公开(公告)号：WO2017112439A1

公开(公告)日：2017-06-29

申请号：PCT/US2016/066080

申请日：2016-12-12

Applicant: APPLIED MATERIALS, INC.

Inventor： WANG, Rongjun ,  SUBRAMANI, Anantha K. ,  CHING, Chi Hong ,  TANG, Xianmin

IPC: H01L21/02 ,  H01L45/00 ,  H01L43/12

CPC classification number: H01J37/3441 ,  C23C14/082 ,  C23C14/3407 ,  C23C14/3464 ,  H01J37/32477 ,  H01J37/3429

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

Abstract translation: 本文公开了用于处理衬底的方法和设备。 在一些实施例中，处理腔室包括：限定内部容积的腔室主体; 衬底支撑件，用于在内部容积内支撑衬底; 多个阴极，所述多个阴极耦合到所述室体并且具有相应的多个待溅射到所述衬底上的靶; 以及屏蔽罩，其可旋转地联接到腔室主体的上部并且具有至少一个孔以暴露要被溅射的多个目标中的至少一个，并且至少一个口袋设置在屏蔽件的后侧以容纳和覆盖至少一个 所述多个靶中的另一个不被溅射，其中所述屏蔽件被配置为围绕所述处理室的中心轴线旋转并且线性地移动。

公开(公告)号：WO2013116495A1

公开(公告)日：2013-08-08

申请号：PCT/US2013/024107

申请日：2013-01-31

Applicant: APPLIED MATERIALS, INC. ,  MA, Paul F. ,  LIU, Guojun ,  LAKSHMANAN, Annamalai ,  WU, Dien-Yeh ,  SUBRAMANI, Anantha K.

Inventor： MA, Paul F. ,  LIU, Guojun ,  LAKSHMANAN, Annamalai ,  WU, Dien-Yeh ,  SUBRAMANI, Anantha K.

IPC: C23C16/50 ,  C23C16/448 ,  C23C16/455

CPC classification number: H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

Abstract: Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

Abstract translation: 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。

公开(公告)号：WO2022020194A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/041948

申请日：2021-07-16

Applicant: APPLIED MATERIALS, INC.

Inventor： SUBRAMANI, Anantha K. ,  GUO, Yang ,  FAZELI, Seyyed Abdolreza ,  PATHAK, Nitin ,  RAMAMURTHI, Badri N. ,  BERA, Kallol ,  LI, Xiaopu ,  KRAUS, Philip A. ,  SRINIVASAN, Swaminathan

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  C23C16/54 ,  C23C14/56

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

公开(公告)号：WO2019169253A1

公开(公告)日：2019-09-06

申请号：PCT/US2019/020264

申请日：2019-03-01

Applicant: APPLIED MATERIALS, INC.

Inventor： KUDELA, Jozef ,  TANAKA, Tsutomu ,  GARACHTCHENKO, Alexander V. ,  DZILNO, Dmitry A. ,  SHERVEGAR, Avinash ,  BERA, Kallol ,  LI, Xiaopu ,  SUBRAMANI, Anantha K. ,  FORSTER, John C.

IPC: H01J37/32

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

公开(公告)号：WO2012125469A2

公开(公告)日：2012-09-20

申请号：PCT/US2012/028521

申请日：2012-03-09

Applicant: APPLIED MATERIALS, INC. ,  EWERT, Maurice E. ,  SUBRAMANI, Anantha K. ,  KELKAR, Umesh M. ,  BALASUBRAMANYAM, Chandrasekhar ,  RANISH, Joseph M.

Inventor： EWERT, Maurice E. ,  SUBRAMANI, Anantha K. ,  KELKAR, Umesh M. ,  BALASUBRAMANYAM, Chandrasekhar ,  RANISH, Joseph M.

IPC: H01L21/205

CPC classification number: C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

Abstract translation: 公开了用于处理基材的方法和设备。 该设备是一个双功能处理室，可以在基板上执行材料处理和热处理。 腔室具有布置在腔室的处理位置和运输位置之间的环形辐射源。 升降杆的长度足以将基板保持在加工位置，同时将基板支撑件降低到辐射源平面下方以对基板进行辐射加热。 处理在其第一表面中形成有孔的衬底的方法包括在孔中的第一表面上沉积材料并通过加热与第一表面相对的衬底的第二表面来回流材料。 然后可以沉积第二种材料，部分或完全填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：EP4508256A1

公开(公告)日：2025-02-19

申请号：EP22937641.3

申请日：2022-07-07

Applicant: Applied Materials, Inc.

