公开(公告)号：WO2012154498A3

公开(公告)日：2013-01-31

申请号：PCT/US2012036329

申请日：2012-05-03

Applicant: ADVANCED TECH MATERIALS ,  CHEN LI-MIN RAYMOND ,  COOPER EMANUEL I ,  BARNES JEFFREY A ,  LIU JUN ,  SUN LAISHENG ,  BAUM THOMAS ,  KORZENSKI MICHAEL ,  LOCHTENBERG BEN ,  DUBOIS LAWRENCE

Inventor： CHEN LI-MIN RAYMOND ,  COOPER EMANUEL I ,  BARNES JEFFREY A ,  LIU JUN ,  SUN LAISHENG ,  BAUM THOMAS ,  KORZENSKI MICHAEL ,  LOCHTENBERG BEN ,  DUBOIS LAWRENCE

IPC: H01L31/042 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/02052 ,  C11D3/042 ,  C11D3/046 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0041 ,  C11D11/0047 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Removal compositions and processes for removing at least one metal impurity from a substrate (e.g., a silicon-containing substrate) having same thereon. Advantageously, the compositions remove metal impurities, e.g., iron, from silicon-containing substrates used as semiconductor devices and solar cell devices.

Abstract translation: 去除组合物和从其上具有相同的基底（例如含硅基底）去除至少一种金属杂质的方法。 有利地，组合物从用作半导体器件和太阳能电池器件的含硅衬底中除去金属杂质，例如铁。

公开(公告)号：EP1068214A4

公开(公告)日：2001-11-07

申请号：EP99950139

申请日：1999-10-04

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS ,  DUBOIS RAYMOND H

IPC: C07C49/92 ,  C07F9/94 ,  C23C16/18 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/409 ,  C07F9/94 ,  Y10S427/101

Abstract: Anhydrous mononuclear Lewis base adducted tris(β-diketonato) bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(β-diketonato) bismuth complexes of the prior art.

Abstract translation: 用于液体输送MOCVD包含甲苯和路易斯碱中有用的溶剂组合物，worin甲苯存在于按体积计从约75％的浓度至约98％，基于甲苯的总体积和路易斯碱上。 搜索溶剂组合物被有效地采用以溶解或其中的暂停前体为液体输送MOCVD，E. G.，铁电材料膜的MOCVD：如SBT。

公开(公告)号：DE69906501D1

公开(公告)日：2003-05-08

申请号：DE69906501

申请日：1999-10-04

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS ,  DUBOIS H

IPC: C07C49/92 ,  C07F9/94 ,  C23C16/18 ,  C23C16/40 ,  H01L21/316

Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.

公开(公告)号：AT405621T

公开(公告)日：2008-09-15

申请号：AT03779251

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL ,  GHENCIU ELIODOR ,  XU CHONGYING ,  BAUM THOMAS

IPC: C09K13/00 ,  C03C15/00 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

公开(公告)号：DE69906501T2

公开(公告)日：2004-02-05

申请号：DE69906501

申请日：1999-10-04

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS ,  DUBOIS H

IPC: C07C49/92 ,  C07F9/94 ,  C23C16/18 ,  C23C16/40 ,  H01L21/316

Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.

公开(公告)号：EP1144718A4

公开(公告)日：2003-09-03

申请号：EP99966351

申请日：1999-12-20

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BAUM THOMAS

IPC: C07C49/92 ,  C07C55/02 ,  C07C55/32 ,  C07C59/195 ,  C07C59/21 ,  C07F5/00 ,  C23C14/48 ,  C23C16/18 ,  H01L21/265 ,  H01L21/285 ,  C23C16/00 ,  H01L29/76

CPC classification number: H01L21/28556 ,  C07F5/00 ,  C23C16/18 ,  H01L21/26513 ,  Y10S427/101

Abstract: An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is beta -diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.