公开(公告)号：AU6269401A

公开(公告)日：2002-03-13

申请号：AU6269401

申请日：2001-06-05

Applicant: JAPAN SCIENCE & TECH CORP ,  ANRITSU CORP

Inventor： YAMAMOTO KAZUSHIGE ,  UEHARA KIYOJI ,  YOSHIDA NAOHIRO ,  KIKUGAWA TOMOYUKI

IPC: G01N21/03 ,  G01N21/31 ,  G01N21/39

公开(公告)号：DE60313249D1

公开(公告)日：2007-05-31

申请号：DE60313249

申请日：2003-06-17

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KIKUGAWA TOMOYUKI ,  TAKAHASHI YOSHIO ,  FUJITA MOTOAKI

IPC: H01S5/12

Abstract: A distributed feedback semiconductor laser includes a semiconductor substrate (111), first and second diffraction grating layers (112a,112b), a connecting layer (113), an active layer (118) and a cladding layer (119). The first and second diffraction grating layers (112a,112b) are provided above the semiconductor substrate (111), and spaced from each other in an output direction of a beam (123).

公开(公告)号：NO20054737A

公开(公告)日：2006-06-07

申请号：NO20054737

申请日：2005-10-14

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KIKUGAWA TOMOYUKI ,  TAKAHASHI YOSHIO ,  SUZUKI TOSHIYUKI ,  KIMURA KIYOSHI

IPC: H01S5/062 ,  G01J3/433 ,  G01N21/39 ,  H01S20060101 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227

CPC classification number: H01S5/12 ,  G01J3/433 ,  G01N21/39 ,  H01S5/02415 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/227

公开(公告)号：DE69902421T2

公开(公告)日：2003-04-24

申请号：DE69902421

申请日：1999-05-12

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KANAYA YASUHIRO ,  NAGASHIMA YASUAKI ,  KIKUGAWA TOMOYUKI ,  NAKANO YOSHINORI

IPC: H01S5/00 ,  B82Y20/00 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00

Abstract: Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer (3) and p-type cladding layer (5, 6, 7) on an n-type semiconductor substrate (1). The concentration distribution of a p-type dopant from the active layer (3) to the p-type cladding layer (5, 6, 7) has a maximum value at a distance of 50 to 250 nm from the end of the active layer (3).

公开(公告)号：NO20054737L

公开(公告)日：2006-06-07

申请号：NO20054737

申请日：2005-10-14

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KIKUGAWA TOMOYUKI ,  TAKAHASHI YOSHIO ,  SUZUKI TOSHIYUKI ,  KIMURA KIYOSHI

IPC: H01S5/062 ,  G01J3/433 ,  G01N21/39 ,  H01S20060101 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227

Abstract: A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 µm to 500 µm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 µm to 2 µm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.

公开(公告)号：DE60203840T2

公开(公告)日：2006-01-19

申请号：DE60203840

申请日：2002-02-06

Applicant: ANRITSU CORP

Inventor： NAGASHIMA YASUAKI ,  SHINONE KATSUNORI ,  KIKUGAWA TOMOYUKI

IPC: H01L21/306 ,  H01S5/22 ,  H01S5/227

Abstract: An n-type semiconductor substrate (21) has a (100) crystal plane as an upper surface. A mesa stripe portion (22) has a trapezoidal shape including an n-type first clad layer (24), an active layer (25) and a p-type second clad layer (26) sequentially stacked on the n-type semiconductor substrate (21) and formed along a direction. A current block portion (23) is formed of a p-type current blocking layer (29) formed outside the mesa stripe portion (22) and on the n-type semiconductor substrate (21) and an n-type current blocking layer (30) formed on the p-type current blocking layer (29). A p-type third clad layer (31) simultaneously covers both the upper surface of the mesa stripe portion (22) and the upper surface of the current blocking portion (23). The inclination angle as being acute angle of the side surface of the mesa stripe portion (22) having the trapezoidal shape and formed along the direction is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.

公开(公告)号：NO20054737D0

公开(公告)日：2005-10-14

申请号：NO20054737

申请日：2005-10-14

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KIKUGAWA TOMOYUKI ,  TAKAHASHI YOSHIO ,  SUZUKI TOSHIYUKI ,  KIMURA KIYOSHI

IPC: G01J3/433 ,  G01N21/39 ,  H01S20060101 ,  H01S5/024 ,  H01S5/062 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227 ,  H01S

Abstract: A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 µm to 500 µm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 µm to 2 µm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.

公开(公告)号：DE60203840D1

公开(公告)日：2005-06-02

申请号：DE60203840

申请日：2002-02-06

Applicant: ANRITSU CORP

Inventor： NAGASHIMA YASUAKI ,  SHINONE KATSUNORI ,  KIKUGAWA TOMOYUKI

IPC: H01L21/306 ,  H01S5/22 ,  H01S5/227

Abstract: An n-type semiconductor substrate (21) has a (100) crystal plane as an upper surface. A mesa stripe portion (22) has a trapezoidal shape including an n-type first clad layer (24), an active layer (25) and a p-type second clad layer (26) sequentially stacked on the n-type semiconductor substrate (21) and formed along a direction. A current block portion (23) is formed of a p-type current blocking layer (29) formed outside the mesa stripe portion (22) and on the n-type semiconductor substrate (21) and an n-type current blocking layer (30) formed on the p-type current blocking layer (29). A p-type third clad layer (31) simultaneously covers both the upper surface of the mesa stripe portion (22) and the upper surface of the current blocking portion (23). The inclination angle as being acute angle of the side surface of the mesa stripe portion (22) having the trapezoidal shape and formed along the direction is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.

公开(公告)号：DE60331034D1

公开(公告)日：2010-03-11

申请号：DE60331034

申请日：2003-10-29

Applicant: ANRITSU CORP

Inventor： NAGASHIMA YASUAKI ,  SHIMOSE YOSHIHARU ,  YAMADA ATSUSHI ,  KIKUGAWA TOMOYUKI

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34

Abstract: Semiconductor light emitting device includes a semiconductor substrate formed from indium phosphide; an active layer at an upper side of the substrate; and an n- and p-type cladding layers formed from indium phosphide for holding the active layer. Semiconductor light emitting device (30) includes a semiconductor substrate (11) formed from indium phosphide; an active layer (14) at an upper side of the substrate; and an n- and p-type cladding layers formed from indium phosphide for holding the active layer. The n-type cladding layer (32) is formed from indium gallium arsenic phosphide. The refractive index of n-type cladding layer is (na) and that of the p-type cladding layer is (nb), such that na is greater than nb. The optical loss by intervalence band light absorption at the p-type cladding layer (18) is suppressed when the distribution of light generated by the active layer is deflected to the n-type cladding layer.

公开(公告)号：DE60313249T2

公开(公告)日：2007-12-20

申请号：DE60313249

申请日：2003-06-17

Applicant: ANRITSU CORP

Inventor： MORI HIROSHI ,  KIKUGAWA TOMOYUKI ,  TAKAHASHI YOSHIO ,  FUJITA MOTOAKI

IPC: H01S5/12

Abstract: A distributed feedback semiconductor laser includes a semiconductor substrate (111), first and second diffraction grating layers (112a,112b), a connecting layer (113), an active layer (118) and a cladding layer (119). The first and second diffraction grating layers (112a,112b) are provided above the semiconductor substrate (111), and spaced from each other in an output direction of a beam (123).