公开(公告)号：WO1995004021A1

公开(公告)日：1995-02-09

申请号：PCT/US1994008524

申请日：1994-07-28

Applicant: ALLIEDSIGNAL INC.

Inventor： ALLIEDSIGNAL INC. ,  VAN DER PUY, Michael ,  MADHAVAN, G., V., Bindu ,  DEMMIN, Timothy, R.

IPC: C07C17/20

CPC classification number: C07C17/278 ,  C07C17/206 ,  C07C17/23 ,  C07C19/10 ,  C07C19/08 ,  C07C19/01

Abstract: The invention relates to a process for preparing hydrofluorocarbons of the formulas CF3(CH2CF2)nF comprising reacting at least one reactant selected from CCl3(CH2CCl2)nCl, CCl3(CH2CF2)nCl or CCl2[(CH2CF2)Cl]2, where n=1 to 3, with hydrogen fluoride at a temperature of from about 25 to about 200 DEG C.

Abstract translation: 本发明涉及一种制备式CF 3（CH 2 CF 2）nF的氢氟烃的方法，包括使至少一种选自CCl 3（CH 2 Cl 2）nCl，CCl 3（CH 2 CF 2）nCl或CCl 2 [（CH 2 CF 2）Cl] 2的反应物反应，其中n = 至3，氟化氢的温度为约25至约200℃

公开(公告)号：EP0711266A1

公开(公告)日：1996-05-15

申请号：EP94924047.0

申请日：1994-07-28

Applicant: AlliedSignal Inc.

Inventor： VAN DER PUY, Michael ,  MADHAVAN, G., V., Bindu ,  DEMMIN, Timothy, R.

IPC: B01J27 ,  C07B61 ,  C07C17 ,  C07C19

CPC classification number: C07C17/278 ,  C07C17/206 ,  C07C17/23 ,  C07C19/10 ,  C07C19/08 ,  C07C19/01

Abstract: The invention relates to a process for preparing hydrofluorocarbons of the formulas CF3(CH2CF2)nF comprising reacting at least one reactant selected from CCl3(CH2CCl2)nCl, CCl3(CH2CF2)nCl or CCl2[(CH2CF2)Cl]2, where n=1 to 3, with hydrogen fluoride at a temperature of from about 25 to about 200 °C.

公开(公告)号：EP1042799A1

公开(公告)日：2000-10-11

申请号：EP98964886.0

申请日：1998-12-23

Applicant: AlliedSignal Inc.

Inventor： DEMMIN, Timothy, R. ,  LULY, Matthew, H. ,  FATHIMULLA, Mohammed, A.

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  Y02C20/30 ,  Y02P70/605

Abstract: A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula: CxHyFz wherein: x = 3, 4 or 5; 2x≥z≥y; and y+z=2x+2; and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.

公开(公告)号：EP1042800A1

公开(公告)日：2000-10-11

申请号：EP98964889.4

申请日：1998-12-23

Applicant: AlliedSignal Inc.

Inventor： DEMMIN, Timothy, R. ,  LULY, Matthew, H. ,  FATHIMULLA, Mohammed, A.

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/306

CPC classification number: H01L21/32136 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/32137 ,  Y02C20/30 ,  Y02P70/605

Abstract: A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F-CO-[(CR1R2)m-CO]n-F and F-CO-R3-CO-F, and wherein: m = 0, 1, 2, 3, 4, or 5; n = 1; R?1 and R2¿ represent H, F or C¿x?HyFz; wherein: x = 1 or 2; and y+z =2x+1; R?3¿ represents CR?4 = CR5, R6R7¿C = C or C C; wherein: R4-7 represent H, F, or C¿x?HyFz; wherein: x = 1 or 2; and y+z = 2x+1; and also including the cleaning of a surface by use of an etchant compound, and further including an etching composition which includes said etchant compound and also an etchant-modifier.