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1.发明申请REMOVAL OF METAL IMPURITIES FROM SILICON SURFACES FOR SOLAR CELL AND SEMICONDUCTOR APPLICATIONS 审中-公开从太阳能电池和半导体应用的硅表面去除金属污染
公开(公告)号：WO2012154498A3
公开(公告)日：2013-01-31
申请号：PCT/US2012036329
申请日：2012-05-03
Applicant: ADVANCED TECH MATERIALS , CHEN LI-MIN RAYMOND , COOPER EMANUEL I , BARNES JEFFREY A , LIU JUN , SUN LAISHENG , BAUM THOMAS , KORZENSKI MICHAEL , LOCHTENBERG BEN , DUBOIS LAWRENCE
Inventor： CHEN LI-MIN RAYMOND , COOPER EMANUEL I , BARNES JEFFREY A , LIU JUN , SUN LAISHENG , BAUM THOMAS , KORZENSKI MICHAEL , LOCHTENBERG BEN , DUBOIS LAWRENCE
IPC: H01L31/042 , H01L21/306 , H01L31/18
CPC classification number: H01L21/02052 , C11D3/042 , C11D3/046 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/267 , C11D7/3209 , C11D7/3245 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D11/0041 , C11D11/0047 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: Removal compositions and processes for removing at least one metal impurity from a substrate (e.g., a silicon-containing substrate) having same thereon. Advantageously, the compositions remove metal impurities, e.g., iron, from silicon-containing substrates used as semiconductor devices and solar cell devices.
Abstract translation: 去除组合物和从其上具有相同的基底（例如含硅基底）去除至少一种金属杂质的方法。 有利地，组合物从用作半导体器件和太阳能电池器件的含硅衬底中除去金属杂质，例如铁。
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2.发明申请AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT 审中-公开具有低铜蚀刻率的有机清洁解决方案有机残留物去除改进
公开(公告)号：WO2013173743A2
公开(公告)日：2013-11-21
申请号：PCT/US2013041634
申请日：2013-05-17
Applicant: ADVANCED TECH MATERIALS
Inventor： JENQ SHRANE NING , BOGGS KARL E , LIU JUN , THOMAS NICOLE
IPC: H01L21/302
CPC classification number: C11D11/0047 , C11D3/0073 , C11D7/08 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C25D5/48 , H01L21/02074
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.
Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种腐蚀抑制剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洗后CMP残留物和污染物质，同时与阻挡层相容。
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公开(公告)号：WO2008157345A2
公开(公告)日：2008-12-24
申请号：PCT/US2008066906
申请日：2008-06-13
Applicant: ADVANCED TECH MATERIALS , VISINTIN PAMELA , JIANG PING , KORZENSKI MICHAEL , KING MACKENZIE , HAN JIANWEN , HILGARTH MONICA , LIU JUN , ZHOU RENJIE , MINSEK DAVID
Inventor： VISINTIN PAMELA , JIANG PING , KORZENSKI MICHAEL , KING MACKENZIE , HAN JIANWEN , HILGARTH MONICA , LIU JUN , ZHOU RENJIE , MINSEK DAVID
CPC classification number: C11D11/0047 , C09K13/08 , C11D3/3947 , C11D3/3956 , C11D7/08 , C11D7/3209 , C11D7/3218 , C11D7/3281 , H01L21/02079 , H01L21/31111
Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition preferably includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. Processes include the monitoring and modifying said compositions.
Abstract translation: 去除组合物和从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物优选包含氢氟酸。 组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。 方法包括监测和修饰所述组合物。
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公开(公告)号：WO2010048139A3
公开(公告)日：2010-07-29
申请号：PCT/US2009061263
申请日：2009-10-20
Applicant: ADVANCED TECH MATERIALS , BARNES JEFFREY A , BENAC BRIAN , BOGGS KARL E , FENG LIN , LIU JUN , PETRUSKA MELISSA A , YAN XIAODONG , ZHANG PENG
Inventor： BARNES JEFFREY A , BENAC BRIAN , BOGGS KARL E , FENG LIN , LIU JUN , PETRUSKA MELISSA A , YAN XIAODONG , ZHANG PENG
IPC: C11D1/62
CPC classification number: C11D3/0073 , B08B3/08 , C11D1/72 , C11D3/042 , C11D3/2096 , C11D3/245 , C11D3/28 , C11D3/30 , C11D3/33 , C11D11/0047 , H01L21/02074
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Abstract translation: 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残留物和污染物。 清洁组合物包含新颖的腐蚀抑制剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。
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公开(公告)号：WO2009073596A3
公开(公告)日：2009-08-27
申请号：PCT/US2008085111
申请日：2008-12-01
Applicant: ADVANCED TECH MATERIALS , LIU JUN , ZHANG PENG
Inventor： LIU JUN , ZHANG PENG
Abstract: A removal composition and process for removing polymeric protective coating(s) from a microelectronic device having said coatings thereon. The removal composition removes the polymeric protective coating(s) from the device in a single step without substantially removing underlying layers.
