-
公开(公告)号：JPH11152585A
公开(公告)日：1999-06-08
申请号：JP33368697
申请日：1997-11-17
Applicant: AGENCY IND SCIENCE TECHN
Inventor： TAZAWA MASATO , KIN TAIRA , TANEMURA SAKAE
IPC: C23C30/00
Abstract: PROBLEM TO BE SOLVED: To provide a automatic temp. stabilizing method utilizing cooling by radiation and to provide equipment such as a thermostatic chamber or the like utilizing this method. SOLUTION: This is a method in which a cooling device stationarily exhausting a selective radiating material and heat is set to equipment such as a thermostatic chamber or the like, and by this means, a certain temp. is automatically obtd. As the selective radiating material, a material obtd. by forming vanadium dioxide coating added with tungsten on a black substrate and furthermore forming silicon monoxide on the coating is used, the phase transition temp. of a thermochromic material used in the material is set to a prescribed temp., also, heat is stationarily exhausted by the cooling device, and by using a radiation cooling phenomenon by the selective radiating material, a certain temp. is automatically obtd. The equipment such as a thermostatic chamber or the like utilizes this method.
-
公开(公告)号：JPH10152322A
公开(公告)日：1998-06-09
申请号：JP32604796
申请日：1996-11-20
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MURAKAMI JUNICHI , OI YUTAKA , YOSHIMURA KAZUNORI , IGARASHI KAZUO , TANEMURA SAKAE , GOTO MASAHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a method of formation of θ-alumina particles which has large surface areas and is useful as a carrier of metal catalyst, and a catalyst carrier. SOLUTION: This method of formation of θ-alumina particles of 5-200nm diameter comprises spattering metal aluminum powder by electric discharge in argon gas, feeding the aluminum into a gaseous mixture of helium and water to form fine θ-alumina particles by coagulation while controlling the particle size by growing the particles by using metal tubes or reducing particle size by cooling with liquid nitrogen, and depositing the particles on a substrate, thus producing alumina particles of 20nm or less size which has a large surface area and is useful as a carrier of metal catalysts.
-
公开(公告)号：JPH07331430A
公开(公告)日：1995-12-19
申请号：JP15055094
申请日：1994-06-08
Applicant: AGENCY IND SCIENCE TECHN
Inventor： KIN TAIRA , TANEMURA SAKAE
IPC: G02F1/17 , C03C17/245 , C09K9/00 , C23C14/34
Abstract: PURPOSE:To obtain a thermochromic material whose optical characteristics vary automatically and reversibly in accordance with the environmental temp. by forming a W-contg. thin VO2 film by a reactive binary simultaneous sputtering method or other method. CONSTITUTION:A substrate of glass, etc., is put in the reaction chamber of a reactive magnetron sputtering device, the chamber is filled with an O2-contg. gaseous Ar atmosphere and reactive binary simultaneous sputtering is carried out using V and W targets under the conditions of 250-500 deg.C temp. of the substrate and 0.5-5Pa total sputtering pressure or reactive sputtering is carried out using a V-W alloy target contg. 0.04-10 atomic % W. During the reactive binary simultaneous sputtering, the relation of 0
-
公开(公告)号：JPH11322370A
公开(公告)日：1999-11-24
申请号：JP14651598
申请日：1998-05-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： TAZAWA MASATO , TANEMURA SAKAE
Abstract: PROBLEM TO BE SOLVED: To obtain a heat radiation wavelength selection type heat radiating material as a heat radiation source used for heater and heating of room by heat radiation. SOLUTION: This heat radiation material is used for heating human bodies by heat radiation from a heater such as stove and the material is obtained by forming a silicon monoxide film onto a metal substrate and selectively reduces absorption of infrared light by air or this heat radiation material is used for heating of room by heat radiation in drying process of products in plants or farms and the material is obtained by forming a silicon monoxide film onto a metal substrate and selectively reduces absorption of infrared light by air.
-
公开(公告)号：JPH083546A
公开(公告)日：1996-01-09
申请号：JP16618294
申请日：1994-06-24
Applicant: AGENCY IND SCIENCE TECHN
Inventor： KIN TAIRA , TANEMURA SAKAE
Abstract: PURPOSE:To provide the method for producing the thermochromic material capable of automatically controlling a solar energy transmittance, am IR rays transmittance, etc., in response to an environmental temperature, because a transition temperature can freely set in a range of -38 to 67 deg.C. CONSTITUTION:The method for producing the thermochromic material comprises subjecting a vanadium target and a molybdenum target to a reactive two-dimensional simultaneous spattering treatment. The method for producing the thermochromic material comprises subjecting a vanadium molybdenum alloy target containing 0.06-10 atom % of molybdenum to a reactive spattering treatment. The material is utilized for uses requiring the automatic control of an infrared light transmittance in response to the change of temperature in addition to the coating of building window glass, automotive window glass and green house window glass.
