SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION
    1.
    发明申请
    SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION 审中-公开
    用于减少自动化和背面沉积的基板支撑系统

    公开(公告)号:WO2005081283A2

    公开(公告)日:2005-09-01

    申请号:PCT/US2005/004656

    申请日:2005-02-11

    CPC classification number: H01L21/68735 H01J37/32871 H01L21/67028

    Abstract: A substrate support system (140, 200, 300) comprises a relatively thin circular substrate holder (100) having a plurality of passages (116, 118, 120, 240, 340) extending between top and bottom surfaces thereof. The substrate holder (100) includes a single substrate support ledge or a plurality of substrate support spacer vanes (124) configured to support a peripheral portion of the substrate backside (154) so that a thin gap (152) is formed between the substrate (16) and the substrate holder (100). The vanes (124) can be angled to resist backside deposition of reactant gases as the substrate holder (100) is rotated. A hollow support member (22, 204, 304) provides support to an underside (106) of the substrate holder (100). The hollow support member (22, 204, 304) is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages (116, 240) of the substrate holder (100). The upwardly conveyed gas flows into the gap (152) between the substrate (16) and the substrate holder (100). Depending upon the embodiment of the invention, the gas in the gap (152) can then flow either outward and upward around the substrate edge (17), or downward through passages (118, 120, 340) of the substrate holder (100), if any, that do not lead back into the hollow support member (22, 204, 304). The gas that flows outward and upward around the substrate edge (17) inhibits backside deposition of reactant gases above the substrate (16). The gas that flows downward through the passages (118, 120, 340) that do not lead back to the support member (22, 204, 304) advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side (155). In one embodiment, the support member comprises a hollow multi-armed support spider (22) that conveys gas into selected ones of the passages (116). In another embodiment, the support member comprises a bowl- or cup-shaped structure (204) that conveys gas upward into all of the passages (240). In yet another embodiment, the support member comprises a bowl- or cup-shaped structure (304) that conveys gas upward into all but one or more of the passages (240).

    Abstract translation: 衬底支撑系统(140,200,300)包括相对薄的圆形衬底保持器(100),其具有在其顶表面和底表面之间延伸的多个通道(116,118,120,240,340)。 衬底保持器(100)包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片(124),其被配置为支撑衬底背侧(154)的周边部分,使得在衬底(152)之间形成薄间隙(152) 16)和基板支架(100)。 当衬底保持器(100)旋转时,叶片(124)可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件(22,204,304)为衬底保持器(100)的下侧(106)提供支撑。 中空支撑构件(22,204,304)构造成将气体(例如,惰性气体或清洁气体)向上输送到衬底保持器(100)的一个或多个通道(116,240)中。 向上输送的气体流入衬底(16)和衬底保持器(100)之间的间隙(152)。 根据本发明的实施例,间隙(152)中的气体然后可以围绕衬底边缘(17)向外和向上流动,或者通过衬底保持器(100)的通道(118,120,340)向下流动, (如果有的话)不会引回到中空支撑构件(22,204,304)中。 沿着衬底边缘(17)向外和向上流动的气体阻止在衬底(16)上方的反应气体的背面沉积。 向下流过不通过支撑构件(22,204,304)的通道(118,120,340)的气体有利地通过从扩散的掺杂​​剂原子远离衬底前侧(155)来扫除自发掺杂, 。 在一个实施例中,支撑构件包括将气体输送到选定通道(116)中的中空多臂支撑支架(22)。 在另一个实施例中,支撑构件包括将气体向上输送到所有通道(240)中的碗状或杯状结构(204)。 在另一个实施例中,支撑构件包括碗状或杯状结构(304),其将气体向上输送到除一个或多个通道(240)内的所有通道中。

    THERMOCOUPLE
    2.
    发明申请
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号:WO2010077533A2

    公开(公告)日:2010-07-08

    申请号:PCT/US2009/066377

    申请日:2009-12-02

    CPC classification number: G01K7/04 C23C16/46 G01K13/00

    Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    Abstract translation: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    SUSCEPTOR RING
    3.
    发明申请
    SUSCEPTOR RING 审中-公开
    SUSCEPTOR环

    公开(公告)号:WO2010016964A2

    公开(公告)日:2010-02-11

    申请号:PCT/US2009/044734

    申请日:2009-05-20

    CPC classification number: C23C16/4585 C23C16/46

    Abstract: A one-piece susceptor ring for housing at least one temperature measuring device is provided. The susceptor ring includes a plate having an aperture formed therethrough and a pair of side ribs integrally connected to a lower surface of the plate. The side ribs are located on opposing sides of the aperture. The susceptor ring further includes a bore formed in each of the pair of side ribs. Each bore is configured to receive a temperature measuring device therein.

