SEMICONDUCTOR LASER
    1.
    发明专利

    公开(公告)号:JPH03278490A

    公开(公告)日:1991-12-10

    申请号:JP7841590

    申请日:1990-03-27

    Abstract: PURPOSE:To clarify the condition of the generation of a crossing mode in a twin stripped laser and further ensure bistability between the crossing mode by performing computer simulation and a theoretical analysis. CONSTITUTION:There are successively formed on a GaAs substrate 1 an n-GaAs 2, an n-Al0.35Ga0.65As 3, an Al0.05Ga0.95As active layer 4, a p-Al0.35Ga0.65As 5, a p-GaAs layer 6 and an SiN insulating layer 7. Then, metal layers 8, 9 each comprising Ni/AuGe/Ni and Cr/Au are provided on opposite sides of the substrate. Waveguides parallel to each other are formed at the lower part of parallel two electrodes 10, 11. When the cavity length L of a laser resonator is shorter than a coupling length Lc (in the two parallel waveguides, a length where light existent at one waveguide is transferred to the other) a bistable laser generating a crossing mode can be ensured.

Patent Agency Ranking