公开(公告)号：WO2012174518A2

公开(公告)日：2012-12-20

申请号：PCT/US2012042925

申请日：2012-06-18

Applicant: ADVANCED TECH MATERIALS ,  WU HSING-CHEN ,  COOPER EMANUEL I ,  KOJI YUKICHI ,  BARNES JEFFREY A ,  SHYU JIEH-HWA ,  IDA TOSHIYUKI ,  HUANG YUNG-HSIN ,  HSU HENG-KAI ,  HSU WISMA

Inventor： WU HSING-CHEN ,  COOPER EMANUEL I ,  KOJI YUKICHI ,  BARNES JEFFREY A ,  SHYU JIEH-HWA ,  IDA TOSHIYUKI ,  HUANG YUNG-HSIN ,  HSU HENG-KAI ,  HSU WISMA

CPC classification number: H01L21/31111

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to silicon oxide materials from a microelectronic device having same thereon. The removal compositions include at least one alkoxysilane, at least one etchant, at least one oxidizing agent, at least one organic solvent, and water.

Abstract translation: 可用于相对于氧化硅材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括至少一种烷氧基硅烷，至少一种蚀刻剂，至少一种氧化剂，至少一种有机溶剂和水。

公开(公告)号：WO2012027667A3

公开(公告)日：2012-05-10

申请号：PCT/US2011049347

申请日：2011-08-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

IPC: H01L21/302

CPC classification number: C09C3/08 ,  B81C1/00619 ,  B81C1/00928 ,  H01L21/02082 ,  H01L21/302 ,  H01L21/306

Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

Abstract translation: 在干燥过程中减少脆性高纵横比结构所经受的毛细管力的方法，以基本上防止在干燥过程中对所述高纵横比结构造成损坏。 它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。

公开(公告)号：WO2012097143A3

公开(公告)日：2013-01-10

申请号：PCT/US2012021069

申请日：2012-01-12

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  BARNES JEFFREY A

Inventor： COOPER EMANUEL I ,  BARNES JEFFREY A

IPC: H01L21/302 ,  H01L21/265

CPC classification number: H01L21/02076 ,  H01L21/02057 ,  H01L21/31133

Abstract: Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoidcontaining solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.

Abstract translation: 用于从微电子器件或微电子器件制造硬件的表面去除含镧系元素的固体和/或物质的组合物和方法。 优选地，含镧系元素的固体和/或物质包括铈。 组合物优选基本上不含氟离子。

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2012051380A3

公开(公告)日：2012-07-12

申请号：PCT/US2011056084

申请日：2011-10-13

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  TOTIR GEORGE GABRIEL ,  PAYNE MAKONNEN ,  IBM

Inventor： COOPER EMANUEL I ,  TOTIR GEORGE GABRIEL ,  PAYNE MAKONNEN

IPC: C11D7/32 ,  C09K13/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304

CPC classification number: C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

Abstract: Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁残留物的清洁组合物和方法。 组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并且实现残余物质的高效清洁，包括后灰渣残留物，蚀刻后残留物，CMP后残留物，颗粒， 有机污染物，金属离子污染物及其组合，同时不损坏也存在于该装置上的氮化钛层和低k电介质材料。

公开(公告)号：WO2008080097A3

公开(公告)日：2008-10-09

申请号：PCT/US2007088644

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

IPC: C11D11/00 ,  C11D1/62 ,  C11D3/00 ,  C11D3/02 ,  C11D3/24 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/50

CPC classification number: C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

Abstract translation: 用于从其上具有所述残余物的微电子装置清除等离子体后蚀刻残留物的清洁组合物和方法。 该组合物实现了对来自微电子器件的残留物材料（包括含钛，含铜，含钨和/或含钴的蚀刻后残留物）的高效清洁，同时不损伤层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 另外，该组合物可用于从其上具有相同材料的微电子器件去除氮化钛层。

公开(公告)号：WO2012154498A3

公开(公告)日：2013-01-31

申请号：PCT/US2012036329

申请日：2012-05-03

Applicant: ADVANCED TECH MATERIALS ,  CHEN LI-MIN RAYMOND ,  COOPER EMANUEL I ,  BARNES JEFFREY A ,  LIU JUN ,  SUN LAISHENG ,  BAUM THOMAS ,  KORZENSKI MICHAEL ,  LOCHTENBERG BEN ,  DUBOIS LAWRENCE

