公开(公告)号：EP1008157A4

公开(公告)日：2001-02-07

申请号：EP96937640

申请日：1996-09-25

Applicant: ADVANCED REFRACTORY TECH

Inventor： GOEL ARVIND ,  BRAY DONALD J ,  MARTIN STEVEN C ,  BLAKELY KEITH A

IPC: H01G4/33 ,  H01B5/16 ,  H01G4/08 ,  H01G4/30 ,  H01G4/06

CPC classification number: H01G4/08 ,  Y10S427/103 ,  Y10T29/435

Abstract: A method of making capacitors (25) comprising, providing as the dielectric (27) and/or conductive layers (26), a material made from a diamond-like nanocomposite solid-state material having interpenetrating atomic scale networks of carbon in a diamond-like carbon network stabilized by hydrogen, a glass-like silicon network stabilized by oxygen, and optionally at least one additional network of dopant elements or dopant compounds having elements from Groups 1-7b and 8 of the periodic table.

公开(公告)号：AU700713B2

公开(公告)日：1999-01-14

申请号：AU7513296

申请日：1996-09-25

Applicant: ADVANCED REFRACTORY TECH

Inventor： GOEL ARVIND ,  BRAY DONALD J ,  MARTIN STEVEN C ,  BLAKELY KEITH A

IPC: H01G4/33 ,  H01B5/16 ,  H01G4/08 ,  H01G4/30 ,  H01G4/06

Abstract: A method of making capacitors comprising, providing as the dielectric and/or conductive layers, a material made from a diamond-like nanocomposite solid-state material having interpenetrating atomic scale networks of carbon in a diamond-like carbon network stabilized by hydrogen, a glass-like silicon network stabilized by oxygen, and optionally at least one additional network of dopant elements or dopant compounds having elements from Groups 1-7b and 8 of the periodic table.

公开(公告)号：MX9802581A

公开(公告)日：1998-11-30

申请号：MX9802581

申请日：1998-04-02

Applicant: ADVANCED REFRACTORY TECH

Inventor： GOEL ARVIND ,  BRAY DONALD J ,  MARTIN STEVEN C ,  BLAKELY KEITH A

IPC: H01B5/16 ,  H01G4/33 ,  H01G4/08 ,  H01G4/30 ,  H01G04/06

Abstract: Se proporciona un método para fabricar capacitores (25) que comprende, proporcionar como las capas dieléctricas (27) y/o conductoras (26) un material fabricado de un material en estado solido de nanocompuestos, similar a diamante que tiene redes a escala atomica interpenetrantes de carbono en una red de carbono similar a diamante estabilizada por hidrogeno, una red de silicio similar a vidrio estabilizada por oxígeno y opcionalmente por los menos una red adicional de elementos como impurezas o compuestos como impurezas que tienen elementos de los grupos 1-7b y 8 de la tabla periodica.

公开(公告)号：CA2233631A1

公开(公告)日：1997-04-10

申请号：CA2233631

申请日：1996-09-25

Applicant: ADVANCED REFRACTORY TECH

Inventor： MARTIN STEVEN C ,  BLAKELY KEITH A ,  BRAY DONALD J ,  GOEL ARVIND

IPC: H01G4/33 ,  H01B5/16 ,  H01G4/08 ,  H01G4/30 ,  H01B19/00

Abstract: A method of making capacitors (25) comprising, providing as the dielectric (27) and/or conductive layers (26), a material made from a diamond-like nanocomposite solid-state material having interpenetrating atomic scale networks of carbon in a diamond-like carbon network stabilized by hydrogen, a glass-like silicon network stabilized by oxygen, and optionally at least one additional network of dopant elements or dopant compounds having elements from Groups 1-7b and 8 of the periodic table.