-
Patent Agency Ranking
公开(公告)号：JPH07258867A
公开(公告)日：1995-10-09
申请号：JP7448694
申请日：1994-03-18
Applicant: AGENCY IND SCIENCE TECHN
Inventor： TAZAWA MASATO , TANEMURA SAKAE
IPC: C23C28/04
Abstract: PURPOSE:To obtain a selective radiation material for radiation cooling having a uniform film thickness and large area by forming a film mixture composed of silicon monoxide and air atop the silicon monoxide film formed on a metallic substrate. CONSTITUTION:The silicon monoxide film 2 is formed on the metallic substrate 1 and further, the film mixture 3 composed of the silicon monoxide and the air is formed atop this film Further, a second film mixture having a higher ratio than the ratio of the air may be formed atop the film mixture 3. The film thicknesses of these films 2, 3 are specified to, for example, about 0.5mum and a combination ratio of the silicon monoxide and air of the film mixture 3 is specified to about 1:1. As a result, the selective radiation material for radiation cooling having the large area and high performance with the high upper air or cosmic space as a cold source is obtd.
-
公开(公告)号：JPH10256528A
公开(公告)日：1998-09-25
申请号：JP7460497
申请日：1997-03-10
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MURAKAMI JUNICHI , OI YUTAKA , YOSHIMURA KAZUNORI , IGARASHI KAZUO , TANEMURA SAKAE , GOTO MASAHIRO
IPC: B22F9/02 , B22F1/02 , B22F9/14 , C23C14/00 , C23C14/35 , C30B23/00 , H01L21/285 , H01L29/06 , H01L29/66
Abstract: PROBLEM TO BE SOLVED: To provide a method for generating layer aluminum fine particles and an application to a single electron tunneling quantum device. SOLUTION: Metal aluminum is supplied into mixed gas of helium and steam of 1×10 to 3×10 Torr by sputtering metal aluminum by discharging argon gas, aggregation is generated, then discharged into vacuum to generate single crystal covered on a surface layer with aluminum, thereby forming spherical metal aluminum fine particles (layered aluminum fine particles). The particles are carried on a flow of the helium gas, discharged into vacuum via an aperture, and deposited directly on a board to generate layered aluminum particles of a particle size of 5 to 500nm. The vicinity of an outlet of particle generation source is cooled by the nitrogen or a distance between an aluminum target and the aperture is set to 30 to 50mm, thereby generating the layered aluminum fine particles. Further, single electron tunneling quantum device element using the layered aluminum fine particles obtained by the method is set.
-
公开(公告)号：JPH10148850A
公开(公告)日：1998-06-02
申请号：JP32099796
申请日：1996-11-15
Applicant: AGENCY IND SCIENCE TECHN
Inventor： YOSHIMURA KAZUNORI , MIKI TAKESHI , TANEMURA SAKAE
Abstract: PROBLEM TO BE SOLVED: To provide a thin film showing large changes in transmittance during coloring and decolorizing and having high coloring efficiency by sputtering while controlling the flow amt. of argon gas into a sputtering system to a specified range. SOLUTION: After a sputtering chamber 2 is evacuated by a vacuum pump 14, argon is introduced into the sputtering chamber 2 at 120 to 230sccm flow rate by a mass flow controller 16 and oxygen gas is introduced generally by 5 to 20sccm to perform DC magnetron sputtering. Thereby, titanium atoms sputtered from a target 8 is oxidized to produce titanium oxide by the oxygen gas introduced into the sputtering chamber 2, and the oxide is deposited to form at titanium oxide thin film of specified thickness on the surface of a substrate 10 facing the target. Thereby, the obtd. film shows large changes in the transmittance during coloring and decolorizing and gives high coloring efficiency.
-
公开(公告)号：JPH11354821A
公开(公告)日：1999-12-24
申请号：JP17659198
申请日：1998-06-09
Applicant: AGENCY IND SCIENCE TECHN
Inventor： TAZAWA MASATO , TANEMURA SAKAE
IPC: H01L31/04
Abstract: PROBLEM TO BE SOLVED: To provide a method of confining light in a ceramic substrate type solar cell. SOLUTION: This method of confining light in an Si layer of an alumina ceramic substrate type Si solar cell is characterized by insertion of a film thickness-controlled Si nitride film 2 or this film 2 and Si oxide film in the interface of an alumina ceramic substrate 3 and Si 1. The energy conversion efficiency can be improved by confining light in the Si layer and the Si material consumption can be reduced by reducing the Si layer thickness.
-
公开(公告)号：JPH11241161A
公开(公告)日：1999-09-07
申请号：JP6231598
申请日：1998-02-25
Applicant: AGENCY IND SCIENCE TECHN
Inventor： KIN TAIRA , TANEMURA SAKAE
Abstract: PROBLEM TO BE SOLVED: To obtain a thin film small in impurities, having a dense structure and showing good piezochromic characteristics by simultaneously sputtering a target of samarium sulfide in which the ratio of an samarium element to a sulfur element is higher than the specified value and a target of a samarium metal. SOLUTION: A target of samarium sulfide in which the ratio of a sulfur element to a samarium element is higher than 1 and a target of a samarium metal are simultaneously sputtered, and by a reactive sputtering method, a samarium monosulfide thin film is produced. Alternatively, a disamarium trisulfide compd. target and a samarium metal target are simultaneously sputtered. Alternatively, a mixed target of a mixture obtd. by blending a disamarium trisulfide compd. and the powder of a samarium metal in a prescribed ratio is sputtered. The formed samarium monosulfide thin film is a semiconductor layer and a metallic phase stable under the atmospheric pressure. In this way, the thin film can be produced without using a sulfide poisonous gas.
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.024 seconds)
