公开(公告)号：WO2018057975A1

公开(公告)日：2018-03-29

申请号：PCT/US2017/053083

申请日：2017-09-22

Applicant: APPLE INC.

Inventor： MANDAI, Shingo ,  NICLASS, Cristiano L. ,  KARASAWA, Nobuhiro ,  FAN, Xiaofeng ,  LAFLAQUIERE, Arnaud ,  AGRANOV, Gennadiy A.

IPC: H01L27/146

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region (400) including an anode gradient layer (402), a cathode region (404) positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer (408) positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements (424) are used to provide electrical and optical isolation between SPAD regions.

Abstract translation: 背照式单光子雪崩二极管（SPAD）图像传感器包括垂直堆叠在电路晶片上的传感器晶片。 传感器晶片包括一个或多个SPAD区域，每个SPAD区域（400）包括阳极梯度层（402），位于SPAD区域的前表面附近的阴极区域（404）以及阳极雪崩层（408 ）位于阴极区域上方。 每个SPAD区域通过晶片间连接器连接到电路晶片中的电压源和输出电路。 深沟槽隔离元件（424）用于在SPAD区域之间提供电气和光学隔离。

公开(公告)号：WO2014143416A1

公开(公告)日：2014-09-18

申请号：PCT/US2014/012918

申请日：2014-01-24

Applicant: APPLE INC.

Inventor： FAN, Xiaofeng

IPC: H01L27/146

CPC classification number: H04N3/155 ,  H01L27/14609 ,  H01L27/14806 ,  H04N5/335 ,  H04N5/3575 ,  H04N5/37452 ,  H04N5/378

Abstract: A method for performing correlated double sampling for a sensor, such as an image sensor. The method includes collecting a first charge corresponding to a first parameter, transferring the first charge to a first storage component, transferring the first charge from the first storage component to a second storage component, resetting the first storage component, transferring the first charge from the second storage component to the first storage component, and reading the first storage component to determine the first charge. The method may be implemented in electronic devices including image sensors.

Abstract translation: 用于对诸如图像传感器的传感器执行相关双重采样的方法。 该方法包括收集对应于第一参数的第一电荷，将第一电荷转移到第一存储组件，将第一电荷从第一存储组件转移到第二存储组件，复位第一存储组件，将第一电荷从 第二存储组件到第一存储组件，以及读取第一存储组件以确定第一充电。 该方法可以在包括图像传感器的电子设备中实现。

公开(公告)号：WO2019045873A1

公开(公告)日：2019-03-07

申请号：PCT/US2018/040531

申请日：2018-07-02

Applicant: APPLE INC.

Inventor： LIN, Chin Han ,  LI, Weiping ,  FAN, Xiaofeng

IPC: H01S5/42 ,  H01S5/183 ,  H01S5/042 ,  H01S5/20

Abstract: An optoelectronic device includes a semiconductor substrate (10) and an array of optoelectronic cells (12), formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack (20); second epitaxial layers formed over the lower DBR stack, defining a quantum well structure (22); third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack (24); and electrodes (30) formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells (16), interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

公开(公告)号：WO2017222618A1

公开(公告)日：2017-12-28

申请号：PCT/US2017/023121

申请日：2017-03-20

Applicant: APPLE INC.

Inventor： MACKINNON, Neil ,  LI, Weiping ,  FAN, Xiaofeng

IPC: H01S5/183 ,  H01S5/42

CPC classification number: F21V3/049 ,  F21Y2115/30 ,  H01S5/005 ,  H01S5/18386 ,  H01S5/18388 ,  H01S5/18391 ,  H01S5/423

Abstract: A radiation source (20) includes a semiconductor substrate (24), an array of vertical-cavity surface-emitting lasers (VCSELs) (22) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer (40, 50) formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

Abstract translation: 辐射源（20）包括半导体衬底（24），在衬底上形成的垂直腔表面发射激光器（VCSEL）阵列（22），其被配置为发射光辐射 以及在VCSEL阵列上方形成的透明结晶层（40,50）。 透明结晶层具有构造成扩散由VCSEL发射的辐射的外表面。

公开(公告)号：WO2014158443A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/016788

申请日：2014-02-18

Applicant: APPLE INC.

Inventor： FAN, Xiaofeng

IPC: H04N5/347 ,  H04N5/355

CPC classification number: H04N5/378 ,  H04N5/347 ,  H04N5/355

Abstract: An image sensor can include pixels that are grouped into subsets of pixels, with each subset including three or more pixels. A method for asymmetrical high dynamic range imaging can include capturing an image of a subject scene using a single integration time for all of the pixels. In a subset of pixels, charge in N pixels is read out and summed together. N represents a number that is between two and one less than a total number of pixels in the subset. Un-summed charge is read out from one pixel in the subset. The un-summed charge and the summed charge are combined when producing a high dynamic range image.

Abstract translation: 图像传感器可以包括被分组为像素子集的像素，每个子集包括三个或更多像素。 用于非对称高动态范围成像的方法可以包括使用针对所有像素的单个积分时间捕获对象场景的图像。 在像素的子集中，读出N个像素中的电荷并将其相加。 N表示小于子集中的像素总数的两个和一个之间的数字。 从子集中的一个像素读取非总和电荷。 当产生高动态范围图像时，将不相加电荷和总和电荷组合。

公开(公告)号：WO2014137578A1

公开(公告)日：2014-09-12

申请号：PCT/US2014/016774

申请日：2014-02-18

Applicant: APPLE INC.

