公开(公告)号：DE69902421D1

公开(公告)日：2002-09-12

申请号：DE69902421

申请日：1999-05-12

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KANAYA YASUHIRO ,  NAGASHIMA YASUAKI ,  KIKUGAWA TOMOYUKI ,  NAKANO YOSHINORI

IPC: H01S5/00 ,  B82Y20/00 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00

Abstract: Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer (3) and p-type cladding layer (5, 6, 7) on an n-type semiconductor substrate (1). The concentration distribution of a p-type dopant from the active layer (3) to the p-type cladding layer (5, 6, 7) has a maximum value at a distance of 50 to 250 nm from the end of the active layer (3).

公开(公告)号：DE69902421T2

公开(公告)日：2003-04-24

申请号：DE69902421

申请日：1999-05-12

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KANAYA YASUHIRO ,  NAGASHIMA YASUAKI ,  KIKUGAWA TOMOYUKI ,  NAKANO YOSHINORI

IPC: H01S5/00 ,  B82Y20/00 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00

Abstract: Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer (3) and p-type cladding layer (5, 6, 7) on an n-type semiconductor substrate (1). The concentration distribution of a p-type dopant from the active layer (3) to the p-type cladding layer (5, 6, 7) has a maximum value at a distance of 50 to 250 nm from the end of the active layer (3).