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    SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS
    1.
    发明申请
    SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS 审中-公开
    用于输送含流体工艺材料组合的系统和方法

    公开(公告)号：WO2009076276A3

    公开(公告)日：2009-08-06

    申请号：PCT/US2008085826

    申请日：2008-12-08

    Applicant: ADVANCED TECH MATERIALS ,  HUGHES JOHN E Q ,  WARE DONALD D ,  LURCOTT STEVEN M ,  WRSCHKA PETER

    Inventor： HUGHES JOHN E Q ,  WARE DONALD D ,  LURCOTT STEVEN M ,  WRSCHKA PETER

    IPC: H01L21/304

    CPC classification number: H01L21/3212 ,  B24B57/02 ,  H01L21/6715 ,  Y10T137/2499 ,  Y10T137/4807 ,  Y10T137/8593

    Abstract: Common sources of different (e.g., concentrated) process materials are controllably supplied to multiple blending manifolds associated with multiple process tools, processing stations, or other points of use, to create an independently controllable process material blend for each tool, station, or point of use. Multi-constituent process materials may be circulated from a supply container through a blending manifold to a return container to ensure homogeneity until immediately prior to blending and use. Such containers may include liner- based containers adapted for pressure dispensation.

    Abstract translation: 不同（例如，浓缩的）工艺材料的常见来源可控制地提供给与多个工艺工具，加工站或其他使用点相关联的多个混合歧管，从而为每个工具，工位或点 使用。 多组分工艺材料可以从供应容器通过混合歧管循环到返回容器以确保均匀性，直到混合和使用之前。 这种容器可以包括适用于压力分配的基于内衬的容器。

    HIGH THROUGHPUT CHEMICAL MECHANICAL POLISHING COMPOSITION FOR METAL FILM PLANARIZATION
    4.
    发明申请
    HIGH THROUGHPUT CHEMICAL MECHANICAL POLISHING COMPOSITION FOR METAL FILM PLANARIZATION 审中-公开
    用于金属膜平面化的高通量化学机械抛光组合物

    公开(公告)号：WO2007019342A2

    公开(公告)日：2007-02-15

    申请号：PCT/US2006030508

    申请日：2006-08-07

    Applicant: ADVANCED TECH MATERIALS ,  BOGGS KARL ,  DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES

    Inventor： BOGGS KARL ,  DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES

    IPC: B24B29/02

    CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

    Abstract: A chemical mechanical polishing process including a single Step I CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

    Abstract translation: 化学机械抛光方法，其包括用于平坦化微电子器件结构的单一步骤I CMP浆料制剂，其优选在其上沉积有铜。 该方法包括使用具有氧化剂，钝化剂，研磨剂和溶剂的第一CMP浆料制剂以及使用包括第一CMP浆料配方的制剂对微电子器件结构进行软抛光和过度抛光的铜层的大量去除， 至少一种附加添加剂。 本文所述的CMP方法提供了高的铜去除速率，较低的屏障材料去除速率，适当的材料选择性范围，以使阻挡材料暴露开始时的铜凹陷最小化以及良好的平坦化效率。

    PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION
    6.
    发明申请
    PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION 审中-公开
    铜箔平面化学钝化机理抛光组合物

    公开(公告)号：WO2004053008A2

    公开(公告)日：2004-06-24

    申请号：PCT/US0338047

    申请日：2003-12-02

    Applicant: ADVANCED TECH MATERIALS

    Inventor： LIU JUN ,  WRSCHKA PETER ,  BERNHARD DAVID ,  KING MACKENZIE ,  DARSILLO MICHAEL ,  BOGGS KARL

    IPC: C09G1/02 ,  C23F3/00 ,  C23F3/06 ,  C23F11/14 ,  H01L21/321 ,  C09G

    CPC classification number: C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  C23F11/141 ,  H01L21/3212

    Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

    Abstract translation: 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂组合。 这样的CMP组合物有利地没有BTA，并且可用于抛光半导体衬底上的铜元素的表面，即使在存在大量铜离子的情况下也不会发生抛光铜的凹陷或其它不利平面化缺陷，例如， Cu2 +，在CMP处理期间在铜/ CMP组成界面处的CMP组成中。

    FLUID PROCESSING SYSTEMS AND METHODS
    9.
    发明专利
    FLUID PROCESSING SYSTEMS AND METHODS 未知

    公开(公告)号：SG176676A1

    公开(公告)日：2012-01-30

    申请号：SG2011089836

    申请日：2010-06-08

    Applicant: ADVANCED TECH MATERIALS

    Inventor： LURCOTT STEVEN M ,  HUGHES JOHN E Q ,  WRSCHKA PETER ,  BAUM THOMAS H ,  WARE DONALD D ,  ZOU PENG

    Abstract: Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel (220, 230) is subjected to filling by application of vacuum between the liner (224, 234) and overpack (222, 230). Multiple feed material flow controllers (321A-324A) of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materaisl supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.

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