公开(公告)号：US11895778B2

公开(公告)日：2024-02-06

申请号：US17552907

申请日：2021-12-16

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Shih-Hsi Tai ,  Tung-Ho Tao ,  Tze-Yang Yeh

IPC: H05K1/02 ,  H05K3/06

CPC classification number: H05K3/061 ,  H05K1/0207 ,  H05K2201/0166

Abstract: An etching method for manufacturing a substrate structure having a thick electrically conductive layer, and a substrate structure having a thick electrically conductive layer are provided. The etching method includes providing an electrically insulating substrate structure including a thermally conductive and electrically insulating layer, an electrically conductive layer, and a non-photosensitive polymer masking layer, removing one part of the non-photosensitive polymer masking layer and one part of the electrically conductive layer by a machining process to form at least one electrically conductive recess having the electrically conductive layer exposed, forming a predetermined thickness ratio between a thickness of the electrically conductive recess and a thickness of the electrically conductive layer, removing a reserved part of the electrically conductive layer between a bottom wall of the electrically conductive recess and a bottom surface of the electrically conductive layer, and removing a remaining part of the non-photosensitive polymer masking layer.

公开(公告)号：US11469154B2

公开(公告)日：2022-10-11

申请号：US17151203

申请日：2021-01-17

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Shih-Hsi Tai ,  Tze-Yang Yeh

IPC: H01L23/367 ,  H01L25/07 ,  H01L23/00 ,  H01L23/373

Abstract: An IGBT module with a heat dissipation structure having a specific layer thickness ratio includes a layer of IGBT chips, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer. The insulating layer is disposed on the heat dissipation layer, the circuit layer is disposed on the insulating layer, the upper bonding layer is disposed on the circuit layer, and the layer of IGBT chips is disposed on the upper bonding layer. A thickness of the insulating layer is less than 0.2 mm, a thickness of the circuit layer is between 1.5 mm and 3 mm, and a thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

公开(公告)号：US11388811B1

公开(公告)日：2022-07-12

申请号：US17326359

申请日：2021-05-21

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Shih-Hsi Tai ,  Tze-Yang Yeh

IPC: H05K1/02

Abstract: A heat-dissipating substrate structure with built-in conductive circuits is provided. The heat-dissipating substrate structure includes an electrically insulating layer, a first metal layer, a second metal layer, and a heat-dissipating layer. The first metal layer and the second metal layer are disposed on the heat-dissipating layer at an interval. The electrically insulating layer encloses and is in contact with side walls of the first metal layer and side walls of the second metal layer, such that a top wall of the first metal layer and a top wall of the second metal layer are exposed from the electrically insulating layer, and at least one of the conductive circuits extends through at least one of the side wall of the first metal layer and the side wall of the second metal layer and is embedded in the electrically insulating layer.