Inventor： SUBRAMANI, Anantha K. ,  FAZELI, Seyyed Abdoireza ,  GUO, Yang ,  BAGINAGERE, Chandrashekara ,  SUNDAR, Ramcharan ,  KIM, Yunho ,  PATIBANDLA, Rajasekhar

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509

公开(公告)号：EP3391406A1

公开(公告)日：2018-10-24

申请号：EP16879880.9

申请日：2016-12-12

Applicant: Applied Materials, Inc.

Inventor： WANG, Rongjun ,  SUBRAMANI, Anantha K. ,  CHING, Chi Hong ,  TANG, Xianmin

IPC: H01L21/02 ,  H01L45/00 ,  H01L43/12

CPC classification number: H01J37/3441 ,  C23C14/082 ,  C23C14/3407 ,  C23C14/3464 ,  H01J37/32477 ,  H01J37/3429

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

公开(公告)号：EP3369109A1

公开(公告)日：2018-09-05

申请号：EP16860958.4

申请日：2016-10-28

Applicant: Applied Materials, Inc.

Inventor： SWAMINATHAN, Bharath ,  SUBRAMANI, Anantha K.

IPC: H01L21/683 ,  H01L21/203

CPC classification number: H01L21/6833 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792 ,  H01R39/60 ,  H01R39/64

Abstract: Embodiments of the present disclosure relate to a rotatable RF coupling device and an electrostatic chuck incorporating the same. In some embodiments, a rotatable RF coupling device includes a conductive plate; a rotatable split cylinder configured to be coupled to a dielectric disk of an electrostatic chuck to provide RF power to one or more RF bias electrodes disposed within the dielectric disk; a plurality of RF input taps coupled to the conductive plate to couple RF power to the conductive plate; a stationary ring coupled to the conductive plate and surrounding the rotatable split cylinder; and a grounded shield surrounding the conductive plate, the stationary ring, and the rotatable split cylinder.

公开(公告)号：EP3084819A1

公开(公告)日：2016-10-26

申请号：EP14872752.2

申请日：2014-12-08

Applicant: Applied Materials, Inc.

Inventor： SUBRAMANI, Anantha K. ,  GOEL, Ashish ,  WANG, Wei W. ,  SWAMINATHAN, Bharath ,  PARKHE, Vijay D. ,  YUAN, Xiaoxiong

IPC: H01L21/683 ,  H02N13/00 ,  B23Q3/15

CPC classification number: H02N13/00 ,  H01J37/32091 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68792

Abstract: An electrostatic chuck includes a dielectric disk having a support surface to support a substrate and an opposing second surface, wherein at least one chucking electrode is disposed within the dielectric disk; a radio frequency (RF) bias plate disposed below the dielectric disk; a plurality of lamps disposed below the RF bias plate to heat the dielectric disk; a metallic plate disposed below the lamps to absorb heat generated by the lamps; a shaft coupled to the second surface of the dielectric disk at a first end of the shaft to support the dielectric disk in a spaced apart relation to the RF bias plate and extending away from the dielectric disk and through the RF bias plate and the metallic plate; and a rotation assembly coupled to the shaft to rotate the shaft and the dielectric disk with respect to the RF bias plate, lamps, and metallic plate.

公开(公告)号：WO2018226683A1

公开(公告)日：2018-12-13

申请号：PCT/US2018/036044

申请日：2018-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Hanbing ,  SUBRAMANI, Anantha K. ,  GOEL, Ashish ,  JADHAV, Deepak ,  WANG, Rongjun ,  CHING, Chi Hong

IPC: H01J37/34 ,  C23C14/35

Abstract: Process kits for use in a multi-cathode process chamber are disclosed. Process kits include one or more of a conical shield, rotatable shield, shroud, inner deposition ring, outer deposition ring, or a cover ring. In some embodiments, a process kit includes: a rotatable shield having a base, a conical portion extending downward and outward therefrom, and a collar portion extending outward from the conical portion; an inner deposition ring having a leg portion, a flat portion extending inward from the leg portion, a first recessed portion extending inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion above and extending inwardly from the collar portion, a second recessed portion extending inwardly from the upper flat portion, and a second lip extending upwardly from the second recessed portion.