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1.发明申请REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD 审中-公开降低反向短路通道效应与光通量的高剂量在N通道LDD
公开(公告)号：WO1997036331A1
公开(公告)日：1997-10-02
申请号：PCT/US1996016540
申请日：1996-10-16
Applicant: ADVANCED MICRO DEVICES, INC.
IPC: H01L29/78
CPC classification number: H01L29/6659 , H01L29/7836
Abstract: Submicron nLDD CMOS logic devices with improved current drive and reduced reverse short-channel effects having heavily doped As and lightly doped P nLDD region.
Abstract translation: 亚微米nLDD CMOS逻辑器件具有改进的电流驱动和减少的反向短沟道效应，具有重掺杂的As和轻掺杂的P nLDD区域。
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2.发明公开As/P HYBRID nLDD JUNCTION AND MEDIUM Vdd OPERATION FOR HIGH SPEED MICROPROCESSORS 失效混合用作高速微处理器/ P-N型LDD转变，中小型VDD操作
公开(公告)号：EP0966762A1
公开(公告)日：1999-12-29
申请号：EP98904623.0
申请日：1998-01-21
Applicant: ADVANCED MICRO DEVICES INC.
Inventor： NAYAK, Deepak, Kumar , RAKKHIT, Rajat , HAO, Ming-Yin
CPC classification number: H01L29/6659 , H01L29/7836
Abstract: A method of manufacturing a semiconductor device wherein hybrid nLDD regions are formed by implanting arsenic ions and phosphorous ions in source and drain regions of a substrate. The source and drain regions are formed by implanting either arsenic or phosphorous ions.
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3.发明公开REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD 失效降低反向短沟道效应低剂量和高剂量p关闭OFF IN A N沟道LDD
公开(公告)号：EP0891635A1
公开(公告)日：1999-01-20
申请号：EP96936545.0
申请日：1996-10-16
Applicant: ADVANCED MICRO DEVICES INC.
Inventor： NAYAK, Deepak, Kumar , HEILER, Felicia , RAKKHIT, Rajat
CPC classification number: H01L29/6659 , H01L29/7836
Abstract: Submicron nLDD CMOS logic devices with improved current drive and reduced reverse short-channel effects having heavily doped As and lightly doped P nLDD region.
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