    Abstract translation: 提供用于容纳至少一个温度测量装置的一体式基座环。 基座环包括具有穿过其形成的孔的板和与板的下表面一体连接的一对侧肋。 侧肋位于孔的相对侧上。 基座环还包括形成在一对侧肋中的每一个中的孔。 每个孔配置成在其中接收温度测量装置。

    REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS
    4.
    发明申请
    REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS 审中-公开
    用于半导体处理器的冗余温度传感器

    公开(公告)号:WO2009082539A1

    公开(公告)日:2009-07-02

    申请号:PCT/US2008/080810

    申请日:2008-10-22

    CPC classification number: G01K7/04 G01K13/00 G01K15/00 H01L21/67248

    Abstract: Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple (110) comprising a first junction (112) and a second junction (114) positioned to measure temperature at substantially the same portion of a substrate (16). A controller (120) may detect failures in the first junction (112), the second junction (114), a first wire pair (113) extending from the first junction (112), or a second wire pair (115) extending from the second junction (114). The controller (120) desirably responds to a detected failure of the first junction (112) or first wire pair (113) by selecting the second junction (114) and second wire pair (115). Conversely, the controller (120) desirably responds to a detected failure of the second junction (114) or second wire pair (115) by selecting the first junction (112) and first wire pair (113). Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

    Abstract translation: 提供用于测量半导体处理室中的温度的系统。 实施例提供了多结热电偶(110),其包括第一结(112)和第二结(114),第二结(114)被定位成测量衬底(16)的基本相同部分处的温度。 控制器(120)可以检测第一结(112),第二结(114),从第一结(112)延伸的第一线对(113)或从第一结(112)延伸的第二线对 第二结(114)。 控制器120期望通过选择第二连接点114和第二线对115来响应检测到的第一结112或第一线对113的故障。 相反地​​,控制器120期望通过选择第一结(112)和第一线对(113)来响应第二结(114)或第二线对(115)的检测到的故障。 尽管本文教导的系统可能允许精确和基本上不间断的温度测量,尽管热电偶中的接头或线对失效。

    SELF-CENTERING SUSCEPTOR RING ASSEMBLY
    5.
    发明申请
    SELF-CENTERING SUSCEPTOR RING ASSEMBLY 审中-公开
    自行设计的SUSCEPTOR环组件

    公开(公告)号:WO2010062476A1

    公开(公告)日:2010-06-03

    申请号:PCT/US2009/059501

    申请日:2009-10-05

    CPC classification number: H01L21/68785 H01L21/67103 H01L21/6875 H05B6/105

    Abstract: A self-centering susceptor ring assembly is provided. The susceptor ring assembly includes a susceptor ring support member and a susceptor ring supported on the susceptor ring support member. The susceptor ring support member includes at least three pins extending upwardly relative to the lower inner surface of the reaction chamber. The susceptor ring includes at least three detents formed in a bottom surface to receive the pins from the susceptor ring support member. The detents are configured to allow the pins to slide therewithin while the susceptor ring thermally expands and contracts, wherein the detents are sized and shaped such that as the susceptor ring thermally expands and contracts the gap between the susceptor ring and the susceptor located within the aperture of the susceptor ring remains substantially uniform about the entire circumference of the susceptor, and thereby maintains the same center axis.

    Abstract translation: 提供了一个自定心的基座环组件。 基座环组件包括基座环支撑构件和支撑在基座环支撑构件上的基座环。 基座环支撑构件包括相对于反应室的下内表面向上延伸的至少三个销。 基座环包括形成在底表面中的至少三个棘爪,以从基座环支撑构件接收销。 棘爪构造成允许销在其中滑动,同时基座环热膨胀和收缩,其中棘爪的尺寸和形状使得当基座环热膨胀并收缩基座环和位于孔内的基座之间的间隙时 基座环围绕基座的整个圆周保持基本均匀,从而维持相同的中心轴线。

    A SYSTEM FOR THE IMPROVED HANDLING OF WAFERS WITHIN A PROCESS TOOL
    6.
    发明申请
    A SYSTEM FOR THE IMPROVED HANDLING OF WAFERS WITHIN A PROCESS TOOL 审中-公开
    一种用于在工艺工具中改进水处理的系统

    公开(公告)号:WO2004030048A1

    公开(公告)日:2004-04-08

    申请号:PCT/US2003/029638

    申请日:2003-09-22

    Abstract: A substrate fabrication system is provided which includes a buffer station (30) located inline between a front docking port (14) and a loadlock chamber (40), the buffer station (30) being operatively joined with a front handling chamber (22). Methods of fabricating wafers (20) by quickly transferring them to purgeable buffer stations (30) upon wafers (20) arriving at a docking port (14) are also provided.

    Abstract translation: 提供了一种衬底制造系统,其包括位于前对接端口(14)和负载锁定室(40)之间的缓冲站(30),所述缓冲站(30)可操作地与前处理室(22)连接。 还提供了通过在到达对接端口(14)的晶片(20)上快速将其转移到可清洗缓冲站(30)来制造晶片(20)的方法。

    THERMOCOUPLE
    8.
    发明公开
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号:EP2370996A2

    公开(公告)日:2011-10-05

    申请号:EP09836647.9

    申请日:2009-12-02

    CPC classification number: G01K7/04 C23C16/46 G01K13/00

    Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    Abstract translation: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

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