HARDCOATS FOR FLAT PANEL DISPLAY SUBSTRATES
    3.
    发明申请
    HARDCOATS FOR FLAT PANEL DISPLAY SUBSTRATES 审中-公开
    用于平板显示器基板的硬膜

    公开(公告)号:WO0006794A9

    公开(公告)日:2000-08-03

    申请号:PCT/US9917203

    申请日:1999-07-27

    Abstract: The present invention relates to a unique hard coating that provides the necessary characteristics for flat panel display plastic substrates because the coating is amorphous and is comprised of C, H, Si and O. The coating of the present invention is hard, optically transparent, scratch and abrasion resistant and hydrophobic. It is deposited by a low density, low temperature plasma enhanced chemical vapor deposition (PECVD) process and exhibits excellent barrier protection and reduced permeability to moisture, oxygen, helium and other vapors.

    Abstract translation: 本发明涉及一种为平板显示器塑料基材提供必要特性的独特硬涂层,因为该涂层是无定形的并且由C,H,Si和O构成。本发明的涂层硬,光学透明,刮擦 耐磨和疏水。 它通过低密度,低温等离子体增强化学气相沉积(PECVD)工艺进行沉积,并具有出色的阻隔保护作用和降低的水分,氧气,氦气和其他蒸气的渗透性。

    METHOD OF POLISHING CVD DIAMOND FILMS BY OXYGEN PLASMA
    5.
    发明公开
    METHOD OF POLISHING CVD DIAMOND FILMS BY OXYGEN PLASMA 审中-公开
    法抛光CVD金刚石膜使用氧等离子体

    公开(公告)号:EP1027483A4

    公开(公告)日:2003-09-10

    申请号:EP98954990

    申请日:1998-10-15

    CPC classification number: C30B33/00 C30B29/04

    Abstract: A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2F6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm2 and about 1.1 watts/cm2 for a first duration, and maintaining temperature in the reactor at between about 200 DEG to about 400 DEG . The method may alternatively comprise disposing a sputter gas such as Ar,O2 or N2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm2 and about 7.5 watts/cm2 for a first duration, and performing a sputter etch, disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2F6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm2 and about 3.0 watts/cm2 for a second duration.

Patent Agency Ranking