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    Methods of doping substrates with ALD
    1.
    发明授权
    Methods of doping substrates with ALD 有权
    使用ALD掺杂底物的方法

    公开(公告)号：US09570307B2

    公开(公告)日：2017-02-14

    申请号：US14939403

    申请日：2015-11-12

    Applicant: Applied Materials, Inc.

    Inventor： Aneesh Nainani ,  Mathew Abraham ,  Er-Xuan Ping

    IPC: H01L21/22 ,  H01L21/225 ,  H01L29/66 ,  H01L21/02

    CPC classification number: H01L21/225 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/02499 ,  H01L21/0262 ,  H01L21/2254 ,  H01L29/66803

    Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

    Abstract translation: 提供掺杂衬底和制造掺杂半导体特征的方法。 一种示例性方法包括提供具有至少一个具有纵横比的特征的基底; 在衬底上沉积掺杂剂层，掺杂剂层具有符合至少一个特征的形状。 介电层沉积在掺杂剂层上，电介质层具有符合掺杂剂层的形状。 将介电层退火以将掺杂剂扩散到衬底中。

    Apparatus for providing and directing heat energy in a process chamber
    2.
    发明授权
    Apparatus for providing and directing heat energy in a process chamber 有权
    用于在处理室中提供和引导热能的装置

    公开(公告)号：US09543172B2

    公开(公告)日：2017-01-10

    申请号：US14043091

    申请日：2013-10-01

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Joseph Johnson ,  Joseph M. Ranish ,  John Gerling ,  Mathew Abraham ,  Aaron Muir Hunter ,  Aneesh Nainani

    IPC: F26B19/00 ,  F26B3/30 ,  F21V7/00 ,  F24C7/00 ,  H01L21/67

    CPC classification number: H01L21/67115 ,  H01L21/67103 ,  H01L21/67109

    Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.

    Abstract translation: 本文提供了用于向处理室提供热能的设备。 该装置可以包括处理室的处理室主体，具有多个固态源的固态源阵列，其设置在第一基板上，以向处理室提供热能，以加热设置在处理室中的目标部件 主体和至少一个反射器，其布置在靠近所述多个固态源中的一个或多个固态源的第一基板上，以将由所述多个固态源中的一个或多个的所述固态源提供的热能引导到所述目标部件。

    Method of enabling seamless cobalt gap-fill
    3.
    发明授权
    Method of enabling seamless cobalt gap-fill 有权

    公开(公告)号：US10699946B2

    公开(公告)日：2020-06-30

    申请号：US15364780

    申请日：2016-11-30

    Applicant: Applied Materials, Inc.

    Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

    IPC: H01L21/768 ,  H01L21/285 ,  C23C16/18 ,  H01L23/532

    Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

    Methods Of Doping Substrates With ALD
    6.
    发明申请
    Methods Of Doping Substrates With ALD 有权
    具有ALD的掺杂基质的方法

    公开(公告)号：US20160079064A1

    公开(公告)日：2016-03-17

    申请号：US14939403

    申请日：2015-11-12

    Applicant: Applied Materials, Inc.

    Inventor： Aneesh Nainani ,  Mathew Abraham ,  Er-Xuan Ping

    IPC: H01L21/225 ,  H01L21/02

    CPC classification number: H01L21/225 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/02499 ,  H01L21/0262 ,  H01L21/2254 ,  H01L29/66803

    Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

    Abstract translation: 提供掺杂衬底和制造掺杂半导体特征的方法。 一种示例性方法包括提供具有至少一个具有纵横比的特征的基底; 在衬底上沉积掺杂剂层，掺杂剂层具有符合至少一个特征的形状。 介电层沉积在掺杂剂层上，电介质层具有符合掺杂剂层的形状。 将介电层退火以将掺杂剂扩散到衬底中。

    Methods of doping substrates with ALD
    9.
    发明授权
    Methods of doping substrates with ALD 有权
    使用ALD掺杂底物的方法

    公开(公告)号：US09218973B2

    公开(公告)日：2015-12-22

    申请号：US13917039

    申请日：2013-06-13

    Applicant: Applied Materials, Inc.

    Inventor： Aneesh Nainani ,  Mathew Abraham ,  Er-Xuan Ping

    IPC: H01L21/22 ,  H01L21/225 ,  H01L29/66

    CPC classification number: H01L21/225 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/02499 ,  H01L21/0262 ,  H01L21/2254 ,  H01L29/66803

    Abstract: Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.

    Abstract translation: 提供掺杂衬底和制造掺杂半导体特征的方法。 一种示例性方法包括提供具有至少一个具有纵横比的特征的基底; 在衬底上沉积掺杂剂层，掺杂剂层具有符合至少一个特征的形状。 介电层沉积在掺杂剂层上，电介质层具有符合掺杂剂层的形状。 将介电层退火以将掺杂剂扩散到衬底中。

    Method of enabling seamless cobalt gap-fill
    10.
    发明授权
    Method of enabling seamless cobalt gap-fill 有权

    公开(公告)号：US10269633B2

    公开(公告)日：2019-04-23

    申请号：US15811647

    申请日：2017-11-13

    Applicant: Applied Materials, Inc.

    Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

    IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L29/66

    Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

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