Inventor： CHEN LI-MIN RAYMOND ,  COOPER EMANUEL I ,  BARNES JEFFREY A ,  LIU JUN ,  SUN LAISHENG ,  BAUM THOMAS ,  KORZENSKI MICHAEL ,  LOCHTENBERG BEN ,  DUBOIS LAWRENCE

IPC: H01L31/042 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/02052 ,  C11D3/042 ,  C11D3/046 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0041 ,  C11D11/0047 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Removal compositions and processes for removing at least one metal impurity from a substrate (e.g., a silicon-containing substrate) having same thereon. Advantageously, the compositions remove metal impurities, e.g., iron, from silicon-containing substrates used as semiconductor devices and solar cell devices.

Abstract translation: 去除组合物和从其上具有相同的基底（例如含硅基底）去除至少一种金属杂质的方法。 有利地，组合物从用作半导体器件和太阳能电池器件的含硅衬底中除去金属杂质，例如铁。

公开(公告)号：WO2012048079A2

公开(公告)日：2012-04-12

申请号：PCT/US2011055049

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

IPC: C23F1/02 ,  C23F1/44

CPC classification number: H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract translation: 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地移除第一金属栅极材料（例如，氮化钛）的移除组合物和工艺。 去除组合物可以包括氟化物或者可选地基本上不含氟化物。 衬底优选地包括高k /金属栅集成方案。

公开(公告)号：WO2007134183A3

公开(公告)日：2008-01-17

申请号：PCT/US2007068693

申请日：2007-05-10

Applicant: ADVANCED TECH MATERIALS ,  ARNO JOSE I ,  WANG LUPING ,  COOPER EMANUEL I

Inventor： ARNO JOSE I ,  WANG LUPING ,  COOPER EMANUEL I

IPC: B01J8/02 ,  B01J35/02

CPC classification number: F17C11/00

Abstract: A system (10) including a reagent supply container (12) in which a vessel (14) holds a composition including a chemical reagent dissolved or dispersed in a storage liquid (18) that is reversibly interactive with the chemical reagent to store the chemical reagent therein, and an ultrasonic energy source (19, 32, 34) adapted to introduce ultrasonic energy into the composition to liberate the chemical reagent therefrom for dispensing from the vessel of the reagent supply container. The ultrasonic energy source can be internally provided in the container, or may be provided as part of an external ultrasonic energy impingement unit (112), in which the stored chemical reagent, e.g., a microelectronic device manufacturing reagent, is extracted from the liquid storage medium for transport to a reagent-utilizing process or facility (38). The liquid storage medium may for example include an ionic liquid with which the chemical reagent is reversibly taken up, and subsequently released under ultrasonic energy exposure dispensing conditions.

Abstract translation: 一种系统（10），包括试剂供应容器（12），其中容器（14）保持包含溶解或分散在与化学试剂可逆地相互作用的储存液体（18）中的化学试剂的组合物，以储存化学试剂 和超声能量源（19,32,34），其适于将超声能量引入所述组合物中以释放其中的化学试剂，用于从所述试剂供应容器的容器分配。 超声能量源可以内部设置在容器中，或者可以作为外部超声波能量冲击单元（112）的一部分提供，其中存储的化学试剂例如微电子器件制造试剂从液体存储器 用于运送到试剂利用过程或设施（38）的介质。 液体存储介质可以例如包括离子液体，化学试剂可以通过该离子液体被可逆地吸收，并且随后在超声能量曝光分配条件下释放。

公开(公告)号：WO2015095175A1

公开(公告)日：2015-06-25

申请号：PCT/US2014070566

申请日：2014-12-16

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： BILODEAU STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  WANG CHIEH JU ,  WU HSING-CHEN ,  TU SHENG-HUNG ,  PARSON THOMAS ,  YANG MIN-CHIEH

IPC: H01L21/18 ,  H01L21/306

CPC classification number: H01L21/32134 ,  H01L21/24 ,  H01L21/246 ,  H01L21/32051 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

Abstract translation: 用于相对于金属锗化物（例如，NiGe），金属III-V族材料和锗的微量电子器件选择性地除去未反应的金属材料（例如未反应的镍）的组合物和方法。 组合物基本上与微电子器件上存在的其它材料相容，如低k电介质和氮化硅。