公开(公告)号：US3880675A

公开(公告)日：1975-04-29

申请号：US28977772

申请日：1972-09-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： TARUI YASUO ,  KOMIYA YOSHIO ,  TESHIMA HIROO

IPC: H01L21/8224 ,  H01L21/00 ,  H01L21/331 ,  H01L23/29 ,  H01L27/00 ,  H01L27/082 ,  H01L29/00 ,  H01L29/73 ,  H01L21/22

CPC classification number: H01L27/00 ,  H01L21/00 ,  H01L23/291 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabrication of a lateral transistor is disclosed, which comprises the step of diffusing base impurity by means of the RED method from the same masking hole determining an emitter region on a substrate which includes the emitter region and a collector region on the crystalline main plane thereof.

Abstract translation: 公开了一种用于制造横向晶体管的方法，其包括通过RED方法从相同的掩蔽孔扩散基底杂质的步骤，所述掩蔽孔确定了在晶体主体上包括发射极区域和集电极区域的衬底上的发射极区域 它的平面。