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1.发明申请REMOVAL OF METAL IMPURITIES FROM SILICON SURFACES FOR SOLAR CELL AND SEMICONDUCTOR APPLICATIONS 审中-公开从太阳能电池和半导体应用的硅表面去除金属污染
公开(公告)号：WO2012154498A3
公开(公告)日：2013-01-31
申请号：PCT/US2012036329
申请日：2012-05-03
Applicant: ADVANCED TECH MATERIALS , CHEN LI-MIN RAYMOND , COOPER EMANUEL I , BARNES JEFFREY A , LIU JUN , SUN LAISHENG , BAUM THOMAS , KORZENSKI MICHAEL , LOCHTENBERG BEN , DUBOIS LAWRENCE
Inventor： CHEN LI-MIN RAYMOND , COOPER EMANUEL I , BARNES JEFFREY A , LIU JUN , SUN LAISHENG , BAUM THOMAS , KORZENSKI MICHAEL , LOCHTENBERG BEN , DUBOIS LAWRENCE
IPC: H01L31/042 , H01L21/306 , H01L31/18
CPC classification number: H01L21/02052 , C11D3/042 , C11D3/046 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/267 , C11D7/3209 , C11D7/3245 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D11/0041 , C11D11/0047 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: Removal compositions and processes for removing at least one metal impurity from a substrate (e.g., a silicon-containing substrate) having same thereon. Advantageously, the compositions remove metal impurities, e.g., iron, from silicon-containing substrates used as semiconductor devices and solar cell devices.
Abstract translation: 去除组合物和从其上具有相同的基底（例如含硅基底）去除至少一种金属杂质的方法。 有利地，组合物从用作半导体器件和太阳能电池器件的含硅衬底中除去金属杂质，例如铁。
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公开(公告)号：WO2008157345A2
公开(公告)日：2008-12-24
申请号：PCT/US2008066906
申请日：2008-06-13
Applicant: ADVANCED TECH MATERIALS , VISINTIN PAMELA , JIANG PING , KORZENSKI MICHAEL , KING MACKENZIE , HAN JIANWEN , HILGARTH MONICA , LIU JUN , ZHOU RENJIE , MINSEK DAVID
Inventor： VISINTIN PAMELA , JIANG PING , KORZENSKI MICHAEL , KING MACKENZIE , HAN JIANWEN , HILGARTH MONICA , LIU JUN , ZHOU RENJIE , MINSEK DAVID
CPC classification number: C11D11/0047 , C09K13/08 , C11D3/3947 , C11D3/3956 , C11D7/08 , C11D7/3209 , C11D7/3218 , C11D7/3281 , H01L21/02079 , H01L21/31111
Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition preferably includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. Processes include the monitoring and modifying said compositions.
Abstract translation: 去除组合物和从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物优选包含氢氟酸。 组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。 方法包括监测和修饰所述组合物。
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公开(公告)号：WO2009026324A3
公开(公告)日：2009-05-14
申请号：PCT/US2008073650
申请日：2008-08-20
Applicant: ADVANCED TECH MATERIALS , ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
Inventor： ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
IPC: C11D7/08 , C01B32/50 , C11D7/26 , H01L21/027
CPC classification number: G03F7/423 , H01L21/31133
Abstract: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
Abstract translation: 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和含有无机酸的组合物。 含无机酸的组合物包括至少一种无机酸，至少一种含硫氧化剂和任选的至少一种含金属离子的催化剂。 含有无机酸的组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。
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公开(公告)号：SG184881A1
公开(公告)日：2012-11-29
申请号：SG2012076683
申请日：2011-04-15
Applicant: ADVANCED TECH MATERIALS
Inventor： BROSSEAU ANDRE , GRIGORENKO SVITLANA , JIANG PING , KORZENSKI MICHAEL
Abstract: Processes for recycling printed wire boards using environmentally-friendly compositions, wherein electronic components, precious metals and base metals may be collected for reuse and recycling.
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公开(公告)号：AP201206529A0
公开(公告)日：2012-10-31
申请号：AP201206529
申请日：2011-04-15
Applicant: ADVANCED TECH MATERIALS
Inventor： BROSSEAU ANDRÉ , GRIGORENKO SVITLANA , JIANG PING , KORZENSKI MICHAEL
CPC classification number: H05K3/22 , C22B7/007 , C22B7/008 , C22B11/046 , C23F1/44 , C25C1/20 , H05K2203/176 , H05K2203/178 , Y02P10/214 , Y02P10/234 , Y02P20/582 , Y02P70/613 , Y02W30/54 , Y10T29/49815
Abstract: Processes for recycling printed wire boards using environmentally-friendly compositions, wherein electronic components, precious metals and base metals may be collected for reuse and recycling.
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Patent Agency Ranking
公开(公告)号：AP2012006529A0
公开(公告)日：2012-10-31
申请号：AP2012006529
申请日：2011-04-15
Applicant: ADVANCED TECH MATERIALS
Inventor： BROSSEAU ANDRÉ , GRIGORENKO SVITLANA , JIANG PING , KORZENSKI MICHAEL
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公开(公告)号：SG183744A1
公开(公告)日：2012-09-27
申请号：SG2012061735
申请日：2008-08-20
Applicant: ADVANCED TECH MATERIALS
Inventor： ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
IPC: C01B32/50
Abstract: COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESISTA method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).Fig. IA
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公开(公告)号：AT405621T
公开(公告)日：2008-09-15
申请号：AT03779251
申请日：2003-10-27
Applicant: ADVANCED TECH MATERIALS
Inventor： KORZENSKI MICHAEL , GHENCIU ELIODOR , XU CHONGYING , BAUM THOMAS
IPC: C09K13/00 , C03C15/00 , C09K13/04 , C09K13/06 , C09K13/08 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D11/00 , H01L21/02 , H01L21/302 , H01L21/3213
Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.
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9.发明公开COMPOSITIONS AND METHODS FOR DRYING PATTERNED WAFERS DURING MANUFACTURE OF INTEGRATED CIRCUITRY PRODUCTS 审中-公开ZUSAMMENSETZUNGEN UND VERFAHREN ZUM TROCKNEN VON STRUKTURIERTEN WAFERN贝德尔海斯特赖恩VON INTEGRIERTEN SCHALTUNGSPRODUKTEN
公开(公告)号：EP1765526A4
公开(公告)日：2007-11-14
申请号：EP04751653
申请日：2004-05-07
Applicant: ADVANCED TECH MATERIALS
Inventor： XU CHONGYING , KORZENSKI MICHAEL , BAUM THOMAS H , BOROVIK ALEXANDER , GHENCIU ELIODOR G
CPC classification number: B08B7/0021
Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.
Abstract translation: 图案化晶片的干燥以实现从图案化晶片中除去水而不塌陷或其图案结构劣化的方式来实现。 在本发明的一个方面中，用含有超临界流体和至少一种水反应剂的组合物进行干燥，所述水反应剂与水化学反应形成比水更易溶于超临界流体的反应产物。 描述了使用超临界流体来干燥图案化晶片的各种方法，其避免超临界流体（例如超临界二氧化碳）的（低水溶性）缺乏。
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公开(公告)号：EP2190967A4
公开(公告)日：2010-10-13
申请号：EP08827598
申请日：2008-08-20
Applicant: ADVANCED TECH MATERIALS
Inventor： ZHOU RENJIE , COOPER EMANUEL , KORZENSKI MICHAEL , JIANG PING
CPC classification number: G03F7/423 , H01L21/31133
Abstract: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
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