公开(公告)号：AU2017101188A4

公开(公告)日：2017-10-05

申请号：AU2017101188

申请日：2017-08-31

Applicant: APPLE INC

Inventor： GOZZINI GIOVANNI ,  AGRANOV GENNADIY A ,  KING BRIAN M ,  ROSENBLUM GERSHON ,  YAZDANDOOST MOHAMMAD YEKE

IPC: G06K9/00 ,  G06F21/30

Abstract: Abstract An electronic device may include an optical image sensor and a pin hole array mask layer above the optical image sensor. The electronic device may also include a display layer above the pin hole array mask layer that includes spaced apart display pixels, and a transparent cover layer above the display layer defining a finger placement surface capable of receiving a finger adjacent thereto.

公开(公告)号：AU2017101188B4

公开(公告)日：2018-02-22

申请号：AU2017101188

申请日：2017-08-31

Applicant: APPLE INC

Inventor： GOZZINI GIOVANNI ,  AGRANOV GENNADIY A ,  KING BRIAN M ,  ROSENBLUM GERSHON ,  YAZDANDOOST MOHAMMAD YEKE

IPC: G06K9/00 ,  G06F21/30

Abstract: Abstract An electronic device may include an optical image sensor and a pin hole array mask layer above the optical image sensor. The electronic device may also include a display layer above the pin hole array mask layer that includes spaced apart display pixels, and a transparent cover layer above the display layer defining a finger placement surface capable of receiving a finger adjacent thereto.

公开(公告)号：EP3182154A1

公开(公告)日：2017-06-21

申请号：EP16201123

申请日：2016-11-29

Applicant: APPLE INC

Inventor： AGRANOV GENNADIY A ,  WALDON MATTHEW C ,  MANDAI SHINGO

IPC: G01S7/486 ,  G01S7/497 ,  G01S17/89 ,  H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14609 ,  G01S7/4863 ,  G01S7/497 ,  G01S17/89 ,  H01L27/14641 ,  H01L27/14643 ,  H01L31/107

Abstract: A sensing device (20) includes an array (22) of sensing elements (24). Each sensing element includes a photodiode (36), including a p-n junction, and a local biasing circuit (28), coupled to reverse-bias the p-n junction at a bias voltage greater than a breakdown voltage of the p-n junction by a margin sufficient so that a single photon incident on the p-n junction triggers an avalanche pulse output from the sensing element. A bias control circuit (30) is coupled to set the bias voltage in different ones of the sensing elements to different, respective values that are greater than the breakdown voltage.

Abstract translation: 感测装置（20）包括感测元件（24）的阵列（22）。 每个感测元件包括光电二极管（36）和局部偏置电路（28），所述光电二极管包括pn结和局部偏置电路（28），所述局部偏置电路被耦合以在大于所述pn结的击穿电压的偏置电压下反向偏置所述pn结， 入射在pn结上的单个光子触发从感测元件输出的雪崩脉冲。 偏压控制电路（30）被耦合以将不同的感测元件中的偏压设定为不同的，各自的值，其大于击穿电压。