公开(公告)号：EP1027483A4

公开(公告)日：2003-09-10

申请号：EP98954990

申请日：1998-10-15

Applicant: ADVANCED REFRACTORY TECH

Inventor： NASSER-FAILI FIROZ ,  HERB JOHN A ,  MORENO MIGUEL A

IPC: C30B33/12 ,  C30B29/04 ,  C30B33/00

CPC classification number: C30B33/00 ,  C30B29/04

Abstract: A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2F6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm2 and about 1.1 watts/cm2 for a first duration, and maintaining temperature in the reactor at between about 200 DEG to about 400 DEG . The method may alternatively comprise disposing a sputter gas such as Ar,O2 or N2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm2 and about 7.5 watts/cm2 for a first duration, and performing a sputter etch, disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2F6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm2 and about 3.0 watts/cm2 for a second duration.