公开(公告)号：WO2011038470A4

公开(公告)日：2011-06-23

申请号：PCT/BG2010000016

申请日：2010-09-27

Applicant: AMG TECHNOLOGY LTD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: G01Q60/38 ,  G01Q10/06 ,  G01Q70/10 ,  G01Q70/12

CPC classification number: G01Q70/12 ,  G01Q10/045 ,  G01Q60/38 ,  G01Q70/10

Abstract: The sensors for SPM consist of a body, microcantilever and probe member, having a common flat surface in which at least one functionalization element shaped as trench and/or opening is formed with a heterogeneous probe element assembled in it, such as carbon nanotube (CNT) or other type nano-sized tubes, fibers, micro-crystals etc., including such with a complex shape and specially functionalized. In a sensor embodiment piezoresistors are used for transdusing the bending oscillation of the microcantilever and probe member in electrical signal. The three-dimensional measurement method allows using common scanning microscopy system, in a particular point of the scanning grid to perform measurement in all three directions without translating/rotating the system and/or the sample or change the sensor, by controlled periodic actuation of sensor with microcantilever and probe member with individual oscillation characteristics of bending without torsion in each direction of measurement, which characteristics are discernible from one another upon measurement and the number of the probe elements used is sufficient to ensure measurement in each of the three directions. The invention includes also a method for manufacturing the described sensor.

Abstract translation: 用于SPM的传感器由主体，微悬臂梁和探针构件组成，具有共同的平坦表面，其中形成为沟槽和/或开口的至少一个功能化元件形成有组装在其中的异质探针元件，例如碳纳米管（CNT ）或其他类型的纳米尺寸的管，纤维，微晶等，包括具有复杂形状和特别功能化的。 在传感器实施例中，压敏电阻器用于以电信号转换微型悬臂梁和探针构件的弯曲振荡。 三维测量方法允许使用普通扫描显微镜系统，在扫描网格的特定点，在所有三个方向上执行测量，而不需要通过传感器的受控周期性致动来平移/旋转系统和/或样品或改变传感器 具有在每个测量方向上具有弯曲而没有扭转的单独振动特性的微型悬臂梁和探针构件，这些特性在测量时可以彼此辨别，并且所使用的探针元件的数量足以确保在三个方向中的每一个方向上的测量。 本发明还包括用于制造所述传感器的方法。

公开(公告)号：WO2015164931A3

公开(公告)日：2015-12-23

申请号：PCT/BG2015000011

申请日：2015-04-28

Applicant: AMG TECHNOLOGY LTD

Inventor： STAVROV VLADIMIR

IPC: B81C99/00 ,  B25J7/00 ,  G01B5/012

CPC classification number: B81C99/002 ,  G01B7/003

Abstract: The invention relates to microelectromechanical (MEMS) sensors for contact mode measuring the position of micro- and macro-dimensional objects within a working range of up to 5 millimeters, and to a method for position monitoring with accuracy on the order of nanometers and better. The sensor is used in positioning systems with very high accuracy, for measurement and control in the field of micro-/nanotechnologies, and in other fields. The sensor comprises an anchored body (1) with a measuring microcantilever (2), piezoresistors (4) embedded in the base of the microcantilever (2), and an actuated element 1' which is fixedly attached to a movable object, the position of which is to be monitored. The body (1) attached to a stationary object, and the element 1' are connected via at least one compliant transmission mechanism (5), comprising the microcantilever (2), and a chain of auxiliary flexure elements (6, 7, 8, 14 or 10), being connected to the movable end thereof.

Abstract translation: 本发明涉及用于接触模式的微机电（MEMS）传感器，该传感器测量在高达5毫米的工作范围内的微尺寸物体和宏观尺寸物体的位置，并且涉及一种准确度在数量级以上的位置监测方法。 该传感器用于具有非常高精度的定位系统，用于微/纳米技术领域的测量和控制以及其他领域。 传感器包括具有测量微悬臂梁（2）的锚固体（1），嵌入在微型悬臂梁（2）的基部中的压电电阻器（4））和固定地连接到可移动物体上的致动元件1' 这将被监控。 附接到静止物体的本体（1）和元件1'经由至少一个柔性传动机构（5）连接，包括微型悬架（2）和一连串的辅助挠曲元件（6,7,8， 14或10），连接到其可动端。

公开(公告)号：WO2010139034A4

公开(公告)日：2011-06-30

申请号：PCT/BG2010000007

申请日：2010-06-01

Applicant: AMG TECHNOLOGY LTD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2203/0742

Abstract: The method of fabricating devices for microelectromechanical systems (MEMS) with electrical components in their sidewalls is applicable for the production of microstructures with various electrical and mechanical properties that can be used for sensing in different technical areas. The method consists of three stages and through numerous repetitions of processes of creation of protective layers, photolithographical patterning, consecutive etching processes and doping via high temperature ion diffusion performed over non-deformable semiconductor basic structures, for example monocrystalline Silicon basic structures, it gives opportunity of building of electrical components in the sidewalls of MEMS devices. The electrical components so obtained can have equal or different parameters and can be disposed in parts of or the whole sidewalls of such devices. With MEMS devices realized according to the claimed method measurements with considerably increased accuracy, precision and sensitivity can be made.

Abstract translation: 制造具有在其侧壁中的电部件的微机电系统（MEMS）的器件的方法适用于制造具有可用于在不同技术领域中感测的各种电特性和机械特性的微结构。 该方法包括三个阶段，并且通过多次重复的保护层的创建，光刻图案化，连续的蚀刻工艺和经由在不可变形的半导体基础结构（例如单晶硅基础结构）上执行的高温离子扩散进行掺杂的过程的重复， 在MEMS器件的侧壁中构建电子组件。 如此获得的电气部件可以具有相同或不同的参数，并且可以布置在这些装置的部分或整个侧壁中。 根据所要求的方法测量实现的MEMS器件具有显着提高的精度，可以实现精度和灵敏度。

公开(公告)号：WO2010139034A3

公开(公告)日：2011-05-12

申请号：PCT/BG2010000007

申请日：2010-06-01

Applicant: AMG TECHNOLOGY LTD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2203/0742

Abstract: The method of fabricating devices for microelectromechanical systems (MEMS) with electrical components in their sidewalls is applicable for the production of microstructures with various electrical and mechanical properties that can be used for sensing in different technical areas. The method consists of three stages and through numerous repetitions of processes of creation of protective layers, photolithographical patterning, consecutive etching processes and doping via high temperature ion diffusion performed over non-deformable semiconductor basic structures, for example monocrystalline Silicon basic structures, it gives opportunity of building of electrical components in the sidewalls of MEMS devices. The electrical components so obtained can have equal or different parameters and can be disposed in parts of or the whole sidewalls of such devices. With MEMS devices realized according to the claimed method measurements with considerably increased accuracy, precision and sensitivity can be made.

Abstract translation: 制造具有其侧壁中的电气部件的微机电系统（MEMS）的装置的方法适用于具有各种电气和机械特性的微结构的生产，所述微观结构可用于不同技术领域的感测。 该方法由三个阶段组成，通过多次重复制备保护层，光刻图案，连续蚀刻工艺和通过在非可变形半导体基本结构上执行的高温离子扩散（例如单晶硅基本结构）的掺杂过程，它给予机会 在MEMS器件的侧壁中构建电气部件。 如此获得的电气部件可以具有相等或不同的参数，并且可以设置在这些装置的部分或整个侧壁中。 利用根据所要求保护的方法实现的MEMS器件，可以显着提高精度，精度和灵敏度。