告)日:2004-02-04

    申请号:EP02709575.1

    申请日:2002-02-19

    CPC classification number: G11C16/3409 G11C16/3404

    Abstract: A flash memory design with a compact threshold voltage distribution and a method for compacting the threshold voltage for a flash memory design are disclosed. The threshold voltage is compacted by erasing (602) a plurality of memory cells to set the threshold voltage for the memory cells substantially towards a median erased threshold voltage; verifying (604) at least one fast-erase memory cell; selectively soft-programming (606) the memory cells; and erasing (608) subsequent to selectively soft-programming.

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