公开(公告)号：US10957565B2

公开(公告)日：2021-03-23

申请号：US16941405

申请日：2020-07-28

Applicant: Applied Materials, Inc.

Inventor： Shimin Mao ,  Simon Huang ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: B05C11/00 ,  B05C13/00 ,  C23C16/52 ,  C23C14/54 ,  H01L21/67

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

公开(公告)号：US11551905B2

公开(公告)日：2023-01-10

申请号：US15925739

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Yaoling Pan ,  Vijaykumar Krithivasan ,  Shimin Mao ,  Kelvin Chan ,  Michael D. Willwerth ,  Anantha Subramani ,  Ashish Goel ,  Chih-shun Lu ,  Philip Allan Kraus ,  Patrick John Tae ,  Leonard Tedeschi

IPC: H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32 ,  H01L41/31

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

公开(公告)号：US10763143B2

公开(公告)日：2020-09-01

申请号：US15681263

申请日：2017-08-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Shimin Mao ,  Simon Huang ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: B05C11/00 ,  B05C13/00 ,  C23C16/52 ,  C23C14/54 ,  H01L21/67

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

公开(公告)号：US20190057889A1

公开(公告)日：2019-02-21

申请号：US15681263

申请日：2017-08-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Shimin Mao ,  Simon Huang ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: H01L21/67 ,  C23C16/52

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.