公开(公告)号：WO02081044A2

公开(公告)日：2002-10-17

申请号：PCT/US0149725

申请日：2001-12-20

Applicant: ASE AMERICAS INC

Inventor： MACKINTOSH BRIAN H ,  OUELLETTE MARC

IPC: C30B15/00 ,  C30B15/34 ,  C30B29/06 ,  B01D

CPC classification number: C30B29/06 ,  C30B15/20 ,  C30B15/34 ,  Y10T117/10 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1056 ,  Y10T117/1068

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Abstract translation: 改进的机械布置控制在晶体生长运行期间将硅颗粒引入到用于熔体补充的EFG（边缘定影膜进料生长）坩埚/模具单元中。 进料单元向上注入硅颗粒，通过坩埚/模具单元的中心毂并且机械装置拦截注入的颗粒并引导它们使得它们在坩埚的选定区域中以降低飞溅的速度落入熔体中，由此 以减少由于在中心毂和邻接部件上形成固体硅块而导致生长过程中断的可能性。 本发明还包括使用法拉第环来改变流过通过加热坩埚模具单元的主感应加热线圈和次级感应加热线圈的电流的比率和机械装置。