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    PRE-CONDITIONED CHAMBER COMPONENTS
    2.
    发明申请
    PRE-CONDITIONED CHAMBER COMPONENTS 审中-公开

    公开(公告)号：WO2020023174A1

    公开(公告)日：2020-01-30

    申请号：PCT/US2019/039332

    申请日：2019-06-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WEST, Brian T. ,  SUN, Lizhong ,  LU, William M.

    IPC: H01J37/32

    Abstract: Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%.

    NON-DISAPPEARING ANODE FOR USE WITH DIELECTRIC DEPOSITION
    3.
    发明申请
    NON-DISAPPEARING ANODE FOR USE WITH DIELECTRIC DEPOSITION 审中-公开
    用于电介质沉积的非消失阳极

    公开(公告)号：WO2017189146A1

    公开(公告)日：2017-11-02

    申请号：PCT/US2017/024749

    申请日：2017-03-29

    Applicant: APPLIED MATERIALS, INC.

    Inventor： COX, Michael S. ,  HAWRYLCHAK, Lara ,  WEST, Brian T.

    IPC: H01J37/34 ,  C23C14/34

    Abstract: Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

    Abstract translation: 本发明的实施例一般涉及用于半导体处理室的阳极。 更具体地，本文描述的实施例涉及一种包括在物理沉积室中用作阳极的屏蔽的处理套件。 所述屏蔽体具有圆柱形带，所述圆柱形带具有顶部和底部，所述圆柱形带的尺寸设置成环绕位于顶部附近的溅射靶的溅射表面和位于底部的基板支撑件，所述圆柱形带具有内表面 。 内表面上布置纹理。 纹理具有多个特征。 阴影区域设置在特征中，其中阴影区域对溅射目标不可见。 一个小的阳极表面设置在阴影区域。

    ENCAPSULATED MAGNETRON
    6.
    发明申请
    ENCAPSULATED MAGNETRON 审中-公开
    封装磁铁

    公开(公告)号：WO2015023400A1

    公开(公告)日：2015-02-19

    申请号：PCT/US2014/047481

    申请日：2014-07-21

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WEST, Brian T. ,  JOHNSON, Roger M. ,  COX, Michael S.

    IPC: C23C14/35

    CPC classification number: H01J37/3405 ,  H01J23/05 ,  H01J23/10 ,  H01J25/50 ,  H01J25/587 ,  H01J37/345 ,  H03B9/10 ,  H03C3/32 ,  H03C5/04

    Abstract: Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. The encapsulated magnetron is described above and in the attached appendix. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.

    Abstract translation: 本发明的实施方案通常提供由受热和水耐受的材料包封的磁控管。 封装的磁控管如上和附录中所述。 在一个实施例中，整个磁控管被封装。 在另一个实施例中，磁控管包括磁极片，并且磁极片不被封装材料覆盖。

    LAVACOAT PRE-CLEAN AND PRE-HEAT
    7.
    发明申请
    LAVACOAT PRE-CLEAN AND PRE-HEAT 审中-公开
    LAVACOAT预清洁和预热

    公开(公告)号：WO2010039760A2

    公开(公告)日：2010-04-08

    申请号：PCT/US2009/058921

    申请日：2009-09-30

    Applicant: APPLIED MATERIALS, INC. ,  WEST, Brian T. ,  BOYD, JR., Wendell ,  TAN, Samantha

    Inventor： WEST, Brian T. ,  BOYD, JR., Wendell ,  TAN, Samantha

    IPC: H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: H01L21/268 ,  H01J37/32458 ,  H01J37/32477 ,  H01J37/32871 ,  H01L21/02521 ,  H01L21/02689

    Abstract: Embodiments described herein provide methods of surface preparation using an electromagnetic beam prior to modification of the surface of a component which advantageously improve the quality of the final texture in those places and correspondingly reduces particle contamination. In one embodiment a method of providing a texture to a surface of a component for use in a semiconductor processing chamber is provided. The method comprises defining a plurality of regions on the surface of a component, moving an electromagnetic beam to a first region of the plurality of regions, scanning the electromagnetic beam across a surface of the first region to heat the surface of the first region, and scanning the electromagnetic beam across the heated surface of the first region to form a feature.

    Abstract translation: 本文描述的实施例提供了在修改部件表面之前使用电磁束的表面制备方法，其有利地改善了那些位置中最终织构的质量并相应地减少了颗粒污染。 在一个实施例中，提供了向半导体处理室中使用的部件的表面提供纹理的方法。 该方法包括在部件的表面上限定多个区域，将电磁波束移动到多个区域的第一区域，扫描电磁束穿过第一区域的表面以加热第一区域的表面;以及 扫描电磁波束穿过第一区域的加热表面以形成特征。

    SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES
    8.
    发明公开
    SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES 审中-公开

    公开(公告)号：EP4170059A1

    公开(公告)日：2023-04-26

    申请号：EP22214820.7

    申请日：2014-08-14

    Applicant: Applied Materials, Inc.

    Inventor： WEST, Brian T. ,  COX, Michael S. ,  OH, Jeonghoon

    IPC: C23C14/34 ,  H01J37/34

    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel, or linear channels, cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

    AUTOMATED TEMPERATURE CONTROLLED SUBSTRATE SUPPORT
    9.
    发明申请
    AUTOMATED TEMPERATURE CONTROLLED SUBSTRATE SUPPORT 审中-公开

    公开(公告)号：WO2022256138A1

    公开(公告)日：2022-12-08

    申请号：PCT/US2022/028280

    申请日：2022-05-09

    Applicant: APPLIED MATERIALS, INC.

    Inventor： HARTWIG, Robert ,  HUDERI SOMANNA, Dinkesh ,  WEST, Brian T.

    IPC: H01L21/67 ,  H01L21/687 ,  C23C14/50 ,  C23C14/54

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

    METHOD FOR RECYCLING SUBSTRATE PROCESS COMPONENTS
    10.
    发明申请
    METHOD FOR RECYCLING SUBSTRATE PROCESS COMPONENTS 审中-公开

    公开(公告)号：WO2018182886A1

    公开(公告)日：2018-10-04

    申请号：PCT/US2018/019329

    申请日：2018-02-23

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WEST, Brian T.

    IPC: H01L21/02 ,  H01L21/78

    Abstract: A method for recycling a substrate process component of a processing chamber is provided. In one example, the recycling process includes retrieving a reference dimension for the substrate process component. The substrate process component includes a side wall having a bottom surface, an outer surface, a pre-defined wall thickness between the bottom surface and the outer surface, and a residue layer. The reference dimension corresponds to the pre-defined wall thickness. The recycling process includes machining the substrate process component with a mechanical cutting tool. The machining includes securing the substrate process component to a work piece holder and passing the mechanical cutting tool across the outer surface in a machining operation controlled by a controller to remove the residue layer. The controller uses the reference dimension to control the machining operation so that the substrate process component has the reference dimension after removal of the residue layer.

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