公开(公告)号：JPS6215407A

公开(公告)日：1987-01-23

申请号：JP15450485

申请日：1985-07-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO SUMINORI ,  OOTA KIMIHIRO ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  KOJIMA TAKESHI

IPC: G01B15/00 ,  G01B15/02 ,  G01N23/207

Abstract: PURPOSE:To make one period of an hourly variation of an intensity of a diffraction image correspond to a variation of a film thickness of a specified atomic layer, by making an electron beam incident from a specified direction of an Si substrate in the course of growth of a thin film crystal, and observing the hourly variation of the intensity of the diffraction image. CONSTITUTION:In the course of growth of a silicon thin film crystal, an electron beam 102 is made incident an bearing of a silicon substrate 100 on which a (001) surface for a crystal growth is a main surface. In this way, an hourly variation of an intensity of a diffraction image 103 of a reflected high speed electron beam diffracting method is observed. By this method, one period of the hourly variation can be made to correspond to a film thickness of two atomic layers. Also, when the hourly variation of the intensity of the diffraction image is observed by making the electron beam 102 incident on other direction than of the silicon substrate 100, for instance, , , , etc., one period of the variation can be made to correspond to a film thickness of one atomic layer.

公开(公告)号：JPS61227164A

公开(公告)日：1986-10-09

申请号：JP6813085

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: C23C14/30 ,  C23C14/54 ,  C30B23/08 ,  C30B29/68 ,  C30B33/00

Abstract: PURPOSE:To evaporate the extra-thin film layer on the surface of a solid material precisely and exactly by controlling the evaporation of the material on the surface of the solid material in synchronization with the change of the intensity of the reflected electron rays, etc., of the electron rays made incident on the solid material in order to evaporate said material. CONSTITUTION:The electron rays 3 are made incident from an electron gun 2 on the surface of a substrate 1 in a vacuum vessel 36 to evaporate the substrate 1. The intensity of the reflected, diffracted and scattered electron rays 4, 5, 6 generated on the surface of the substrate 1 in this stage is detected with a photodetector 11 provided with a fluorescent screen, an ammeter 25 provided with an electron multiplier 24, etc., or the absorbing current flowing in the substrate 1 is detected by an ammeter 23 and is inputted to a computer 13 via an A/D converter 12. The computer adjusts a light source 27, ion gun 30, electron gun 32, molecular ray generating cell 34, shutter 17, heater 20, etc., for the above-mentioned substrate 1 via a controller 14 in synchronization with the time change of the detected value thereby controlling precisely the evaporation of the material on the surface of the substrate 1.

公开(公告)号：JP2000058976A

公开(公告)日：2000-02-25

申请号：JP22708898

申请日：1998-08-11

Applicant: AGENCY IND SCIENCE TECHN

Inventor： CHO SHIKO ,  NAKAGAWA ITARU ,  ITAYA TARO ,  SUGAYA TAKEYOSHI ,  TORITSUKA KENJI

IPC: H01S3/08 ,  G02B5/08 ,  H01S5/00 ,  H01S5/30

Abstract: PROBLEM TO BE SOLVED: To manufacture a wide band semiconductor saturable absorption reflector having high reflectance by additionally providing a thin film of a dielectric substance transparent to light in a specified wavelength range and exhibiting refractive index lower than that of a semiconductor multiplayer film structure for the light in the specified wavelength range between a metal face and a semiconductor multilayer film structure. SOLUTION: A transparent substance 7 having different refractive index is arranged between the metallic reflective film 3 of a wide band semiconductor saturable absorption reflector and semiconductor layers 4, 5, 6 in order to enhance reflectance. The transparent substance 7 must be transparent over the entire wavelength range of optical spectrum in a pulse laser utilizing a wide band semiconductor saturable absorption reflector. In order to attaing a significant effect, refractive index of the transparent substance must be sufficiently lower than that of the semiconductor layers 4, 5, 6 and sufficiently higher than that of the metal. A substance having such a refractive index can be selected generally among so-called dielectrics.

