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    SELECTIVE CORROSION COMPOSITION FOR SILICON NITRIDE FILM AND METHOD THEREFOR
    1.
    发明专利
    SELECTIVE CORROSION COMPOSITION FOR SILICON NITRIDE FILM AND METHOD THEREFOR 失效

    公开(公告)号：JP2000133631A

    公开(公告)日：2000-05-12

    申请号：JP24064799

    申请日：1999-08-27

    Applicant: ASHLAND INC

    Inventor： HACKETT THOMAS B ,  HATCHER ZACH II

    IPC: H01L21/306 ,  C09K13/04 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To augment the corrosion rate of a silicon nitride by a method wherein a composite semiconductor device is made to corrode in a heating water solution containing a silicon-containing composition easily soluble in a phospholic acid and a water corrosion solution. SOLUTION: The total number of particles is set at 100 particle/ml or less, and at the same time, the size of the particles is set at 0.5 μ or smaller to add the amount of about 16 to 500 ppm of an easily soluble silicon-containing composition, which is a hexafluorosilicic acid, to an electron-grade phospholic acid solution existing at ppm to ppb/l of a low level in metallic ions or an acid and a water corrosion solution at a temperature of 150 to 180 deg.C and a composite semiconductor device is corroded in a water solution. Accordingly, the corrosion rate and selectivity of a silicon nitride can be augmented by executing a corrosion operation in a heating corrosion bath containing a phospholic acid and a silicon-containing composition soluble easily in a corrosion bath.

    CLEANING COMPOSITIONS AND USE THEREOF
    2.
    发明申请
    CLEANING COMPOSITIONS AND USE THEREOF 审中-公开
    清洁组合物及其用途

    公开(公告)号：WO0170920A9

    公开(公告)日：2003-01-16

    申请号：PCT/US0106471

    申请日：2001-03-01

    Applicant: ASHLAND INC

    Inventor： HACKETT THOMAS B

    IPC: C11D1/00 ,  C11D3/24 ,  C11D7/06 ,  G03F1/82 ,  C11D1/12 ,  C11D7/30

    CPC classification number: G03F1/82 ,  C11D1/004 ,  C11D3/245 ,  C11D7/06

    Abstract: An aqueous composition comprising ammonium hydroxide in an amount of about 1 to about 30 % by weight calculated as NH3 and a surface active agent represented by the formula XF2C (CFY)n SO3A wherein X=F, OH or SO3A; Y=F, H, OH or may be omitted thereby creating a double bond; n=1-12; A=NH4 , H , Na , K , Li , R or organic amine cation and R is 1-4 straight chain alkyl group; and wherein the fluoroalkyl group is a linear group; and wherein the surface active agent is present in an amount of about 5 ppm to about 2000 ppm is useful for cleaning photomasks and especially chromium photomasks.

    Abstract translation: 一种水性组合物，其包含按NH 3计算的约1至约30重量％的氢氧化铵和由式XF2C（CFY）n SO3A表示的表面活性剂，其中X = F，OH或SO 3 A; Y = F，H，OH或可以省略，从而产生双键; N = 1-12; A = NH 4 +，H +，Na +，K +，Li +，R +或有机胺阳离子，R为1-4直链烷基; 并且其中所述氟烷基是线性基团; 并且其中表面活性剂以约5ppm至约2000ppm的量存在可用于清洁光掩模，特别是铬光掩模。

    4.
    发明专利
    未知

    公开(公告)号：AT254337T

    公开(公告)日：2003-11-15

    申请号：AT99116743

    申请日：1999-08-27

    Applicant: ASHLAND INC

    Inventor： HACKETT THOMAS B ,  HATCHER ZACH III

    IPC: H01L21/306 ,  C09K13/04 ,  H01L21/311

    Abstract: The invention relates to an aqueous phosphoric acid etch bath composition with a readily soluble silicon containing composition. The baths are used in the etching step of composite semiconductor device manufacturing.

    5.
    发明专利
    未知

    公开(公告)号：DE69912712D1

    公开(公告)日：2003-12-18

    申请号：DE69912712

    申请日：1999-08-27

    Applicant: ASHLAND INC

    Inventor： HACKETT THOMAS B ,  HATCHER III

    IPC: H01L21/306 ,  C09K13/04 ,  H01L21/311

    Abstract: The invention relates to an aqueous phosphoric acid etch bath composition with a readily soluble silicon containing composition. The baths are used in the etching step of composite semiconductor device manufacturing.

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