公开(公告)号：AU2021103713A4

公开(公告)日：2021-08-19

申请号：AU2021103713

申请日：2021-06-29

Applicant: APPLE INC

Inventor： PARK JAE Y ,  LAFLAQUIERE ARNAUD ,  VEROVE CHRISTOPHE ,  TAN FEI

IPC: H01L33/10 ,  H01S5/125 ,  H01S5/183

Abstract: An optoelectronic device includes a carrier substrate (22), with a lower distributed Bragg reflector (DBR) stack (24) disposed on an area of the substrate and including alternating first 5 dielectric and semiconductor layers. A set of epitaxial layers (26, 28, 30, 31, 34) is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more Il-V semiconductor materials and defines a quantum well structure (28) and a confinement layer (31). An upper DBR stack (38) is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes (40, 42) are coupled to apply an excitation current to the 10 quantum well structure. n -36

公开(公告)号：AU2021103713B4

公开(公告)日：2021-12-02

申请号：AU2021103713

申请日：2021-06-29

Applicant: APPLE INC

Inventor： PARK JAE Y ,  LAFLAQUIERE ARNAUD ,  VEROVE CHRISTOPHE ,  TAN FEI

IPC: H01L33/10 ,  H01S5/125 ,  H01S5/183

Abstract: An optoelectronic device includes a carrier substrate (22), with a lower distributed Bragg reflector (DBR) stack (24) disposed on an area of the substrate and including alternating first 5 dielectric and semiconductor layers. A set of epitaxial layers (26, 28, 30, 31, 34) is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more Il-V semiconductor materials and defines a quantum well structure (28) and a confinement layer (31). An upper DBR stack (38) is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes (40, 42) are coupled to apply an excitation current to the 10 quantum well structure.