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    IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS
    1.
    发明申请
    IMPROVED PROCESS FOR DEPOSITION OF SEMICONDUCTOR FILMS 审中-公开

    公开(公告)号：WO2002080244A3

    公开(公告)日：2002-10-10

    申请号：PCT/US2002/002921

    申请日：2002-02-01

    Applicant: ASM AMERICA, INC.

    Inventor： TODD, Michael, A. ,  HAWKINS, Mark, R.

    IPC: H01L21/205

    Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit thin films containing silicon useful in the semiconductor industry in various applications such as transistor gate electrodes.

    METHOD OF LOADING A WAFER ONTO A WAFER HOLDER TO REDUCE THERMAL SHOCK
    2.
    发明申请
    METHOD OF LOADING A WAFER ONTO A WAFER HOLDER TO REDUCE THERMAL SHOCK 审中-公开

    公开(公告)号：WO2003088326A3

    公开(公告)日：2003-10-23

    申请号：PCT/US2003/009806

    申请日：2003-03-27

    Applicant: ASM AMERICA, INC.

    Inventor： KEETON, Tony, J. ,  STAMP, Michael, R. ,  HAWKINS, Mark, R.

    IPC: H01L21/00

    Abstract: One or more of three different measures are taken to preheat a wafer (44) before it is loaded into direct contact with a wafer holder (42), in order to provide optimal throughput while reducing the risk of thermal shock to the wafer (44). The first measure is to move the wafer holder (42) to a raised position prior to inserting the wafer (44) into the reaction chamber (20) and holding the wafer (44) above the wafer holder (42). The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hs purge gas) through the chamber (20) prior to inserting the wafer (44) therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) (51) above the reaction chamber (20).

    METHOD OF LOADING A WAFER ONTO A WAFER HOLDER TO REDUCE THERMAL SHOCK
    3.
    发明申请
    METHOD OF LOADING A WAFER ONTO A WAFER HOLDER TO REDUCE THERMAL SHOCK 审中-公开
    将散热器装载到散热器上以减少热冲击的方法

    公开(公告)号：WO2003088326A2

    公开(公告)日：2003-10-23

    申请号：PCT/US2003/009806

    申请日：2003-03-27

    Applicant: ASM AMERICA, INC.

    Inventor： KEETON, Tony, J. ,  STAMP, Michael, R. ,  HAWKINS, Mark, R.

    IPC: H01L21/00

    CPC classification number: H01L21/67109 ,  H01L21/67115 ,  H01L21/67748

    Abstract: One or more of three different measures are taken to preheat a wafer (44) before it is loaded into direct contact with a wafer holder (42), in order to provide optimal throughput while reducing the risk of thermal shock to the wafer (44). The first measure is to move the wafer holder (42) to a raised position prior to inserting the wafer (44) into the reaction chamber (20) and holding the wafer (44) above the wafer holder (42). The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hs purge gas) through the chamber (20) prior to inserting the wafer (44) therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) (51) above the reaction chamber (20).

    Abstract translation: 在将晶片（44）加载到与晶片保持器（42）直接接触之前，采用三种不同的措施来预热晶片（44），以便在降低对晶片（44）的热冲击的风险的同时提供最佳的吞吐量， 。 第一个措施是在将晶片（44）插入反应室（20）中并将晶片（44）保持在晶片保持器（42）上方之前将晶片保持器（42）移动到升高位置。 第二个措施是在将晶片（44）插入其中之前提供通过腔室（20）的导热气体（例如Hs吹扫气体）的增加的流速。 第三个措施是向反应室（20）上方的辐射热元件（例如加热灯）（51）提供功率偏置。

    PROCESS CHAMBER WITH INNER SUPPORT
    5.
    发明授权
    PROCESS CHAMBER WITH INNER SUPPORT 失效
    与内轴承结构工艺室

    公开(公告)号：EP0852628B1

    公开(公告)日：2001-04-04

    申请号：EP96926233.6

    申请日：1996-08-01

    Applicant: ASM America, Inc.

    Inventor： WENGERT, John, F. ,  JACOBS, Loren, R. ,  HALPIN, Michael, W. ,  FOSTER, Derrick, W. ,  VAN DER JEUGD, Cornelius, A. ,  VYNE, Robert, M. ,  HAWKINS, Mark, R.

    IPC: C23C16/44 ,  C23C16/46 ,  H01L21/00 ,  B01J3/00

    CPC classification number: B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate (40) to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls (12, 14). A central horizontal support plate (40) is provided between two lateral side rails (16, 18) of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region (66, 68), with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

    METHOD OF LOADING A WAFER ONTO A WAFER HOLDER TO REDUCE THERMAL SHOCK
    6.
    发明公开
    METHOD OF LOADING A WAFER ONTO A WAFER HOLDER TO REDUCE THERMAL SHOCK 审中-公开
    装载晶圆上的晶片保持器的方法来减少热冲击

    公开(公告)号：EP1532660A2

    公开(公告)日：2005-05-25

    申请号：EP03746566.3

    申请日：2003-03-27

    Applicant: ASM America, Inc.

    Inventor： KEETON, Tony, J. ,  STAMP, Michael, R. ,  HAWKINS, Mark, R.

    IPC: H01L21/00

    CPC classification number: H01L21/67109 ,  H01L21/67115 ,  H01L21/67748

    Abstract: One or more of three different measures are taken to preheat a wafer (44) before it is loaded into direct contact with a wafer holder (42), in order to provide optimal throughput while reducing the risk of thermal shock to the wafer (44). The first measure is to move the wafer holder (42) to a raised position prior to inserting the wafer (44) into the reaction chamber (20) and holding the wafer (44) above the wafer holder (42). The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hs purge gas) through the chamber (20) prior to inserting the wafer (44) therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) (51) above the reaction chamber (20).

    WAFER SUPPORT APPARATUS
    7.
    发明授权
    WAFER SUPPORT APPARATUS 失效
    晶片夹持设备

    公开(公告)号：EP0963459B1

    公开(公告)日：2002-07-17

    申请号：EP98903702.3

    申请日：1998-01-23

    Applicant: ASM America, Inc.

    Inventor： FOSTER, Derrick, W. ,  VYNE, Robert, M. ,  WENGERT, John, F. ,  VAN DER JEUGD, Cornelius, A. ,  JACOBS, Loren, R. ,  VAN BILSEN, Frank, B., M. ,  GOODMAN, Matthew ,  HARTMANN, Glenn ,  LAYTON, Jason, M. ,  HALPIN, Michael, W. ,  HAWKINS, Mark, R.

    IPC: C23C16/44 ,  C23C16/48 ,  H01L21/00

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a segmented susceptor (602) having top and bottom sections and gas flow passages therethrough. A plurality of spacers or a spacer (615) projecting from a recess (604) formed in the top section (608) of the susceptor support a wafer (648) in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section (618) of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

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