SUSCEPTOR RING
    1.
    发明申请
    SUSCEPTOR RING 审中-公开
    SUSCEPTOR环

    公开(公告)号:WO2010016964A2

    公开(公告)日:2010-02-11

    申请号:PCT/US2009/044734

    申请日:2009-05-20

    CPC classification number: C23C16/4585 C23C16/46

    Abstract: A one-piece susceptor ring for housing at least one temperature measuring device is provided. The susceptor ring includes a plate having an aperture formed therethrough and a pair of side ribs integrally connected to a lower surface of the plate. The side ribs are located on opposing sides of the aperture. The susceptor ring further includes a bore formed in each of the pair of side ribs. Each bore is configured to receive a temperature measuring device therein.

    Abstract translation: 提供用于容纳至少一个温度测量装置的一体式基座环。 基座环包括具有穿过其形成的孔的板和与板的下表面一体连接的一对侧肋。 侧肋位于孔的相对侧上。 基座环还包括形成在一对侧肋中的每一个中的孔。 每个孔配置成在其中接收温度测量装置。

    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION
    2.
    发明申请
    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION 审中-公开
    用于减少自动化和背面沉积的基板支撑系统

    公开(公告)号:WO2005081283A2

    公开(公告)日:2005-09-01

    申请号:PCT/US2005/004656

    申请日:2005-02-11

    CPC classification number: H01L21/68735 H01J37/32871 H01L21/67028

    Abstract: A substrate support system (140, 200, 300) comprises a relatively thin circular substrate holder (100) having a plurality of passages (116, 118, 120, 240, 340) extending between top and bottom surfaces thereof. The substrate holder (100) includes a single substrate support ledge or a plurality of substrate support spacer vanes (124) configured to support a peripheral portion of the substrate backside (154) so that a thin gap (152) is formed between the substrate (16) and the substrate holder (100). The vanes (124) can be angled to resist backside deposition of reactant gases as the substrate holder (100) is rotated. A hollow support member (22, 204, 304) provides support to an underside (106) of the substrate holder (100). The hollow support member (22, 204, 304) is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages (116, 240) of the substrate holder (100). The upwardly conveyed gas flows into the gap (152) between the substrate (16) and the substrate holder (100). Depending upon the embodiment of the invention, the gas in the gap (152) can then flow either outward and upward around the substrate edge (17), or downward through passages (118, 120, 340) of the substrate holder (100), if any, that do not lead back into the hollow support member (22, 204, 304). The gas that flows outward and upward around the substrate edge (17) inhibits backside deposition of reactant gases above the substrate (16). The gas that flows downward through the passages (118, 120, 340) that do not lead back to the support member (22, 204, 304) advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side (155). In one embodiment, the support member comprises a hollow multi-armed support spider (22) that conveys gas into selected ones of the passages (116). In another embodiment, the support member comprises a bowl- or cup-shaped structure (204) that conveys gas upward into all of the passages (240). In yet another embodiment, the support member comprises a bowl- or cup-shaped structure (304) that conveys gas upward into all but one or more of the passages (240).

    Abstract translation: 衬底支撑系统(140,200,300)包括相对薄的圆形衬底保持器(100),其具有在其顶表面和底表面之间延伸的多个通道(116,118,120,240,340)。 衬底保持器(100)包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片(124),其被配置为支撑衬底背侧(154)的周边部分,使得在衬底(152)之间形成薄间隙(152) 16)和基板支架(100)。 当衬底保持器(100)旋转时,叶片(124)可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件(22,204,304)为衬底保持器(100)的下侧(106)提供支撑。 中空支撑构件(22,204,304)构造成将气体(例如,惰性气体或清洁气体)向上输送到衬底保持器(100)的一个或多个通道(116,240)中。 向上输送的气体流入衬底(16)和衬底保持器(100)之间的间隙(152)。 根据本发明的实施例,间隙(152)中的气体然后可以围绕衬底边缘(17)向外和向上流动,或者通过衬底保持器(100)的通道(118,120,340)向下流动, (如果有的话)不会引回到中空支撑构件(22,204,304)中。 沿着衬底边缘(17)向外和向上流动的气体阻止在衬底(16)上方的反应气体的背面沉积。 向下流过不通过支撑构件(22,204,304)的通道(118,120,340)的气体有利地通过从扩散的掺杂​​剂原子远离衬底前侧(155)来扫除自发掺杂, 。 在一个实施例中,支撑构件包括将气体输送到选定通道(116)中的中空多臂支撑支架(22)。 在另一个实施例中,支撑构件包括将气体向上输送到所有通道(240)中的碗状或杯状结构(204)。 在另一个实施例中,支撑构件包括碗状或杯状结构(304),其将气体向上输送到除一个或多个通道(240)内的所有通道中。

