Abstract:
PROBLEM TO BE SOLVED: To enable making temperature coefficient of resistance(TCR) approach zero over a wide temperature range. SOLUTION: A resistance member is formed of a Ni-Cr based alloy, which contains one or at least two elements selected from among a group of Al, Si, Be, Mg, Ti and Mn and one or at least two elements selected from among a group of Mn, Fe, Co, Ti and V. In a resistance material, resistance value change rate of base metal is approximated by a quadratic formula for the temperature change, a primary element contributing to a primary coefficient αand a secondary element contributing to a secondary coefficient β are found. Doping quantity of the primary element and the secondary element are so decided that the coefficients α, β fall within prescribed ranges.
Abstract:
PROBLEM TO BE SOLVED: To improve a resistor provided with a resistive laminate, composed of a plurality of resistors laminated on the surface of an insulating board to be improved in long-term stability, by reducing its temperature coefficient of resistance TCR to zero over a wide range of temperature. SOLUTION: When the rote of change of a resistance with temperature [Δt] for eaching resistor layer of the resistive laminate is approximated by the quadratic formula, [αΔt+β(Δt)2], or the formula of higher order, at least the signs of the linear temperature coefficient α and quadratic temperature coefficient β of a certain resistor layer are set opposite to those of the other resistor layer. A resistor layer of superior long-term reliability, how ever, is used as the uppermost layer of the resistive laminate. At least, α and β may be both set positive for one of the resistor layers, and α and β be both set negative for the other of the resistor layers. At least, one of the resistor layers may be formed of Ni-Cr alloy.
Abstract:
PROBLEM TO BE SOLVED: To solve the problem of the impedance mismatch due to inductances induced at connections and resistors and exactly set a DC resistance value. SOLUTION: The high-frequency termination resistor (R) comprises a filmy resistor (4) provided on a dielectric board (1), a signal electrode (2) and a grounding electrode (3) at one and the other ends of the resistor (4), respectively, and a conductor film (5) formed on the same surface as the resistor (4). The film (5) is connected to any of the signal electrode (2), the resistor (4) and the grounding electrode (3) and has no influence on the DC resistance value. The resistor (R) is fixed to a high-frequency circuit board, the signal electrode (2) and the grounding electrode (3) are connected to the terminal end of a high-frequency signal transmission line (7) on the high-frequency circuit board and a ground surface (8), respectively, and then the conductor film (5) is trimmed to obtain the desired return loss frequency characteristics. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To simplify structure and manufacturing process and increase stability in a thin-film resistor, wherein a resistance thin film is formed on the surface of an insulating substrate. SOLUTION: A resistive thin film is formed of resistance material, wherein at least a predetermined quantity of Al is added to Ni-Cr alloy. Al contained in the resistance material is subjected to auto-oxidation, and an aluminum oxide film 14 is formed on the surface of a resistance thin film 12. When a resistance pattern is formed on the resistance thin film 12, it is preferable that the aluminum oxide film 14 be formed on the surface of the resistance pattern after formation and the side surface of the pattern. For the resistive thin film 12 used is, it is preferable that at% for Ni/Cr be 83/17 to 60/40, Doping quantity of Al be at least 3 at%, and other elements may be included for characteristics adjustment.
Abstract:
PROBLEM TO BE SOLVED: To give a resistance higher than before when the overall dimensions are identical. SOLUTION: In the chip resistor where a filmlike resistor 2 is formed on the insulating surface of a substrate 1 and coated with a protective film 5 and an external electrode layer 6 is formed at the opposite ends of the substrate 1, the resistor film 2 is extended below the external electrode layer 6 while sandwiching an insulator film 4 between the resistor film 2 and the external electrode layer 6. Opposing face of the resistor film 2 and the external electrode layer 6 is lacking partially from the insulator film 4 and the lacking portion can serve as a portion for connecting the external electrode layer 6 and the resistor film 2 electrically (i. e. an internal electrode). The portion becoming the internal electrode may be not longer than one half of the short side of the substrate 1 where the external electrode layer 6 is formed. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a high-resistance thin-film resistor having both of high resistivity and a fine resistance temperature coefficient for realizing a resistance element having a high resistance value, or a resistance element having a short resistance line and being suited to a high-frequency transmission system. SOLUTION: The high resistance thin-film resistor consists of a thin film, obtained by adding nitrogen and indium or indium oxide to zinc oxide. A sputtering target obtained, by mixing indium oxide of 5 to 15 wt% with zinc oxide is used for manufacturing the resistor, and a thin film is deposited on a substrate, by performing sputtering in atmosphere containing nitrogen of 30% or higher to argon gas. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a chip resistor having a high resistance by forming a thin resistor film without losing stability, and to provide its manufacturing process. SOLUTION: In the chip resistor 10 where a filmlike resistor 14 is formed on the insulating surface of a substrate 12 and coated with a protective layer 16 and an external electrode 18 is provided, arithmetic average roughness Ra on the surface of the substrate 12 for forming the resistor film 14 is set at 0.02 μm or less. The chip resistor is manufactured by (a) preparing a substrate 12 having arithmetic average roughness Ra on the surface set at 0.02 μm or less, (b) forming a filmlike resistor film 14 on the surface of the substrate, (c) forming a resistor pattern by etching the resistor film 14 by photolithography method, (d) coating the resistor film 14 with a protective layer 16, and (e) providing an external electrode 18. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To improve accuracy and to stabilize characteristics by preventing shock or stresses from being added to a substrate, etc., inside of a resistor from a plate-like lead adheringly fixed to an insulated substrate in a surface mounted metal foil resistor obtained by forming a resistor pattern at a metal foil resistor which adhered to one side face of the insulated substrate and is resin-encapsulated. SOLUTION: This resistor is provided with plural plate-like leads 20 adhered to the other side face of a substrate and projecting outward from the side edge of the substrate, a bonding wire connecting a resistor pattern to the leads 20 and encapsulating resin for sealing the substrate and the bonding wire. Each of the plate-like leads is provided with a small hole near a position crossing a boundary with the outer peripheral surface of the sealing resin, and the leads 20 are folded at the positions of these small holes. The small hole formed at each lead 20 is desirably a long hole 26, which is long in the longitudinal direction of the lead 20.