公开(公告)号：JPH11241161A

公开(公告)日：1999-09-07

申请号：JP6231598

申请日：1998-02-25

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KIN TAIRA ,  TANEMURA SAKAE

IPC: C01F17/00 ,  C23C14/06 ,  C23C14/34

Abstract: PROBLEM TO BE SOLVED: To obtain a thin film small in impurities, having a dense structure and showing good piezochromic characteristics by simultaneously sputtering a target of samarium sulfide in which the ratio of an samarium element to a sulfur element is higher than the specified value and a target of a samarium metal. SOLUTION: A target of samarium sulfide in which the ratio of a sulfur element to a samarium element is higher than 1 and a target of a samarium metal are simultaneously sputtered, and by a reactive sputtering method, a samarium monosulfide thin film is produced. Alternatively, a disamarium trisulfide compd. target and a samarium metal target are simultaneously sputtered. Alternatively, a mixed target of a mixture obtd. by blending a disamarium trisulfide compd. and the powder of a samarium metal in a prescribed ratio is sputtered. The formed samarium monosulfide thin film is a semiconductor layer and a metallic phase stable under the atmospheric pressure. In this way, the thin film can be produced without using a sulfide poisonous gas.

公开(公告)号：JPH08144068A

公开(公告)日：1996-06-04

申请号：JP30702994

申请日：1994-11-16

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KIN TAIRA ,  TANEMURA SAKAE

IPC: F25B23/00 ,  B32B7/02 ,  B32B9/00 ,  C23C14/08 ,  C23C28/04 ,  C23C30/00 ,  G02B5/28

Abstract: PURPOSE: To obtain a temperature stabilized selective radiation material using upper air or cosmic space as a cryogenic source by forming a vanadium dioxide film to which tungsten is added on a black substrate and forming a silicon monoxide film thereon. CONSTITUTION: This selective radiation material is formed by providing the vanadium dioxide film 2 to which tungsten is added on the upper surface of the black substrate 1 made of an aluminum coated with a black paint and forming the silicon monoxide film 3 thereon. The thickness of the film 2 is about 0.1μm, the thickness of the film 3 is about 1μm and the thickness of the substrate 1 is not restricted if not transmissive to infrared rays. The selective radiation material is mitigated in sensitive film thickness dependency and attains a fixed stable temp. lowering.

公开(公告)号：JP2001335917A

公开(公告)日：2001-12-07

申请号：JP2000161877

申请日：2000-05-31

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KIN TAIRA

IPC: C04B41/87 ,  C04B41/89 ,  C23C14/08 ,  C23C14/34 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a new method for producing a crystalline alumina thin film at a low temperature by a sputtering method. SOLUTION: This invention is a method for producing an alumina crystalline thin film at low temperature, in which a chromium oxide crystalline thin film is previously deposited on a substrate or a base material by a sputtering method, and then, an alumina thin film is deposited thereon and particularly is the method for producing an alumina thin film of an α phase most stable and also most excellent in characteristics among alumina crystalline phases at low temperature. An alumina crystalline thin film, particularly, the alumina thin film of an α phase can be deposited at a temperature lower than that in the conventional method. By the lowering of the temperature of the deposition temperature, the kinds of substrates and base materials to be selected are remarkably made widen, and application to the industrial field such as the provision of alumina hard coatings with wear resistance and protection in the machine industry, the semiconductor industry or the like as purposes or inexpensive alumina substrates of high quality can be expected.

公开(公告)号：JPH083546A

公开(公告)日：1996-01-09

申请号：JP16618294

申请日：1994-06-24

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KIN TAIRA ,  TANEMURA SAKAE

IPC: G02F1/17 ,  C09K9/00 ,  C23C14/34

Abstract: PURPOSE:To provide the method for producing the thermochromic material capable of automatically controlling a solar energy transmittance, am IR rays transmittance, etc., in response to an environmental temperature, because a transition temperature can freely set in a range of -38 to 67 deg.C. CONSTITUTION:The method for producing the thermochromic material comprises subjecting a vanadium target and a molybdenum target to a reactive two-dimensional simultaneous spattering treatment. The method for producing the thermochromic material comprises subjecting a vanadium molybdenum alloy target containing 0.06-10 atom % of molybdenum to a reactive spattering treatment. The material is utilized for uses requiring the automatic control of an infrared light transmittance in response to the change of temperature in addition to the coating of building window glass, automotive window glass and green house window glass.

公开(公告)号：JPH11152585A

公开(公告)日：1999-06-08

申请号：JP33368697

申请日：1997-11-17

Applicant: AGENCY IND SCIENCE TECHN

Inventor： TAZAWA MASATO ,  KIN TAIRA ,  TANEMURA SAKAE

IPC: C23C30/00

Abstract: PROBLEM TO BE SOLVED: To provide a automatic temp. stabilizing method utilizing cooling by radiation and to provide equipment such as a thermostatic chamber or the like utilizing this method. SOLUTION: This is a method in which a cooling device stationarily exhausting a selective radiating material and heat is set to equipment such as a thermostatic chamber or the like, and by this means, a certain temp. is automatically obtd. As the selective radiating material, a material obtd. by forming vanadium dioxide coating added with tungsten on a black substrate and furthermore forming silicon monoxide on the coating is used, the phase transition temp. of a thermochromic material used in the material is set to a prescribed temp., also, heat is stationarily exhausted by the cooling device, and by using a radiation cooling phenomenon by the selective radiating material, a certain temp. is automatically obtd. The equipment such as a thermostatic chamber or the like utilizes this method.

公开(公告)号：JPH07331430A

公开(公告)日：1995-12-19

申请号：JP15055094

申请日：1994-06-08

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KIN TAIRA ,  TANEMURA SAKAE

IPC: G02F1/17 ,  C03C17/245 ,  C09K9/00 ,  C23C14/34

Abstract: PURPOSE:To obtain a thermochromic material whose optical characteristics vary automatically and reversibly in accordance with the environmental temp. by forming a W-contg. thin VO2 film by a reactive binary simultaneous sputtering method or other method. CONSTITUTION:A substrate of glass, etc., is put in the reaction chamber of a reactive magnetron sputtering device, the chamber is filled with an O2-contg. gaseous Ar atmosphere and reactive binary simultaneous sputtering is carried out using V and W targets under the conditions of 250-500 deg.C temp. of the substrate and 0.5-5Pa total sputtering pressure or reactive sputtering is carried out using a V-W alloy target contg. 0.04-10 atomic % W. During the reactive binary simultaneous sputtering, the relation of 0