公开(公告)号：US3860916A

公开(公告)日：1975-01-14

申请号：US34635973

申请日：1973-03-30

Applicant: AGENCY IND SCIENCE TECHN

Inventor： TARUI YASUO ,  KOMIYA YOSHIO ,  SAKAMOTO TSUNENORI

IPC: G11C11/42 ,  G02F1/015 ,  G11B7/00 ,  G11B7/30 ,  G11C11/23 ,  G11C13/04 ,  G11C27/00 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/146 ,  H01L29/788 ,  H01L29/792 ,  H04N7/00

CPC classification number: H04N7/005 ,  G11C13/048 ,  G11C27/005 ,  H01L27/14643

Abstract: Disclosed is an optical information storage device using a composite structure of Conductor-Insulator-Semiconductor. A large number of such devices when combined to form a matrix array, will provide an optical pattern memory to permit an optical pattern to be directly stored and to be retrieved either in visible form or in analogue output signal form.

Abstract translation: 公开了使用导体 - 绝缘体半导体的复合结构的光学信息存储装置。 当组合以形成矩阵阵列时，大量这样的设备将提供光学图案存储器，以允许光学图案被直接存储并且以可见形式或以模拟输出信号形式被检索。

公开(公告)号：US3880675A

公开(公告)日：1975-04-29

申请号：US28977772

申请日：1972-09-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： TARUI YASUO ,  KOMIYA YOSHIO ,  TESHIMA HIROO

IPC: H01L21/8224 ,  H01L21/00 ,  H01L21/331 ,  H01L23/29 ,  H01L27/00 ,  H01L27/082 ,  H01L29/00 ,  H01L29/73 ,  H01L21/22

CPC classification number: H01L27/00 ,  H01L21/00 ,  H01L23/291 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabrication of a lateral transistor is disclosed, which comprises the step of diffusing base impurity by means of the RED method from the same masking hole determining an emitter region on a substrate which includes the emitter region and a collector region on the crystalline main plane thereof.

Abstract translation: 公开了一种用于制造横向晶体管的方法，其包括通过RED方法从相同的掩蔽孔扩散基底杂质的步骤，所述掩蔽孔确定了在晶体主体上包括发射极区域和集电极区域的衬底上的发射极区域 它的平面。

公开(公告)号：JPH05175176A

公开(公告)日：1993-07-13

申请号：JP14671292

申请日：1992-05-12

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KOMIYA YOSHIO

IPC: H01L21/30 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To provide a more efficient method which can cope with various kinds of processes at the time of directly plotting a pattern on a substrate with an electron beam. CONSTITUTION:A substrate 12 set in a reaction chamber 16 is irradiated with an electron beam 11 containing pattern information. At the same time, the substrate 12 is irradiated with an light energy beam 24a in a direction oblique to the irradiating direction of the electron beam 11 by means of optical means 25, 26, 27, 28, and 29. A substance change takes place only at the part corresponding to the pattern information on the substrate 12 due to the reaction between the beams 11 and 24a.

公开(公告)号：JPH02368A

公开(公告)日：1990-01-05

申请号：JP11097889

申请日：1989-04-28

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KOMIYA YOSHIO

IPC: H01L39/22 ,  G02B6/12 ,  G02F1/015 ,  H01L27/15 ,  H01L29/161 ,  H01L29/78

Abstract: PURPOSE:To realize a non-linear potential distribution section having complicated construction and still desirable design properties, by providing non-linear potential distribution at least in a part of a gate region in the direction parallel with the surface of a semiconductor region in said part of the gate region. CONSTITUTION:A non-linear potential distribution device is provided at least in a part of a gate region 64, the non-linear potential distribution device consisting of a JJ series array and electrodes M1-M4 capable of providing non-linear potential distribution in the direction parallel with the surface of a semiconductor region in said part of the gate region. In order to apply a voltage to the gate region 64, the first electrode M1 present on the source side and the second electrode M4 on the drain side are used. A voltage applied to the electrode M4 is regulated and it is determined whether zero or certain voltage is made present at a Josephson junction element JJ by a small voltage applied to the electrode M1 when the electrode M4 is at a predetermined voltage. If the electrode M1 is located outside the end of the source, a potential having tendency of increasing gradually from left to right can be regulated freely at the source end point. Accordingly. the channel can be opened or closed as desired.

公开(公告)号：JPH05129245A

公开(公告)日：1993-05-25

申请号：JP10218992

申请日：1992-03-27

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KOMIYA YOSHIO ,  KOMURO MASANORI

IPC: H01L21/268 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To put forward a technique which enables more efficient various processes when a pattern is directly drawn on a substrate using an ion beam. CONSTITUTION:An ion beam 1 with a pattern data is irradiated substantially at right angle to a substrate 3 housed in a reacting chamber 7. At the same time, a light energy beam 13 is irradiated through optical means 14, 15, 16, 17 and 18 to the substrate at an inclination relative to the direction of irradiation of the ion beam. Only areas corresponding to the pattern data are subject to variations of substance resulting from a reaction effect between the ion beam 1 and the light energy beam 13.