公开(公告)号：US11895778B2

公开(公告)日：2024-02-06

申请号：US17552907

申请日：2021-12-16

Applicant: AMULAIRE THERMAL TECHNOLOGY, INC.

Inventor： Shih-Hsi Tai ,  Tung-Ho Tao ,  Tze-Yang Yeh

IPC: H05K1/02 ,  H05K3/06

CPC classification number: H05K3/061 ,  H05K1/0207 ,  H05K2201/0166

Abstract: An etching method for manufacturing a substrate structure having a thick electrically conductive layer, and a substrate structure having a thick electrically conductive layer are provided. The etching method includes providing an electrically insulating substrate structure including a thermally conductive and electrically insulating layer, an electrically conductive layer, and a non-photosensitive polymer masking layer, removing one part of the non-photosensitive polymer masking layer and one part of the electrically conductive layer by a machining process to form at least one electrically conductive recess having the electrically conductive layer exposed, forming a predetermined thickness ratio between a thickness of the electrically conductive recess and a thickness of the electrically conductive layer, removing a reserved part of the electrically conductive layer between a bottom wall of the electrically conductive recess and a bottom surface of the electrically conductive layer, and removing a remaining part of the non-photosensitive polymer masking layer.