公开(公告)号：EP1356505A1

公开(公告)日：2003-10-29

申请号：EP01957475.5

申请日：2001-08-06

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： HADDAD, Sameer ,  RANDOLPH, Mark, W. ,  HE, Yue-Song ,  THURGATE, Timothy ,  CHANG, Chi ,  WONG, Ngaching

IPC: H01L21/336 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/66825 ,  H01L29/66833

Abstract: One aspect of the present invention relates to a method of making a flash memory cell (32), involving providing a substrate (30) having a flash memory cell (32) thereon; forming a self-aligned source mask (48) over the substrate, the self aligned source mask (48) having openings (50) corresponding to source lines; implanting a source dopant of a first type in the substrate through the openings (50) in the self-aligned source mask (48) corresponding to source lines (52); removing the self-aligned source mask (48) from the substrate (30); forming a MDD mask (54) over the substrate (30), the MDD mask (54) covering the source lines (52) and having openings (56) corresponding to drain lines; and implanting a medium dosage drain implant of a second type to form a drain region (58) in the substrate (30) adjacent the flash memory cell (32).