公开(公告)号：JPH11186535A

公开(公告)日：1999-07-09

申请号：JP34761297

申请日：1997-12-17

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SHIMIZU MITSUTOSHI ,  OGURA MUTSURO ,  KAJI RYOSAKU ,  NAKAGAWA ITARU ,  MUKAI SEIJI

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/86

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device capable of operating at a high speed with negative characteristics. SOLUTION: A main current path (a main electron path comprises a quantum wire 13, and an electron injection region 13E and an electron extracting region 13C are formed separately each other on the quantum wire 13 in its lengthwise direction. A multiple quantum barrier region 13M, selectively formed by an externally impressed field and not by metallurgically, is formed between these region. A control region or a region accelerating electron 13B is formed between the multiple quantum barrier region 13M and the electron injection region 13E. The respective electrodes, 15, 16, 18, and 17 are formed in respective regions 13E, 13B, 13M, and 13C via a thin barrier layer layer 14.