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公开(公告)号:WO2018208386A1
公开(公告)日:2018-11-15
申请号:PCT/US2018/025614
申请日:2018-04-02
Applicant: APPLE INC.
Inventor: AGRANOV, Gennadiy A. , CHEN, QingFei , CELLEK, Oray O. , LI, Xiangli
IPC: H04N5/359 , H04N5/3745
Abstract: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.
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公开(公告)号:EP3963633A1
公开(公告)日:2022-03-09
申请号:EP20742584.4
申请日:2020-06-26
Applicant: Apple Inc.
Inventor: AGRANOV, Gennadiy A. , BEILEY, Zachary M. , PATTANTYUS-ABRAHAM, Andras G. , CELLEK, Oray O. , FAN, Xiaofeng , ROSENBLUM, Gershon , LI, Xiangli , MANDELLI, Emanuele , BUETTGEN, Bernhard , SHAO, Yuchuan
IPC: H01L27/146 , H01L23/522
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公开(公告)号:WO2014137578A1
公开(公告)日:2014-09-12
申请号:PCT/US2014/016774
申请日:2014-02-18
Applicant: APPLE INC.
Inventor: LI, Xiangli , FAN, Xiaofeng , WAN, Chung Chun
IPC: H01L27/146 , H04N5/3745 , H04N5/355
CPC classification number: H01L27/14609 , H01L27/14616 , H04N5/35572 , H04N5/37452 , H04N5/378
Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.
Abstract translation: 公开了用于图像传感器中的电荷转移的装置和方法。 图像传感器像素的一个示例可以包括第一电荷存储节点和第二电荷存储节点。 传输电路可以耦合在第一和第二电荷存储节点之间,并且传输电路可以具有靠近第一电荷存储节点的第一区域并且被配置为具有第一电位。 转移电路还可以具有靠近第二电荷存储节点的第二区域,被配置为具有第二较高电位。 输入节点可以被配置为基于提供给输入节点的传送信号来控制第一和第二电位。
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公开(公告)号:WO2015020821A3
公开(公告)日:2015-02-12
申请号:PCT/US2014/048396
申请日:2014-07-28
Applicant: APPLE INC.
Inventor: FAN, Xiaofeng , LI, Philip H. , WAN, Chung Chun , SHARMA, Anup K. , LI, Xiangli
IPC: H01L27/146
Abstract: A pixel (700) in an image sensor can include a photodetector (708) and a storage region (712) disposed in one substrate, or a photodetector disposed in one substrate (738) and a storage region in another substrate (740). A buried light shield (710) is disposed between the photodetector and the storage region. A sense region (716), such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate (714) can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel (744) formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.
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公开(公告)号:WO2014133843A1
公开(公告)日:2014-09-04
申请号:PCT/US2014/017116
申请日:2014-02-19
Applicant: APPLE INC.
Inventor: SHARMA, Anup K. , FAN, Xiaofeng , LI, Xiangli , WAN, Chung Chun , LEE, Chiajen , GILTON, Terry L.
IPC: H04N5/3745 , H01L27/146 , H04N5/359 , H04N5/355
CPC classification number: H01L27/14641 , H04N5/35536 , H04N5/3591 , H04N5/37452
Abstract: A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal.
Abstract translation: 一种操作图像传感器的方法。 在第一次曝光期间累积在光电二极管中的电荷可以响应于第一控制信号被选择性地存储在存储节点中。 响应于第二控制信号,可以选择性地丢弃在第一复位周期期间在光电二极管中累积的电荷。 可以响应于第一控制信号选择性地存储在第二副曝光期间在光电二极管中累积的电荷。 响应于第三控制信号,可以将存储在第一和第二子曝光中的存储节点中的电荷传送到浮动扩散节点。
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公开(公告)号:WO2022031503A1
公开(公告)日:2022-02-10
申请号:PCT/US2021/043607
申请日:2021-07-29
Applicant: APPLE INC.
Inventor: LI, Xiangli
Abstract: An image capture device is described. The image capture device includes an array of pixels. Each pixel includes a 2x2 array of photodetectors. The image capture device also includes an array of 1x2 on chip lenses (OCLs) disposed over the array of pixels. For each pixel in the array of pixels, a respective pair of adjacent 1x2 OCLs is disposed over a pixel, with each respective pair of adjacent 1x2 OCLs including a respective first 1x2 OCL disposed over a first photodetector and a respective second photodetector in the 2x2 array of photodetectors for the pixel, and a second 1x2 OCL disposed over a third photodetector and a fourth photodetector in the 2x2 array of photodetectors for the pixel.
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公开(公告)号:WO2019050743A1
公开(公告)日:2019-03-14
申请号:PCT/US2018/048581
申请日:2018-08-29
Applicant: APPLE INC.
Inventor: LI, Xiangli , PATEL, Manoj C.
IPC: H04N5/3745 , H04N5/232
Abstract: An image capture device, pixel, and method of determining a focus setting for an image capture device are described. The image capture device includes an imaging area and a pixel readout circuit. The imaging area includes a plurality of pixels. The plurality of pixels includes multiple pixels in which each pixel of the multiple pixels includes a two-dimensional array of photodetectors and a microlens. Each photodetector in the array of photodetectors for a pixel is electrically isolated from each other photodetector in the array of photodetectors. A microlens is disposed over the array of photodetectors for the pixel. The pixel readout circuit includes, per pixel, a shared readout circuit associated with the array of photodetectors for the pixel and a set of charge transfer transistors. Each charge transfer transistor is operable to connect a photodetector in the array of photodetectors to the shared readout circuit.
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