公开(公告)号：JPH11186535A

公开(公告)日：1999-07-09

申请号：JP34761297

申请日：1997-12-17

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SHIMIZU MITSUTOSHI ,  OGURA MUTSURO ,  KAJI RYOSAKU ,  NAKAGAWA ITARU ,  MUKAI SEIJI

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/86

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device capable of operating at a high speed with negative characteristics. SOLUTION: A main current path (a main electron path comprises a quantum wire 13, and an electron injection region 13E and an electron extracting region 13C are formed separately each other on the quantum wire 13 in its lengthwise direction. A multiple quantum barrier region 13M, selectively formed by an externally impressed field and not by metallurgically, is formed between these region. A control region or a region accelerating electron 13B is formed between the multiple quantum barrier region 13M and the electron injection region 13E. The respective electrodes, 15, 16, 18, and 17 are formed in respective regions 13E, 13B, 13M, and 13C via a thin barrier layer layer 14.

公开(公告)号：JPS61225625A

公开(公告)日：1986-10-07

申请号：JP6813185

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: G01K11/00 ,  G01K11/30

Abstract: PURPOSE:To measure the surface temperature of solid material accurately with a better reproducibility, by detecting hourly changes in the intensity of electron reflected, diffracted or scattered on the surface of the solid material or the cycle of hourly changes in the absorption current flowing through the solid material. CONSTITUTION:An incident electron beam 11 from an electron gun 10 is reflected, diffracted or scattered on the surface of a substrate and the reflected electron beam and the diffracted electron beam obtained in a proper direction projects spot images on a fluorescent screen 12. These spot images are formed on an X-Y stage 14 with a camera or a lens 13 and one thereof is supplied to a photodetector 16 through an optical fiber 15 from the stage 14 to record the hourly changes in the output thereof by observing with a recorder 17. It is already discovered that the intensity of the specular spot in which the normal reflection highest in the intensity among those of the diffracted images is overlapped with the 0-order Laue point vibrates during the grow of crystal but the vibration thereof continues even after the growth is stopped. The relationship between the cycle of the vibration after the stoppage of the growth and the substrate temperature is memorized into a computer to be compared with the actually measured cycle, thereby enabling automatic measurement of temperature.

公开(公告)号：JPS61222986A

公开(公告)日：1986-10-03

申请号：JP16912584

申请日：1984-08-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  SAKAMOTO SUMINORI ,  NAKAGAWA ITARU ,  KAWAI NAOYUKI ,  KOJIMA TAKESHI

IPC: C30B29/40 ,  C30B23/00 ,  C30B23/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/66

Abstract: PURPOSE:To estimate the state of crystal growth and to control the titled thickness of film, by measuring change of intensity of diffraction pattern of reflection electron rays with time, corresponding a monoatomic layer. CONSTITUTION:The image of diffusion pattern of reflection electron rays of crystal on the substrate 1 formed on the screen 14 by the gun 12 of a diffusion device of reflection electron rays is made on the X-Y stage 18 by the camera lens 16, light at one point of the image is transferred to the receptor 19 by the fiber 17, its output signal is fed from the A-D converter 21 to the computer 22. On the other hand, the output signal of the receptor 19 is made to output to the recorder 20, and monitered. The shutter make-and-break drive control device 23 is operated by the order of the computer 22, so the shutters 8 of the material 3 required for crystal growth, the main shutter 9, the pulling voltage of the ion gun 4, regulation of gas flow rate, closing and opening, half opening, ON, OFF, etc. of electronic current flow of the electron gun 35 are controlled. Since one period of vibration of the diffusion pattern of reflection electron beam is correspondent to a monoatomic layer, the order of the growing layer can be estimated by the number of vibrations from biginning of crystal growth.

公开(公告)号：JPH08204226A

公开(公告)日：1996-08-09

申请号：JP808395

申请日：1995-01-23

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ITAYA TARO ,  MATSUMOTO KAZUHIKO ,  ISHII MASAMI ,  NAKAGAWA ITARU ,  SUGIYAMA YOSHINOBU

IPC: H01L31/108 ,  H01L31/0264

Abstract: PURPOSE: To obtain a light receiving element for detecting the incident light onto the surface of a light absorbing member interposed between a pair of voltage applying members formed on one surface of the light absorbing member in which high speed and high sensitivity are achieved by increasing the voltage applicable to the pair of voltage applying members. CONSTITUTION: A pair of voltage applying members 12, 12 are formed on one surface of a light absorbing member 11. An optical guide member 13 having width W shorter than the wavelength of incident light Ip and dielectric three- dimensional structure is formed on the surface of the light absorbing member 11 between the pair of voltage applying members 12, 12.

