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公开(公告)号:KR20200136809A
公开(公告)日:2020-12-08
申请号:KR20200012990
申请日:2020-02-04
Applicant: APPLE INC
Inventor: CURRAN JAMES A , MINTZ TODD S , MCDONALD DANIEL T
Abstract: 본출원은휴대용전자디바이스용인클로저를형성하는방법에관한것이다. 인클로저는제1 b* 값을갖는금속기판을포함한다. 방법은금속기판위에놓이고그로부터형성되는양극산화된층을형성하는단계를포함하고, 양극산화된층은제1 b* 값의 0.3 이하이고제1 *b 값보다 0.3 이상적은제2 b* 값을갖는다.
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公开(公告)号:AU2016101931B4
公开(公告)日:2017-03-09
申请号:AU2016101931
申请日:2016-10-31
Applicant: APPLE INC
Inventor: CURRAN JAMES A , NOVAK SEAN R
Abstract: Porous metal oxide layers having a color due to visible light interference effects are disclosed. In particular embodiments the porous metal oxide layers are formed using an anodizing processes, which includes a porous metal oxide layer forming process and a barrier layer thickening process. The barrier layer thickening process increases a thickness of a barrier layer within the porous metal oxide layer to a thickness sufficient to and cause incident visible light waves to be reflected in the form of a new visible light waves, thereby imparting a color to the porous metal oxide layer. Methods for tuning the color of the porous metal oxide layer and for color matching surfaces of different types of metal substrates are described.
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公开(公告)号:AU2016101931A4
公开(公告)日:2016-11-24
申请号:AU2016101931
申请日:2016-10-31
Applicant: APPLE INC
Inventor: CURRAN JAMES A , NOVAK SEAN R
Abstract: Porous metal oxide layers having a color due to visible light interference effects are disclosed. In particular embodiments the porous metal oxide layers are formed using an anodizing processes, which includes a porous metal oxide layer forming process and a barrier layer thickening process. The barrier layer thickening process increases a thickness of a barrier layer within the porous metal oxide layer to a thickness sufficient to and cause incident visible light waves to be reflected in the form of a new visible light waves, thereby imparting a color to the porous metal oxide layer. Methods for tuning the color of the porous metal oxide layer and for color matching surfaces of different types of metal substrates are described.
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