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公开(公告)号：DE69912712D1
公开(公告)日：2003-12-18
申请号：DE69912712
申请日：1999-08-27
Applicant: ASHLAND INC
Inventor： HACKETT THOMAS B , HATCHER III
IPC: H01L21/306 , C09K13/04 , H01L21/311
Abstract: The invention relates to an aqueous phosphoric acid etch bath composition with a readily soluble silicon containing composition. The baths are used in the etching step of composite semiconductor device manufacturing.
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