公开(公告)号：JPS62166564A

公开(公告)日：1987-07-23

申请号：JP958486

申请日：1986-01-20

Applicant: AGENCY IND SCIENCE TECHN

Inventor： NAKAGAWA ITARU ,  OOTA KIMIHIRO

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/20 ,  H01L29/76

Abstract: PURPOSE:To increase a current amplification factor of a semiconductor device by using a superlattice of a semiconductor as a base layer to suppress the scatter of hot electrons in the base in an HET, thereby reducing a base current and increasing a collector current. CONSTITUTION:A base layer 5 is formed in a superlattice structure obtained by alternately laminating a first semiconductor layer 9 and a second semiconductor layer 10. When an HET is composed of less types of materials, the semiconductor 10 is formed of the same material as a collector barrier 6, and the semiconductor 9 is formed of the same material as an emitter 2. A superlattice may be formed of a material different from a mixed crystal composition ratio of those of the barrier 6 or emitter 3. Thus, the scatter of hot electrons in the base of the HET can be suppressed to thereby reduce a base current and to increase a collector current and to increase a current amplification factor.

公开(公告)号：JPH08204225A

公开(公告)日：1996-08-09

申请号：JP808295

申请日：1995-01-23

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ITAYA TARO ,  MATSUMOTO KAZUHIKO ,  ISHII MASAMI ,  NAKAGAWA ITARU ,  SUGIYAMA YOSHINOBU

IPC: G02B6/122 ,  H01L31/02 ,  H01L31/108 ,  H01L33/04 ,  H01L33/00

Abstract: PURPOSE: To simplify the process by forming a protective insulation structure for protecting an optical window simultaneously with definition of the region of the optical window when an optical window of predetermined width is formed on one surface of a photoelectric conversion function part engaged with reception or emission of light and an optical element, requiring nontransmissive conductive thin film on the opposite sides thereof, is fabricated. CONSTITUTION: A nontransmissive conductive thin film 12 formed on one surface of a photoelectric conversion function section 11 is partially transformed to obtain a protective insulation structure 15 for optical window having predetermined width W. Consequently, an optical window 13 having defined region is formed on the surface of the photoelectric conversion function section 11 under the protective insulation structure 15 for optical window.

公开(公告)号：JPH08146066A

公开(公告)日：1996-06-07

申请号：JP29188494

申请日：1994-11-28

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ITAYA TARO ,  NAKAGAWA ITARU ,  SUGIYAMA YOSHINOBU ,  OTA KIMIHIRO

IPC: G01R15/24 ,  G01J4/00 ,  G01R19/00 ,  G01R29/12 ,  G01R29/14 ,  G01R31/302

Abstract: PURPOSE: To accurately measure a plurality of vector components of electric field vector on an electrical circuit with a high time resolution and a device therefor. CONSTITUTION: The measuring device consists of a laser, an optical element, an electrooptical crystal, a photoelectric conversion element, and an electrical circuit. An electrooptical crystal 43 with the change of refractive index in optical main axis direction due to electric field and the change in optical main axis direction selected and is arranged in an electric field generated by an electrical circuit 44 to be measured. Laser beams are applied to an electrooptical crystal and reflection light through the crystal is decomposed into two polarization directions and the is photoelectrically transduced by photoelectric transducing elements 52 and 53. By enabling the differential signal of electrical output to be a measurement signal and selecting two polarization directions of laser beams by a half-wavelength plate 46 which is an optical element, two signals corresponding to the change of refractive index of crystal and the change in optical main axis direction can be obtained and the two components of electric field vector can be obtained from the primacy combination of two signals, thus measuring the electric field components in a plurality of directions without deteriorating the reproducibility and accuracy of measurement and without mechanically moving the electrooptical crystal.