Inventor： LI, Xiangli ,  FAN, Xiaofeng ,  WAN, Chung Chun

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/355

CPC classification number: H01L27/14609 ,  H01L27/14616 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/378

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.

Abstract translation: 公开了用于图像传感器中的电荷转移的装置和方法。 图像传感器像素的一个示例可以包括第一电荷存储节点和第二电荷存储节点。 传输电路可以耦合在第一和第二电荷存储节点之间，并且传输电路可以具有靠近第一电荷存储节点的第一区域并且被配置为具有第一电位。 转移电路还可以具有靠近第二电荷存储节点的第二区域，被配置为具有第二较高电位。 输入节点可以被配置为基于提供给输入节点的传送信号来控制第一和第二电位。

公开(公告)号：WO2016114909A1

公开(公告)日：2016-07-21

申请号：PCT/US2015/067214

申请日：2015-12-21

Applicant: APPLE INC.

Inventor： FAN, Xiaofeng ,  BIBL, Andreas ,  SAKARIYA, Kapil, V. ,  NAUTA, Tore

IPC: H01L23/60 ,  G02F1/1335 ,  H02H9/04 ,  H05K1/02

CPC classification number: G09G3/3208 ,  G09G3/20 ,  G09G2330/04 ,  H01L25/167 ,  H01L27/0248 ,  H01L2924/0002 ,  H02H9/046 ,  H01L2924/00

Abstract: A display system includes an array of light emitting diodes (LEDs), first and second driver chips, and one or more protection chips on a display substrate. The first and second driver chips are to drive a first group of LEDs of the array of LEDs and a second group of LEDs of the array of LEDs, respectively. Each protection chip includes one or more electro-static discharge (ESD) protection devices to assist with protecting the driver chips from damage caused by an ESD event. In one embodiment, each ESD protection device is connected between one or more signal lines, one or more power supply voltage lines, and an electrical ground line of the display substrate. In one embodiment, at least one protection chip comprises one or more electric overstress (EOS) protection devices to assist with protecting the driver chips from damage caused by an EOS event.

Abstract translation: 显示系统包括发光二极管（LED）阵列，第一和第二驱动器芯片以及显示基板上的一个或多个保护芯片。 第一和第二驱动器芯片分别驱动LED阵列的第一组LED和LED阵列的第二组LED。 每个保护芯片包括一个或多个静电放电（ESD）保护装置，以帮助保护驱动器芯片免受ESD事件引起的损坏。 在一个实施例中，每个ESD保护装置连接在一个或多个信号线，一个或多个电源电压线和显示基板的电接地线之间。 在一个实施例中，至少一个保护芯片包括一个或多个电过载（EOS）保护装置，以帮助保护驱动器芯片免受由EOS事件引起的损坏。

公开(公告)号：WO2014120447A1

公开(公告)日：2014-08-07

申请号：PCT/US2014/011682

申请日：2014-01-15

Applicant: APPLE INC.

Inventor： FAN, Xiaofeng

IPC: H01L27/146 ,  H01L29/78 ,  H01L29/786

CPC classification number: H04N5/369 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14634 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14843 ,  H01L29/7827 ,  H04N5/335 ,  H04N9/045

Abstract: A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.

Abstract translation: 具有光电二极管芯片和晶体管阵列芯片的垂直堆叠图像传感器。 光电二极管芯片包括至少一个光电二极管，并且传输门从光电二极管芯片的顶表面垂直延伸。 图像传感器还包括堆叠在光电二极管芯片顶部的晶体管阵列芯片。 晶体管阵列芯片包括控制电路和存储节点。 图像传感器还包括垂直堆叠在晶体管阵列芯片上的逻辑芯片。 传输门将数据从至少一个光电二极管传送到晶体管阵列芯片，逻辑芯片选择性地激活垂直传输门，复位栅极，源极跟随器栅极和行选择栅极。

公开(公告)号：WO2015020821A3

公开(公告)日：2015-02-12

申请号：PCT/US2014/048396

申请日：2014-07-28

Applicant: APPLE INC.

Inventor： FAN, Xiaofeng ,  LI, Philip H. ,  WAN, Chung Chun ,  SHARMA, Anup K. ,  LI, Xiangli

IPC: H01L27/146

Abstract: A pixel (700) in an image sensor can include a photodetector (708) and a storage region (712) disposed in one substrate, or a photodetector disposed in one substrate (738) and a storage region in another substrate (740). A buried light shield (710) is disposed between the photodetector and the storage region. A sense region (716), such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate (714) can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel (744) formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

公开(公告)号：WO2014133843A1

公开(公告)日：2014-09-04

申请号：PCT/US2014/017116

申请日：2014-02-19

Applicant: APPLE INC.

Inventor： SHARMA, Anup K. ,  FAN, Xiaofeng ,  LI, Xiangli ,  WAN, Chung Chun ,  LEE, Chiajen ,  GILTON, Terry L.

IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/359 ,  H04N5/355

CPC classification number: H01L27/14641 ,  H04N5/35536 ,  H04N5/3591 ,  H04N5/37452

Abstract: A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal.

Abstract translation: 一种操作图像传感器的方法。 在第一次曝光期间累积在光电二极管中的电荷可以响应于第一控制信号被选择性地存储在存储节点中。 响应于第二控制信号，可以选择性地丢弃在第一复位周期期间在光电二极管中累积的电荷。 可以响应于第一控制信号选择性地存储在第二副曝光期间在光电二极管中累积的电荷。 响应于第三控制信号，可以将存储在第一和第二子曝光中的存储节点中的电荷传送到浮动扩散节点。