公开(公告)号：JPH0555551A

公开(公告)日：1993-03-05

申请号：JP23873991

申请日：1991-08-26

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MATSUMOTO KAZUHIKO ,  HAYASHI YUTAKA ,  ISHII MASAMI ,  SAKAMOTO KUNIHIRO ,  MOROZUMI HIDEHIRO

IPC: H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

Abstract: PURPOSE:To improve the characteristics of a transistor, especially the base resistance, the Early effect, the punch-through voltage and the frequency characteristic by allowing to rapidly increasing the rate of induced charge of the base in a transistor charge induced in a storage layer of the semiconductor surface. CONSTITUTION:When a 15a negative bias is impressed on an n GaAs emitter, holes of majority carriers are stored on an the interface between a p-GaAs collector 55a in which majority carriers are depleted during the unbiased time, and a GaAlAs/AlAs barrier 25a acting as a barrier to the majority carriers (holes) of the p GaAs collector 55a because of wider gap than that of the p GaAs collector 55a, so as to act as a base. Induced charge is a storage layer 35, so that a large amount of holes can be induced by a low emitter.base voltage.