    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION
    3.
    发明授权
    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION 有权
    基板支撑系统,可降低资金和车回矿床

    公开(公告)号:EP1719167B1

    公开(公告)日:2011-10-26

    申请号:EP05723054.2

    申请日:2005-02-11

    CPC classification number: H01L21/68735 H01J37/32871 H01L21/67028

    Abstract: A substrate support system (140, 200, 300) comprises a relatively thin circular substrate holder (100) having a plurality of passages (116, 118, 120, 240, 340) extending between top and bottom surfaces thereof. The substrate holder (100) includes a single substrate support ledge or a plurality of substrate support spacer vanes (124) configured to support a peripheral portion of the substrate backside (154) so that a thin gap (152) is formed between the substrate (16) and the substrate holder (100). The vanes (124) can be angled to resist backside deposition of reactant gases as the substrate holder (100) is rotated. A hollow support member (22, 204, 304) provides support to an underside (106) of the substrate holder (100). The hollow support member (22, 204, 304) is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages (116, 240) of the substrate holder (100). The upwardly conveyed gas flows into the gap (152) between the substrate (16) and the substrate holder (100). Depending upon the embodiment of the invention, the gas in the gap (152) can then flow either outward and upward around the substrate edge (17), or downward through passages (118, 120, 340) of the substrate holder (100), if any, that do not lead back into the hollow support member (22, 204, 304). The gas that flows outward and upward around the substrate edge (17) inhibits backside deposition of reactant gases above the substrate (16). The gas that flows downward through the passages (118, 120, 340) that do not lead back to the support member (22, 204, 304) advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side (155). In one embodiment, the support member comprises a hollow multi-armed support spider (22) that conveys gas into selected ones of the passages (116). In another embodiment, the support member comprises a bowl- or cup-shaped structure (204) that conveys gas upward into all of the passages (240). In yet another embodiment, the support member comprises a bowl- or cup-shaped structure (304) that conveys gas upward into all but one or more of the passages (240).

    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION
    4.
    发明公开
    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION 有权
    基板支撑系统,可降低资金和车回矿床

    公开(公告)号:EP1719167A2

    公开(公告)日:2006-11-08

    申请号:EP05723054.2

    申请日:2005-02-11

    CPC classification number: H01L21/68735 H01J37/32871 H01L21/67028

    Abstract: A substrate support system (140, 200, 300) comprises a relatively thin circular substrate holder (100) having a plurality of passages (116, 118, 120, 240, 340) extending between top and bottom surfaces thereof. The substrate holder (100) includes a single substrate support ledge or a plurality of substrate support spacer vanes (124) configured to support a peripheral portion of the substrate backside (154) so that a thin gap (152) is formed between the substrate (16) and the substrate holder (100). The vanes (124) can be angled to resist backside deposition of reactant gases as the substrate holder (100) is rotated. A hollow support member (22, 204, 304) provides support to an underside (106) of the substrate holder (100). The hollow support member (22, 204, 304) is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages (116, 240) of the substrate holder (100). The upwardly conveyed gas flows into the gap (152) between the substrate (16) and the substrate holder (100). Depending upon the embodiment of the invention, the gas in the gap (152) can then flow either outward and upward around the substrate edge (17), or downward through passages (118, 120, 340) of the substrate holder (100), if any, that do not lead back into the hollow support member (22, 204, 304). The gas that flows outward and upward around the substrate edge (17) inhibits backside deposition of reactant gases above the substrate (16). The gas that flows downward through the passages (118, 120, 340) that do not lead back to the support member (22, 204, 304) advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side (155). In one embodiment, the support member comprises a hollow multi-armed support spider (22) that conveys gas into selected ones of the passages (116). In another embodiment, the support member comprises a bowl- or cup-shaped structure (204) that conveys gas upward into all of the passages (240). In yet another embodiment, the support member comprises a bowl- or cup-shaped structure (304) that conveys gas upward into all but one or more of the passages (240).

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