Abstract translation: 一种用于从其上具有所述涂层的微电子器件去除聚合物保护涂层的去除组合物和方法。 去除组合物在单个步骤中从装置中除去聚合物保护涂层，而基本上不去除下面的层。
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Patent Agency Ranking6.发明申请ELECTROCHEMICAL DEPOSITION ANALYSIS SYSTEM INCLUDING HIGH-STABILITY ELECTRODE 审中-公开电化学沉积分析系统，包括高稳定性电极
公开(公告)号：WO2005100967A3
公开(公告)日：2006-08-03
申请号：PCT/US2005011268
申请日：2005-04-05
Applicant: ADVANCED TECH MATERIALS , LIU JUN , KING MACKENZIE
Inventor： LIU JUN , KING MACKENZIE
CPC classification number: G01N27/42
Abstract: A system and method for determining concentration of one or more components of interest in a copper electroplating solution, involving repetitive electroplating and stripping of copper, in which a ruthenium electrode is employed as a substrate for such electroplating and stripping steps. The concentration determination may be carried out by pulsed cyclic galvanostatic analysis (PCGA) or other methodology, to determine levels or accelerator and/or suppresser components of the plating bath chemistry.
Abstract translation: 一种用于确定铜电镀溶液中一种或多种感兴趣组分的浓度的系统和方法，包括铜的重复电镀和剥离，其中使用钌电极作为用于这种电镀和剥离步骤的基底。 浓度测定可以通过脉冲循环恒电分析（PCGA）或其他方法进行，以确定电镀液化学的水平或加速剂和/或抑制组分。
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7.发明申请PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION 审中-公开铜箔平面化学钝化机理抛光组合物
公开(公告)号：WO2004053008A2
公开(公告)日：2004-06-24
申请号：PCT/US0338047
申请日：2003-12-02
Applicant: ADVANCED TECH MATERIALS
Inventor： LIU JUN , WRSCHKA PETER , BERNHARD DAVID , KING MACKENZIE , DARSILLO MICHAEL , BOGGS KARL
CPC classification number: C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
Abstract translation: 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂组合。 这样的CMP组合物有利地没有BTA，并且可用于抛光半导体衬底上的铜元素的表面，即使在存在大量铜离子的情况下也不会发生抛光铜的凹陷或其它不利平面化缺陷，例如， Cu2 +，在CMP处理期间在铜/ CMP组成界面处的CMP组成中。
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8.发明申请METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES 审中-公开铜膜平面化方法的化学机械抛光组合物的处理方法
公开(公告)号：WO2006116770A3
公开(公告)日：2007-03-29
申请号：PCT/US2006016705
申请日：2006-04-28
Applicant: ADVANCED TECH MATERIALS , LIU JUN , KING MACKENZIE , DARSILLO MICHAEL , BOGGS KARL , ROEDER JEFFREY , WRSCHKA PETER , BAUM THOMAS H
Inventor： LIU JUN , KING MACKENZIE , DARSILLO MICHAEL , BOGGS KARL , ROEDER JEFFREY , WRSCHKA PETER , BAUM THOMAS H
IPC: H01L21/302 , H01L21/461
CPC classification number: C09G1/02 , H01L21/3212 , H01L21/7684
Abstract: A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
Abstract translation: 通过稀释钝化CMP组合物并确定稀释程度与铜的静态蚀刻速率之间的关系的方法。 这种关系可以用于在CMP抛光期间控制CMP组成，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中和在铜/ CMP处存在大量的铜离子 组合界面。
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公开(公告)号：AU2003297590A8
公开(公告)日：2004-06-30
申请号：AU2003297590
申请日：2003-12-02
Applicant: ADVANCED TECH MATERIALS
Inventor： WRSCHKA PETER , DARSILLO MICHAEL , KING MACKENZIE , LIU JUN , BERNHARD DAVID , BOGGS KARL
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公开(公告)号：AU2003297590A1
公开(公告)日：2004-06-30
申请号：AU2003297590
申请日：2003-12-02
Applicant: ADVANCED TECH MATERIALS
Inventor： KING MACKENZIE , DARSILLO MICHAEL , BOGGS KARL , LIU JUN , WRSCHKA PETER , BERNHARD DAVID
IPC: C09G1/02 , C23F3/00 , C23F3/06 , C23F11/14 , H01L21/321
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